%0 Journal Article
%T Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO$_3$ interface by electric field
%A H. Nakamura
%A H. Tomita
%A H. Akimoto
%A R. Matsumura
%A I. H. Inoue
%A T. Hasegawa
%A K. Kono
%A Y. Tokura
%A H. Takagi
%J Physics
%D 2008
%I arXiv
%R 10.1143/JPSJ.78.083713
%X Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.
%U http://arxiv.org/abs/0809.4774v1