%0 Journal Article
%T THz Oscillations in a GaN Based Planar Nano-Device
%A K. Y. Xu
%A Y. N. Wang
%A Z. N. Wang
%A J. W. Xiong
%A G. Wang
%J Journal of Computer and Communications
%P 50-53
%@ 2327-5227
%D 2013
%I Scientific Research Publishing
%R 10.4236/jcc.2013.17012
%X <p class=\"MsoNormal\">
	<span lang=\"EN-US\">Gunn oscillations in a GaN based
planar nano-device</span><span lang=\"EN-US\"> have been studied by ensemble Monte
Carlo (EMC) method. Si</span><span lang=\"EN-US\">mulation results show that when the
channel length of the device reduces to 450 nm, THz oscillations (about 0.3</span><span lang=\"EN-US\"> </span><span lang=\"EN-US\">THz) can be obtained. Also the phase of the oscillations can be
controlled by the initial conditions that excite the Gunn do</span><span lang=\"EN-US\">mains. Moreover, through adjusting the phase difference between the
oscillations in a double-channels device, which attained by parallel connecting
two single-channel devices, the frequency of the device
shifts from 0.3 THz to 0.6 THz. This phenomenon remains in devices with shorter
channel-length, unless the channel-length is too short to support Gunn
oscillations. The possible underlying mechanisms are also discussed</span><span lang=\"EN-US\">.</span><span lang=\"EN-US\"><o:p></o:p></span>
</p>
%K THz Oscillation
%K Gunn
%K Monte Carlo
%K GaN
%K Planar Nanodevice
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=40285