%0 Journal Article
%T Lifetime enhanced transport in silicon due to spin and valley blockade
%A G. P. Lansbergen
%A R. Rahman
%A J. Verduijn
%A G. C. Tettamanzi
%A N. Collaert
%A S. Biesemans
%A G. Klimeck
%A L. C. L. Hollenberg
%A S. Rogge
%J Physics
%D 2010
%I arXiv
%R 10.1103/PhysRevLett.107.136602
%X We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices.
%U http://arxiv.org/abs/1008.1381v3