%0 Journal Article
%T A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon
%A B.P. Modi
%J Journal of Nano- and Electronic Physics
%D 2011
%I Sumy State University
%X The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier height ¦µbe increases and ideality factor decreases from 0.26 eV and 6.36 at 120 K to 0.70 eV and 1.91 at 360 K respectively. The variation of effective Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneties at the metal-semiconductor interface. We have also discussed whether or not the junction current has been connected themionic field emission (TFE) mechanisms.
%K Schottky barrier height
%K Metal-semiconductor interface
%K Current-voltage characteristics
%K Thermionic emission
%K Ideality factor
%K Lateral inhomogeneties in SBH.
%U http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_680-683.pdf