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Search Results: 1 - 10 of 71490 matches for " YANG Kai-Mao "
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Effects of light regimes on photosynthetic characteristics and antioxidant system in seedlings of two alder species
不同光强对两种桤木幼苗光合特性和抗氧化系统的影响

LIU Shi-Liang,MA Ming-Dong,PAN Yuan-Zhi,WEI Liu-Li,HE Cheng-Xiang,YANG Kai-Mao,
刘柿良
,马明东,潘远智,魏刘利,何成相,杨开茂

植物生态学报 , 2012,
Abstract: Aims Our objective was to investigate the effects of different light intensities on leaf morphology, photosynthetic capacity, heat dissipation and antioxidant enzyme activities in seedlings of Alnus formosana and A. cremastogyne from a hilly region near Lingyan Mountain in northwestern Sichuan Province in China. We also discuss photosynthetic acclimation and photoprotection strategies in seedlings of the two species Methods Three light regimes of 100%, 56.2% and 12.5% of natural light were simulated to match forest openings, forest gaps and forest canopies, respectively. After more than three months, we measured the parameters of gas exchange, including maximum net photosynthetic rate (Pmax), light saturation point (LSP), light compensation point (LCP), net photosynthetic rate (Pn), stomatal conductance (Gs), transpiration rate (Tr), intercellular CO2 concentration (Ci), fluorescent non-photochemical quenching (NPQ), maximum efficiency of PSII photochemistry (Fv/Fm) and light use efficiency (LUE), using a LI-6400 in seedling leaves. We also determined pigment contents per unit leaf area, lamina mass per unit area (LMA) and activity of antioxidant enzymes (superoxide dismutase, catalase and ascorbate peroxidase). Important findings LMA, carotenoid content (Cars), ratio of carotenoid to total chlorophyll (Car/Chl) and activities of superoxide dismutase, catalase and ascorbate peroxidase in leaves increased with the increase of light intensities. Pmax, LSP, LCP and NPQ tended to increase, while the chlorophyll content (Chl) and LUE decreased. However, the Ci decreased with the increase of Pn, Gs and stomatal limitation value (Ls). We speculated that non-stomatal limitation was the main factor that inhibited Pn. Seedlings of the two alder species could acclimate to different light regimes in this study through changing of physiological and morphological traits. Under all light regimes, diurnal photoinhibition of photosynthesis, as judged by Fv/Fm, was significantly more severe in A. cremastogyne than in A. formosana. The acclimation capacity to high light regime was stronger in A. formosana than in A. cremastogyne. With the increase of light intensities, Pmax and antioxidant enzyme activities increased significantly, but not NPQ in A. formosana. The opposite trends occurred in A. cremastogyne. At the same light intensity, thermal dissipation was much lower, but Pmax was much higher in A. formosana than in A. cremastogyne. These results indicated that A. formosana seedlings might adapt resistance to photoinhibition through improving the use of solar energy by higher Pmax and antioxidant enzyme system, while A. cremastogyne seedling avoided photoinhibition mainly through converting excess light energy to heat energy in the form of non-radiative dissipation through the antenna system.
THE INTERACTION OF Au AND THE Si/SiO2 INTERFACE DEFECT Hit(0.494)

LIU HONG-FEI,CHEN KAI-MAO,YUAN MIN-HUA,WU LAN-QING,

中国物理 B , 1993,
Abstract: The defects at the Si/SiO2 interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO2 interface defect,Hit(0.494), results in the formation of a new interface de-fect, Au-Hit(0.445). Just like the interface defect, Hit(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO2 interface.
A METHOD FOR MEASURING CARRIER CAPTURE CROSS SECTIONS OF DEEP CENTERS WITH ELIMINATING THE INFLUENCE OF INHOMOGENEOUS CARRIER DISTRIBUTION
消除载流子分布的不均匀性的影响准确测量深中心俘获载流子的截面

CHEN KAI-MAO,QIN GUO-GANG,WANG ZHONG-AN,JIN SI-XUAN,
陈开茅
,秦国刚,王忠安,金泗轩

物理学报 , 1984,
Abstract: Zylbersztejn had pointed out that the in homogeneous distribution of carriers in the edge region of the space charge region exerts a disadvantageous influence on the measurement of carrier capture cross sections of deep centers and suggested a method to eliminate this effect. However, his method can only be used to measure carrier capture cross sections at low temperature for quite deep levels. We suggest a new method to remove the harmful impact of inhomogeneous distribution of carriers (including both the inhomogeneous distribution of the carriers in. the edge region and that due to nonuniform shallow donors and acceptors) on the basis of an analysis of the dynamic process of capacitance transient. This method is not subjeer to the serious restriction of the temperature range of measurement and the situation of the levels under measuring. This is important for the study of the temperature dependence of carrier capture cross sections and the tudy of the carrier capture dynamices. As an example. the method has been used to measure the electron capture cross section of gold acceptor in silicon. The results show that the accuracy of measurement is improved.
A METHOD FOR DETERMINING IF TWO OR MORE DEEP LEVELS BELONG TO THE SAME CENTER
判别两个或两个以上深能级是否属于同一中心的方法

CHEN KAI-MAO,JIN SI-XUAN,WU LAN-QING,TAN XUE-QING,
陈开茅
,金泗轩,武蓝青,谭雪清

物理学报 , 1989,
Abstract: In this paper two kinds of photocapacitance transientes, corresponding respectively to two cases of coupling and uncoupling of two or more deep levels have been studied in detail. According to the great difference of the two kinds of the photocapacitance transientes, a method of determining if two or more deep levels belong to the same center has been suggested. It has some advantages that it can be used to measure the sample including more than two deep levels, the processes are quite simple, and it takes short time to finish a measurement. For example, this method has been used to judge the donor and acceptor levels related to gold in Si. The result has proved that they belong to the same center related to gold in Si.
DEEP LEVELS IN Si-IMPLANTED SEMI-INSULATOR GALLIUM ARSENIDE
注硅半绝缘GaAs的深能级

QIU SU-JUAN,CHEN KAI-MAO,WU LAN-QING,
邱素娟
,陈开茅,武兰青

物理学报 , 1993,
Abstract: The deep centers in Si-implanted LEC semi-insulator gallium arsenide have been carefully studied using the deep level transient spectroscopy (DLTS) technique. The results are as follows. The four majority carrier traps,E01 ,E02,E03 and E04 have been observed in the active regions of the Si-implanted LEC semi-insulator gallium arsenide after high temperature an-nealling, and their electron apparent activation energies are 0.298, 0.341, 0. 555 and 0. 821 eV respectively. The E04 trap is related to the EL2. The activation energy of the electron capture cross section of E04 is 0. 119 eV Three minority carrier (hole) traps have been newly found in the same active regions. The hole apparent activation energy of the H03 trap is 0. 713 eV and its concentration is about 2. 8×1016cm-3.
PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATION
少子陷阱特性和铍硅共注半绝缘GaAs空穴陷阱

Chen Kai-mao,Jin Si-xuan,Qiu Su-juan,
陈开茅
,金泗轩,邱素娟

物理学报 , 1994,
Abstract: 用深能级瞬态谱(DLTS)技术测量了高温退火的Be和Si共注入的LEC半绝缘GaAs(无掺杂)。在多子脉冲作用下的Al/Be-Si共注LECSIGaAs肖特基势垒中,观测到E01(0.298),E02(0.341),E03(0.555)和E04(0.821)等四个电子陷阱以及两个主要的少子(空穴)陷阱H'03(0.54)和H″03(0.57)。两少子陷阱的DLTS信号具有若干特点,比如它们的DLTS·峰难于通过增宽脉冲达到最大高度;以及峰的高度强烈地依赖于温度等。这些现象可以用少子陷阱的少子俘获和热发射理论进行合理地解释。鉴于用DLTS技术测量这种陷阱的困难,我们用恒温电容瞬态技术测定它们的空穴表观激活能分别为0.54和0.57eV。它们是新观测到的和Be-Si共注SIGaAs有关缺陷。
INTERFACE STATES AND DEEP CENTERS IN Au-DOPED MOS STRUCTURES
在p型硅MOS结构Si/SiO2界面区中与金有关的界面态和深能级

CHEN KAI-MAO,JIN SI-XUAN,WU LAN-QING,ZENG SHU-RONG,LIU HONG-FEI,
陈开茅
,金泗轩,武兰青,曾树荣,刘鸿飞

物理学报 , 1993,
Abstract: 用深能级瞬态谱(DLTS)技术详细研究了金在p型<111>晶向硅MOS结构Si/SiO2界面区中的行为。结果表明,金与Si/SiO2界面缺陷Hit(0.494)相互作用形成新的缺陷Au-Hit(0.445),和金在硅的禁带中产生一个能量分布很广的连续界面态,利用这些界面态可以合理地解释金使硅MOS结构平带电压向正方向移动的物理机制。结果还表明,在Si/SiO2界面附近的半导体中,金施主中心的剖面分
DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTURE
p型硅MOS结构Si/SiO2界面及其附近的深能级与界面态

CHEN KAI-MAO,WU LAN-QING,PENG QING-ZHI,LIU HONG-FEI,
陈开茅
,武兰青,彭清智,刘鸿飞

物理学报 , 1992,
Abstract: The deep level in both Si/SiO2 interface and its neighbourhood and Si/SiO2 interface states have been studied systematically with Deep Level Transient Spectroscopy (DLTS). Experimental results show that a dominant deep level, H (0.494), exits in both Si/SiO2 interface and its neighborhood in MOS structure formed by thermal oxidation. The deep level possesses some interesting properties, for example, its DLTS peak height depends strongly on temperature, and when the gate voltage reduces the interval between. Fermi-level and Si valence band to a value less than that between the deep level and Si valence band, its sharp DLTS peak is still observable. The hole capture cross section of the interface states at Si/SiO2 interface has been found to depend on temperature, measured with a new method. The energy distribution of the interface states measured with DLTS contradicts to the distribution obtained by quasistatic C-V technique. A new physical model of Si/SiO2 interface was proposed, with this model the above stated experimental results can be successfully expounded.
ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES
n+-Si与p-Si衬底上含纳米硅的SiO2膜电致发光

ZHANG YA-XIONG,LI AN-PING,CHEN KAI-MAO,ZHANG BO-RUI,SUN YUN-XI,QIN GUO-GANG,MA ZHEN-CHANG,ZONG WAN-HUA,
张亚雄
,李安平,陈开茅,张伯蕊,孙允希,秦国刚,马振昌,宗婉华

物理学报 , 1997,
Abstract: The structures of Au/Si-rich SiO2/p-Si and Au/Si-rich SiO2/n+-Si have been fabricated and their electroluminescence characteristics have comparatively been studied. For the Au/Si-rich SiO2/p-Si structure, when the forward bias is more than 4V, red light is emitted, while under the reverse bias, no light is observed. For Au/Si-rich SiO2/n+-Si structure, it does not emit light under the forward bias, but it emits red light when the reverse bias is greater than 3.5V. The mechanism for electroluminescence from the Au/Si-rich SiO2/n+-Si structure is disscussed.
Electrical Properties of Solid C70/GaAs Heterojunctions
C_(70)/GaAs异质结的电学性质

CHEN Kai-mao,SUN Wen-hong,WU Ke,WU Lan-qing,ZHOU Xi-huang,GU Zhen-nan,LIU Hong-fei,
陈开茅
,孙文红,吴克,武兰青,周锡煌,顾镇南,刘鸿飞

半导体学报 , 2001,
Abstract: 在高真空系统中 ,将 C70 膜淀积在 n-和 p- Ga As(10 0 )衬底上 ,制成 C70 / n- Ga As和 C70 / p- Ga As两种接触 ,并对它们的电学性质作了研究 .结果发现两种接触均为强整流结 ,在偏压为± 1V时 ,C70 / n- Ga As和 C70 / p- Ga As接触的整流比分别大于 10 6 和 10 4,并且它们的理想因子都接近于 1.当正向偏压固定时 ,它们的电流均是温度倒数的指数函数 ,从中确定两种异质结的有效势垒高度分别为 0 .784和 0 .5 31e V .用深能级瞬态谱 (DL TS)在 C70 / Ga As界面上观察到电子陷阱 E(0 .6 40 e V )和空穴陷阱 H3(0 .82 2 e V) ,以及用电容 -时间 (C- t)
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