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Search Results: 1 - 10 of 282203 matches for " resistive frequency<br>RTD "
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Comparison and Analysis of Two Microwave Equivalent-Circuit Models for Resonant Tunneling Diode

Zhong Ming,Zhang Shilin,Guo Weilian,LIANG Huilai,Mao Luhong,

半导体学报 , 2004,
Abstract: The distinction between two microwave equivalent-circuit models,quasi Esaki tunneling model (QETM) and quantum well injection transit model (QWITM),for the resonant tunneling diode (RTD) is discussed in details,and two groups of circuit parameters are extracted from experiment data by the least square fit method.Both theory analysis and the comparison of fit results demonstrate that QWITM is much more precise than QETM.In addition,the rationality of QWITM circuit's parameters confirms it too.On this basis,the resistive frequency is calculated,whose influence factors and improvement method are simply discussed as well.
Frequency Characteristics and Analysis of Quantum Resonant Tunneling Diodes

Zhang Shilin,Niu Pingjuan,Liang Huilai,Guo Weilian,Zhao Zhenbo,Hao Jingchen,Wang Wenjun,Zhou Junming,Huang Qi,

半导体学报 , 2002,
Abstract: Using a HP8510C network analyzer, S parameter of AlAs/InGaAs/AlAs resonant tunneling diodes (RTD) is measured.Through extracting the equivalent circuit parameters from curve fit,the resistive cut off frequency of the fabricated device is calculated(dc to 54GHz) and the factors of affecting frequency are analyzed.
Design of a Frequency Divider with Reduced Complexity Based on a Resonant Tunneling Diode

Du Rui,Dai Yang,Yang Fuhua,

半导体学报 , 2008,
Abstract: A novel edge-triggered D-flip-flop based on a resonant tunneling diode (RTD) is proposed and used to construct a binary frequency divider.The design is discussed in detail and the performance of the circuit is verified using SPICE.Relying on the nonlinear characteristics of RTD,we reduced the number of components used in our DFF circuit to only half of that required using conventional CMOS SCFL technology.
Fabrication of a High-Performance RTD on InP Substrate

Qi Haitao,Feng Zhen,Li Yali,Zhang Xiongwen,Shang Yaohui,Guo Weilian,

半导体学报 , 2007,
Abstract: InGaAs/AlAs RTD material structure on InP substrate is designed and grown by molecular beam epitaxy.A device with good negative differential resistance characteristics and a higher resistive cutoff frequency is fabricated using mesa isolation,metal lift-off,wet chemical etch,and air bridge technologies.The forward bias peak-to-valley current ratio (PVCR) and reverse bias PVCR are about 17.5 and 28,respectively.The peak current density is 56kA/cm2,and the data fitting resistive cutoff frequency using an RNC circuit model is 82.8GHz.The experiment lays a foundation for the design and fabrication of high-performance RTD and monolithic integration circuits of RTD and other high speed and high frequency three terminal devices.
Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure

Liang Huilai,Guo Weilian,Song Ruiliang,Qi Haitao,Zhang Shilin,Hu Liuchang,Li Jianheng,Mao Luhong,Shang Yuehui,Feng Zhen,Tian Guoping,Li Yali,

半导体学报 , 2007,
Abstract: 对RTD/HEMT串联型共振隧穿三极管进行了设计和研制.测量结果表明:最大电流峰谷比为17.6∶1,棚压对峰值电压调控能力在1.5~7.7范围内,-3dB截止频率为4GHz,此种器件可与HEMT在结构和工艺上兼容,可应用于HEMT高速电路.
A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT

Dai Yang,Huang Yinglong,Liu Wei,Ma Long,Yang Fuhu,Wang Liangchen,Zeng Yiping,Zheng Houzhi,

半导体学报 , 2007,
Abstract: 介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.
Cromatografia gasosa ultrarrápida: uma vis?o geral sobre parametros, instrumenta??o e aplica??es
Sequinel, Rodrigo;Hatanaka, Rafael Rodrigues;Gualtieri, Carlos Eduardo;Flumignan, Danilo Luiz;Oliveira, José Eduardo de;Passaretti Filho, Juliano;
Química Nova , 2010, DOI: 10.1590/S0100-40422010001000036
Abstract: since the introduction of gc there has been an ongoing interest in reducing time of analysis resulting in new terms and definitions such as ultra fast gas chromatography (uf-gc). one of the most used definitions describes uf-gc as a technique that combines the employment of short narrow bore column with very fast temperature programming rates producing chromatographic peaks in the range of 50 ms and allowing separations times in 1-2 min or less. this paper summarizes the analytical approaches, the main parameters involved and the instrumentation towards uf-gc.
A New Method for Measuring Series Resistance of RTDs

Guo Weilian,Song Ruiliang,Wang Wei,Yu Xin,Niu Pingjuan,Mao Luhong,Zhang Shilin,Liang Huilai,

半导体学报 , 2008,
Abstract: According to the relation among peak voltage Vp,series resistance RS,and external resistance Rex,a novel method for measuring the series resistance RS of RTDs is proposed.The experimental result demonstrates that this method is accurate,simple,convenient,and quick.The derivation of the relation among Vp,RS,and Rex,the principle of RS measurement,the measured result of RS,and a comparison between this method and other measurement methods are illustrated in detail.
- , 2018, DOI: 10.3785/j.issn.1008-9497.2018.06.014
Abstract: 共振隧穿二极管(RTD)作为一种较成熟的量子器件,具有独特的负内阻特性,由RTD组成的单双稳态转换逻辑单元(MOBILE)能够很好地利用该特性进行数字电路设计.基于MOBILE,设计了一种新的RTD输出控制电路.该电路的优点是将RTD的正向和反向电流电压特性相结合,无须使用面积较大的三端器件,电路设计较便捷.采用RTD输出控制电路和HEMT器件,设计了一种新的D锁存器.该D锁存器采用高电平偏置电压,不仅可使MOBILE获得需要的高电平触发方式,而且电路具有自锁特性.HSPICE仿真实验证明,该D锁存器不仅电路结构简单,而且功耗低、速度快.
Abstract:The resonant tunneling diode (RTD) as a relatively mature quantum device, has a unique characteristic of negative differential resistance. Naturally, the monostable-bistable transition logic element (MOBILE) composed of RTDs can make good use of this characteristic for digital circuit design. This paper presents a new RTD control-output method with MOBILE. The advantage of this method is that the forward and reverse current voltage characteristics of RTD are combined, therefore, the three-terminal devices with large area could be avoided and the circuit design becomes convenient. With the RTD control-output method and a HEMT device, a novel D-latch was designed. The D-latch has a high level of bias voltage, which not only enables the high-level trigger mode of the MOBILE, but also possesses the characteristic of self-locking. The HSPICE simulation and analysis show that the D-latch has low-power consumption and fast-working speed, meanwhile it has a very simple circuit structure.
Design of JK Flip-Flop Based on MOBILE

Shen Jizhong,Lin Mi,Wang Lin,

半导体学报 , 2004,
Abstract: A novel quantum logic element called MOBILE (monostable-bistable transition logic element) and its functional theory are introduced,and a synchronous set-reset edge-trigged JK flip-flop based on MOBILE is designed.The JK flip-flop has stronger function than D flip-flop does,and also riches the types of flip-flops in quantum circuits.
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