%0 Journal Article
%T Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
%A Z. Biolek
%A D. Biolek
%A V. Biolkova
%J Radioengineering
%D 2013
%I Spolecnost pro radioelektronicke inzenyrstvi
%X The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.
%K Memory element
%K memristor
%K pinched hysteresis loop
%U www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdf