%0 Journal Article %T Design on an ESD Protection Circuit with GG-NMOS Structure in CMOS Technology
CMOS工艺中GG-NMOS结构ESD保护电路设计 %A Du Ming %A Hao Yue %A Zhu Zhiwei %A
杜鸣 %A 郝跃 %A 朱志炜 %J 半导体学报 %D 2005 %I %X An ESD protection circuit which uses a GG-NMOS structure is presented.The operating principle and test results are depicted.An improved project,gate-couple technology,on the circuit is presented,and the anticipated effect is achieved.The ability of the circuit achieves class 2 of the human-body model.It is also indicated that ESD induces damage of the gate oxide with microcosmic mechanisms,where ESD occurs based on simulation. %K ESD %K GG-NMOS %K human-body model %K gate-couple
ESD %K GG-NMOS %K 人体放电模式 %K 栅耦合 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E0EBDDF8AD81C023&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=5D311CA918CA9A03&sid=266729317CF80522&eid=498BA6789EF40614&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9