%0 Journal Article
%T An Analytical Charge Control Model of Double Planar Doped HEMTs<br>双异质结双平面掺杂HEMT器件的电荷控制模型
%A Chen Zhen
%A Liu Xinyu
%A Wu Dexin
%A <br>陈震
%A 刘新宇
%A 吴德馨
%J 半导体学报
%D 2004
%I 
%X By using linear E f n s approximation,a new analytical charge control model of the double heterojunction double planar doped high electron mobility transistor (HEMT) is deduced based on Poisson's equation.The heterojunction band theories,the relations among the doping concentration,the distance from the gate to the top planar doped plane and the pinchoff voltage,and the 2DEG density of the device are calculated and analyzed.The model provides a valuable tool for the optimization and performance prediction of the double planar doped HEMT.
%K HEMT
%K charge control model
%K heterojunction
%K 2DEG
%K double planar dope<br>高电子迁移率晶体管(HEMT)
%K 电荷控制模型
%K 异质结
%K 二维电子气
%K 双平面掺杂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F526530A26E5B215&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=DF92D298D3FF1E6E&sid=BC60A9A1D91963F5&eid=F7B726EE3ACCF328&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7