%0 Journal Article
%T C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with ＞40% Power-Added Efficiency<br>C波段3.5W/mm, PAE＞40%的InGaP/GaAs HBT功率管
%A Shen Huajun
%A Chen Yanhu
%A Yan Beiping
%A Ge Ji
%A Wang Xiantai
%A Liu Xinyu
%A and Wu Dexin
%A <br>申华军
%A 陈延湖
%A 严北平
%A 葛霁
%A 王显泰
%A 刘新宇
%A 吴德馨
%J 半导体学报
%D 2006
%I 
%X A C-band InGaP/GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning,emitter ballasting,and an electric plated air bridge.The measured BVCBO is greater than 31V and the BVCEO is greater than 21V.At a frequency of 5.4GHz,the saturated CW output power of the fabricated HBT power transistor is more than 1.4W with a maximum power density of 3.5W/mm,and the power added efficiency is greater than 40%.
%K InGaP/GaAs
%K power
%K heterojunction bipolar transistor<br>InGaP/GaAs
%K 异质结双极晶体管
%K 功率管
%K 波段
%K InGaP
%K GaAs
%K 功率附加效率
%K Transistors
%K Power
%K 功率密度
%K 饱和输出功率
%K 连续波
%K 击穿电压
%K 工艺技术
%K 空气桥
%K 电镀
%K 镇流
%K 发射极
%K 自对准
%K 金属
%K 器件结构
%K 材料结构
%K 异质结双极晶体管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F93F1ED90443D678&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=9CF7A0430CBB2DFD&sid=2E3D2E3C7A6F11A2&eid=633354CC2908E635&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7