oalib

Publish in OALib Journal

ISSN: 2333-9721

APC: Only $99

Submit

Any time

2019 ( 544 )

2018 ( 16041 )

2017 ( 16568 )

2016 ( 18958 )

Custom range...

Search Results: 1 - 10 of 346778 matches for " two-interface grain growth<br>多晶硅 "
All listed articles are free for downloading (OA Articles)
Page 1 /346778
Display every page Item
Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon
Liao Yan-Ping,Shao Xi-Bin,Gao Feng-Li,Luo Wen-Sheng,Wu Yuan,Fu Guo-Zhu,Jing Hai,Ma Kai,
廖燕平
,邵喜斌,郜峰利,骆文生,吴 渊,付国柱,荆 海,马 凯

中国物理 B , 2006,
Abstract: Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi$_{2})$ assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi$_{2}$ precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi$_{2}$ precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi$_{2}$ precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.
多晶硅薄膜电学输运理论的研究进展
Research progress on carrier transport theory of polycrystalline silicon thin films

邓幼俊,艾斌
DENG Youjun
,AI Bin

- , 2017,
Abstract: 多晶硅薄膜已广泛应用于平板显示、微机电系统和集成电路等领域,在太阳电池和平板系统领域也有着巨大的应用前景。由于多晶硅薄膜存在晶界,晶界内的晶体缺陷和悬挂键会向带隙中引入界面态,界面态一方面会束缚载流子并形成势垒阻碍载流子的传输,另一方面会作为有效复合中心加重载流子的复合,因此,多晶硅薄膜上制备的器件的性能要低于与之对应的单晶硅薄膜器件的性能。为了从理论上阐明暗场和光照条件下多晶硅薄膜的电学性质,人们已发展了各种理论模型。此外,为了确定晶界界面态在带隙中的分布,人们已发展出分析法和计算机模拟两种方法。本文将简要概述人们在多晶硅薄膜电学输运理论和晶界界面态分布确定方法等方面的主要研究进展,以期对从事多晶硅薄膜或多晶半导体输运性质研究的科研工作者有所参考和启发
Control of grain size during low-temperature growth of polycrystalline silicon films
多晶硅薄膜低温生长中晶粒大小的控制

黄 锐,林璇英,余云鹏,林揆训,姚若河,黄文勇,魏俊红,王照奎,余楚迎
物理学报 , 2004,
Abstract: 以SiCl4 H2 为气源 ,用等离子体增强化学气相沉积 (PECVD)方法低温快速沉积多晶硅薄膜 .实验发现 ,在多晶硅薄膜的生长过程中 ,气相空间各种活性基团的相对浓度是影响晶粒大小的重要因素 ,随功率、H2 SiCl4 流量比的减小和反应室气压的增加 ,晶粒增大 .而各种活性基团的相对浓度依赖于PECVD工艺参数 ,通过工艺参数的改变 ,分析生长过程中空间各种活性基团相对浓度的变化 ,指出“气相结晶”过程是晶粒长大的一个重要因素
Raman Spectra Studies of the Microstructure of Oxygen-Doped Polysilicon
用Raman光谱研究掺氧多晶硅的微结构

Wang Yunzhen/Dept of Electronic Science,Technology East China Normal University,ShanghaiPan Yaoling/Dept of Electronic Science,Technology East China Normal University,Shanghai,
王云珍
,潘尧令

半导体学报 , 1989,
Abstract: 本文用Raman谱特征和Raman峰强度的变化,揭示掺氧多晶硅(SIPOS)的微结构:对于各种氧含量(从8%到38%)的SIPOS生长膜是一种无序结构,其中元素Si呈无定形相.高温(T>900℃)热退火后,薄膜经历了一个再结晶过程,并出现了微晶区,Si微晶尺寸随退火温度的提高而增大.膜中氧浓度增加对微晶生长有抑制作用,故膜中氧含量增加将使Si晶粒度减小,或者相应的使薄膜再结晶的温度提高.
Investigation on the Cross-Section Profile of Double Layer Polysilicon Structure in VLSI
VLSI中双层多晶硅结构的剖面研究

Xu Qiuxia/Research,Devclopment Center of Microelectronics,Academia Sinica,BeijingFeng Shumin/Research,Devclopment Center of Microelectronics,Academia Sinica,BeijingZhou Suojing/Research,Devclopment Center of Microelectronics,Academia Sinica,Beijing,
徐秋霞
,冯淑敏,周锁京

半导体学报 , 1989,
Abstract: 本文对VLSI中双层多晶硅结构的剖面及用于结构成形的干法腐蚀技术进行了研究,获得了优化的剖面结构.研究分析表明,多晶硅Ⅰ的侧墙越倾斜,则双层多晶硅结构越佳.改变刻蚀条件可以有效地调节横向对纵向的刻蚀速率比δ,满意地获得多晶硅Ⅰ侧墙倾角α为49°左右;多晶硅Ⅱ采用二步刻蚀工艺.结果既消除了3μm工艺中用各向异性的RIE刻蚀易出现的多晶硅Ⅱ沿多晶硅Ⅰ侧墙的残留造成的相邻字线短路现象,又保证了线宽的精确控制,对下层SiO_2只有轻微的侵蚀.为VLSI制造提供了适用的工艺结构设计和加工技术,成功地研制出了64K DRAM合格样品.
Fabrication of Polycrystalline Silicon Films with Columnar Grains Structure on Quartz
石英衬底上柱状多晶硅薄膜的制备

ZHANG Li-Wei,ZHOU Ling-Li,LI Rui,LI Hong-Ju,LU Jing-Xiao,
张丽伟
,周伶俐,李瑞,李红菊,卢景霄

无机材料学报 , 2008,
Abstract: 利用射频等离子体增强化学气相沉积法(RF-PECVD)在已经预沉积有非晶硅薄膜的石英衬底上低温沉积了N/I非晶硅薄膜,对样品进行了两步快速光热(RTP)退火.采用Raman、X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等测试仪器对样品退火前后的结晶状况和微观形貌进行了分析.结果表明,该N/I非晶硅薄膜退火后的晶化率达到了94%左右,断面形貌为柱状结构,样品中的平均晶粒尺寸约30nm,晶粒团簇的尺寸最大约1.5um.
CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS
多晶硅薄膜低温生长中的表面反应控制

HE DE-YAN,
贺德衍

物理学报 , 2001,
Abstract: 报道用SiF4和H2的间接微波等离子体化学气相沉积方法低温生长多晶硅(poly-Si)薄膜.实验发现,等离子体中的离子、荷电集团对薄膜生长表面的轰击是影响薄膜结晶质量的重要因素之一.通过外加偏压抑制这些荷电粒子的动能是控制表面生长反应、制备高质量ploy-Si薄膜的有效方法.在合适的外加偏压下制备的poly-Si薄膜,氢含量仅约为0.9at%,中心位于520cm-1的Raman特征峰半高宽约为4.4cm-1.
Resistivity Instability in Polysilicon Resistors Under Metal Interco-nnects and Its Suppression by Compensating Ion Implantation
集成电路中金属连线下多晶硅电阻的不稳定性分析及抑制方法(英文)

YU Ning-mei,GAO Yong,CHEN Zhi-ming,
余宁梅
,高勇,陈治明

半导体学报 , 2001,
Abstract: 作为集成电路的电阻单元 ,掺硼的多晶硅电阻在千欧级的范围内存在阻值不稳定性 ,尤其在金属连线下更为严重 .分析了不同工艺条件下制作的多晶硅电阻电特性和晶格特性 .结果表明 ,阻值的不稳定性主要由载流子迁移率改变引起 .通过测试和运用 Seto’ s模型计算进一步发现 ,在铝连线底下势垒高度和俘获的电荷密度均有降低 .电荷的俘获 /反俘获在多晶硅晶粒边界发生引起势垒高度的变化 ,从而导致阻值不稳定 .然后 ,借助于补偿的离子注入制作了高稳定的、阻值在千欧级的多晶硅电阻 .该方法使得多晶硅晶粒边界电荷的俘获 /反俘获对氢退火不敏感 .
The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture
用SiCl4/H2气源沉积多晶硅薄膜光照稳定性的研究

Zhu Zu-Song,Lin Xuan-Ying,Yu Yun-Peng,Lin Kui-Xun,Qiu Gui-Ming,Huang Rui,Yu Chu-Ying,
祝祖送
,林璇英,余云鹏,林揆训,邱桂明,黄 锐,余楚迎

物理学报 , 2005,
Abstract: We have studied the stability of amorphous silicon and polycrystalline silicon films under illumination. These films are prepared by plasma-enhanced chemical vapor deposition technology from SiH4/H2 and SiCl4/H2 separately. The exp eriment indicates that the light-soaking degradation phenomenon, which exists in almost all amorphous silicon films, does not appear in the polycrystalline sili con films. The light-dark conductivity of polycrystalline silicon films does not decrease but increase during light irradiation. Furthermore, the variance of co nductivity depends on hydrogen dilution ratio. It is suggested that the persiste nt photoconductivity effect of polycrystalline silicon films may originate from the high crystallinity and the action of chlorine.
Fabrication of a 125mm Poly-Si TFT Active-Matrix Driving Color AMOLED
125mm彩色AMOLED的多晶硅TFT基板

Meng Zhiguo,Kwok Hoising,Wu Chuny,Wong Man,Xiong Shaozhen,
孟志国
,郭海成,吴春亚,王文,熊绍珍

半导体学报 , 2006,
Abstract: Disk-like large grain poly-si is formed using solution-based MIC (metal-induced crystallization).A Ni gettering treatment technique is adopted to improve the poly-Si material quality.Using this poly-Si material as the active layer,the leakage and uniformity characteristics of TFTs are improved.Additionally,the pixel circuit and their layout of the two TFTs are demonstrated.Adopting a 6-mask process similar to that of the normal a-si TFT AMLCD product line,125mm QVGA poly-si TFT active matrix panels for OLED are fabricated.A 125mm QVGA AMOLED panel,which can display color video image,is implemented using the active matrix panel.
Page 1 /346778
Display every page Item


Home
Copyright © 2008-2017 Open Access Library. All rights reserved.