%0 Journal Article
%T Tuning Semiconductor Laser Diode Lasing Frequency and Narrowing the Laser Linewidth Using External Oscillating Driving Field
%A H.S. Ashour
%J Journal of Applied Sciences
%D 2006
%I Asian Network for Scientific Information
%X In this study, we propose a new method to tune the semiconductor laser lasing frequency and reducing the laser linewidth using an external deriving field. We redeveloped Floquet S-matrix which determines the transmission probabilities and the shape and position of the induced quasibound state, which accumulated incident electrons. We explored the S-matrix numerically for various system parameters. We found that the oscillating field amplitude V1 plays a curial rule in defining the profile of electrons accumulations in the quasibound state and the field`s strength made sift the position of the quasibound state. This sift in the bound state energy due field`s strength is used to tune the lasing frequency and the output of the semiconductor laser linewidth is improved by changing the field`s amplitude the deriving field. By narrowing down the electron accumulations profile the laser linewidth would be narrower.
%K Laser
%K tunable
%K semiconductor laser
%K laser linewidth
%U http://docsdrive.com/pdfs/ansinet/jas/2006/2209-2216.pdf