%0 Journal Article
%T Substrate Current and Hot-Carrier-Injection in High Voltage Asymmetrical n-Channel MOS Transistor Technology<br>高压单边器件的衬底电流再次升高和相关的热载流子注入效应
%A Dai Mingzhi
%A Liu Shaohu
%A Arthur Cheng
%A Li Hong
%A Andrew Yap
%A Wang Jun
%A Jiang Liu
%A Liao Kuanyang
%A <br>戴明志
%A 刘韶华
%A 程波
%A 李虹
%A 叶景良
%A 王俊
%A 江柳
%A 廖宽仰
%J 半导体学报
%D 2008
%I 
%X The incorporation of high voltage transistors into the advanced VLSI chips has been limited by the reliability of the manufactured integrated circuits.As a monitor of hot-carrier-injection reliability,the substrate current(ISUB)usually increases in high voltage transistors,but has only one peak in standard low voltage transistors.Correspondingly,the mechanisms of the hot-carrier-injection effect in high voltage N-channel transistors should also be investigated.Based on the Poisson's equation,and simulation ...
%K substrate current
%K two-high-field-region model
%K substrate current equation
%K hot-carrier-injection<br>衬底电流
%K 双强电场模型
%K 衬底电流公式
%K 热载流子注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=018EB986570E83D503E3AE16B1705518&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=A8E9231F98774741&eid=231F9A307C169827&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14