%0 Journal Article
%T Single Color Centers Implanted in Diamond Nanostructures
%A Birgit J. M. Hausmann
%A Thomas M. Babinec
%A Jennifer T. Choy
%A Jonathan S. Hodges
%A Sungkun Hong
%A Irfan Bulu
%A A. Yacoby
%A M. D. Lukin
%A Marko Lon£¿ar
%J Physics
%D 2010
%I arXiv
%R 10.1088/1367-2630/13/4/045004
%X The development of materials processing techniques for optical diamond nanostructures containing a single color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (~20nm) to generate Nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal. Individual NV centers are then isolated mechanically by dry etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (>10%) of the devices contain a single NV center. The second device demonstrates 'deep' (~1\mu m) implantation of individual NV centers into pre-fabricated diamond nanowire. The high single photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allows us to sustain strong photon anti-bunching even at high pump powers.
%U http://arxiv.org/abs/1009.4224v1