%0 Journal Article
%T Temporal Evolution of Anodization Current of Porous Silicon Samples
%A Adriana Guti¨¦rrez
%A Jairo Giraldo
%A Mario Enrique Rodr¨ªguez-Garc¨ªa
%J Materials Sciences and Applications
%P 43-47
%@ 2153-1188
%D 2013
%I Scientific Research Publishing
%R 10.4236/msa.2013.48A005
%X <p align=\"justify\">
	<span style=\"font-family:Verdana;\">Temporal evolution of the anodization current of porous silicon samples was studied by means of a model of resistances connected in series that represent</span><span style=\"font-family:Verdana;\">ed</span><span><span style=\"font-family:Verdana;\"> the temporal changes of the substrate and of the interface between the substrate and the electrolyte during the porous sample formation process. The porous samples were obtained by means of photoelectrochemical etching of (100) </span><i><span style=\"font-family:Verdana;\">n</span></i><span style=\"font-family:Verdana;\">-type silicon wafers with different resistivity values, all in the range of 1 - 25 </span></span><span style=\"font-family:Verdana;\"><span style=\"font-family:Verdana;\">W</span></span><span style=\"font-family:Verdana;\">cm. The samples were formed at room temperature in an electrolytic bath composed by a mixture of hydrofluoric acid (48%) and ethanol having a composition ratio of 1:1 in volume under potentiostatic condition (10</span><span> </span><span style=\"font-family:Verdana;\">V and 20</span><span> </span><span style=\"font-family:Verdana;\">V) and an etching time of 2 minutes using back illumination provided by a laser beam with a wavelength of 808 nm</span><span style=\"font-family:Verdana;\">.</span><span></span> 
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%K Porous Silicon
%K Electrochemical Etching
%K Anodization Current
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=35818