%0 Journal Article
%T Room temperature ballistic transport in InSb quantum well nanodevices
%A A. M. Gilbertson
%A A. Kormanyos
%A P. D. Buckle
%A M. Fearn
%A T. Ashley
%A C. J. Lambert
%A S. A. Solin
%A L. F. Cohen
%J Physics
%D 2011
%I arXiv
%R 10.1063/1.3668107
%X We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
%U http://arxiv.org/abs/1111.4806v1