%0 Journal Article %T Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon %A Liao Yan-Ping %A Shao Xi-Bin %A Gao Feng-Li %A Luo Wen-Sheng %A Wu Yuan %A Fu Guo-Zhu %A Jing Hai %A Ma Kai %A
廖燕平 %A 邵喜斌 %A 郜峰利 %A 骆文生 %A 吴 渊 %A 付国柱 %A 荆 海 %A 马 凯 %J 中国物理 B %D 2006 %I %X Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi$_{2})$ assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi$_{2}$ precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi$_{2}$ precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi$_{2}$ precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved. %K polycrystalline silicon %K excimer laser crystallization %K Ni-disilicide %K Ni-metal-induced lateral crystallization %K two-interface grain growth
多晶硅 %K 受激准分子激光器结晶 %K 结晶化 %K 界面晶粒生长 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=D05DD36CCF042E928A31A61DA033E1F2&yid=37904DC365DD7266&vid=23CCDDCD68FFCC2F&iid=B31275AF3241DB2D&sid=BBED0819A2A875B8&eid=E97B7F8EBE42C30F&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=17