%0 Journal Article %T ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior %A Satoshi Yamauchi %A Yoh Imai %J Crystal Structure Theory and Applications %P 100-105 %@ 2169-2505 %D 2013 %I Scientific Research Publishing %R 10.4236/csta.2013.23014 %X

Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340ˇăC using Ti2O3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.

%K ZnO %K Ti2O3 %K Plasma-Assisted Epitaxy %K Photoluminescence %K Free-Exciton %K Bound-Exciton %U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=37250