%0 Journal Article
%T Circuit design with Independent Double Gate Transistors
%A M. Weis
%A R. Emling
%A D. Schmitt-Landsiedel
%J Advances in Radio Science : Kleinheubacher Berichte
%D 2009
%I Copernicus Publications
%X Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. A new adder circuit is proposed, where the power could be reduced by one fifth and the area by on third compared to a tied gate configuration.
%U http://www.adv-radio-sci.net/7/231/2009/ars-7-231-2009.pdf