%0 Journal Article
%T Solution of Process Antenna Effect in Deep-Submicron Design<br>深亚微米设计中天线效应的消除
%A Yang Xu
%A Huang Lingyi
%A Ye Qing
%A Zhou Yumei
%A <br>杨旭
%A 黄令仪
%A 叶青
%A 周玉梅
%J 半导体学报
%D 2004
%I 
%X PAE (process antenna effect) is a phenomenon of plasma induced gate oxide degradation.It directly affects manufacturability of VLSI circuits,especially in deep submicron technology using high density plasma processes.Base on analysis of PAE,several estimating algorithms and solutions are provided.And these methods are adopted in the Godson-I CPU's back-end design successfully.
%K PAE
%K plasma
%K gate oxide
%K reliability<br>PAE效应
%K 等离子
%K 栅氧化层
%K 可靠性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AB09D4B8A7D9A22B&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=DF92D298D3FF1E6E&sid=D698D0190A84C2BD&eid=899CC9158FC43EF4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=5