%0 Journal Article
%T InGaAs/GaAs HEMT for High Frequency Applications
%A N V Uma Reddy
%A Dr M V Chaitanya Kumar
%J International Journal of Soft Computing & Engineering
%D 2013
%I International Journal of Soft Computing & Engineering
%X In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep source-drain implants are proposed for the design. The device simulations have demonstrated its utility towards high frequency applications in GHz range.
%K HEMT
%U http://www.ijsce.org/attachments/File/v3i1/A1277033113.pdf