%0 Journal Article
%T Investigation of the polysilicon p--i--n diode and diode string as a process compatible and portable ESD protection device<br>多晶PIN二极管及二极管串作良好工艺兼容并可移植ESD保护器件的研究
%A Jiang Yibo
%A Du Huan
%A Han Zhengsheng
%A <br>姜一波
%A 杜寰
%A 韩郑生
%J 半导体学报
%D 2012
%I 
%X The polysilicon p-i-n diode displayed noticeable process-compatibility and portability in advance technologies as ESD protection device. The paper presented reverse breakdown, current leakage and capacitance characteristics for the fabricated polysilicon p-i-n diode. To evaluate ESD robustness forward and reverse TLP I-V characteristics were measured also. Besides polysilicon p-i-n diode string was investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. To explain the effects of device parameter, analysis and discussion about the inherent properties of polysilicon p-i-n diode were processed finally.
%K Polysilicon p-i-n diode
%K ESD(Electro-Static Discharge)
%K polysilicon p-i-n diode string<br>多晶PIN二极管，静电保护，多晶PIN二极管串
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6054DFDC987AA8B2E8138A75527E47D2&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=DF92D298D3FF1E6E&sid=E9A6A720319368D9&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7