%0 Journal Article
%T Optical transition of the charged excitons in InAs single quantum dots<br>电场调谐InAs量子点荷电激子光学跃迁
%A Li Wen-Sheng
%A Sun Bao-Quan
%A <br>李文生
%A 孙宝权
%J 物理学报
%D 2013
%I 
%X Quantum dot (QD) samples studied in the experiment are grown by molecular-beam epitaxy on semi-insulating GaAs substrates. The photoluminescences (PLs) of the excitons in a single QD are measured at 5 K. The PL spectra of the excitons, biexcitons and charged excitons are identified by measuring and analyzing both PL peaks of the circular and linear polarization and power-dependent PL properties. The charged exciton emissions can be tuned by applying a bias voltage, i.e., negatively charged excitons are changed into positively charged excitons by changing the voltage from 1.0 to -1.0 V. It is shown that the electron-spin will slowly relax compared with that of the hole when they relax from wetting layer into the QD.
%K InAs quantum dot
%K excitons
%K photoluminescence spectrum
%K electric tuning<br>InAs量子点
%K 激子
%K 荧光光谱
%K 电场调谐
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=530695581BF8578401F7553EFE1DD246&yid=FF7AA908D58E97FA&iid=E158A972A605785F&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0