%0 Journal Article %T Behaviour of RHEED Oscillation during LTGaAs Growth %A ¨¢kos Nemcsics %J Acta Polytechnica Hungarica %D 2007 %I ?buda University %X The behaviour of decay constant of RHEED oscillation during MBE growth onGaAs (001) surface at low temperature growth conditions is studied in this work. Thedependence of decay constant on As-to-Ga ratio, substrate temperature and the excess ofAs content in the layer are examined here. %K MBE %K RHEED %K LT-GaAs %U http://uni-obuda.hu/journal/Nemcsics_10.pdf