%0 Journal Article
%T Photodiode based on GaP sensitized to short-wave region of UV spectrum
%A Dobrovol¡¯skii Yu. G.
%J Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
%D 2012
%I Politehperiodika
%X An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+¡ªn-GaP¡ªSnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structure can reach 0,1¡ª0,12 A/W.
%K photodiode
%K gallium phosphide
%K computer design
%K sensitivity
%U http://www.tkea.com.ua/tkea/2012/5_2012/pdf/07.zip