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Search Results: 1 - 10 of 104211 matches for " ShengRui Zhang "
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JIANG Shengrui,ZHANG Hongtu,

金属学报 , 1983,
Abstract: The expression of the elastic field round the outside of the disk inclusion has been deduced analytically by the method of the harmonic and biharmonic potentials. The formulation of the stress intensity factors of the disk inclusions in terms of its eign-strains is resulted. The aspects of the results obtsined as well as its availability have also been discussed.
Purification and Characterization of a CkTLP Protein from Cynanchum komarovii Seeds that Confers Antifungal Activity
Qinghua Wang,Fuguang Li,Xue Zhang,Yongan Zhang,Yuxia Hou,Shengrui Zhang,Zhixia Wu
PLOS ONE , 2012, DOI: 10.1371/journal.pone.0016930
Abstract: Cynanchum komarovii Al Iljinski is a desert plant that has been used as analgesic, anthelminthic and antidiarrheal, but also as a herbal medicine to treat cholecystitis in people. We have found that the protein extractions from C. komarovii seeds have strong antifungal activity. There is strong interest to develop protein medication and antifungal pesticides from C. komarovii for pharmacological or other uses.
Surface pollen assemblages of human-disturbed vegetation and their relationship with vegetation and climate in Northeast China
ManYue Li,YueCong Li,QingHai Xu,RuiMing Pang,Wei Ding,ShengRui Zhang,ZhiGuo He
Chinese Science Bulletin , 2012, DOI: 10.1007/s11434-011-4853-9
Abstract: Comparison of pollen assemblages in different areas of northern China showed that pollen concentrations reflect the intensities of human impact to some degree. For example, pollen concentrations decrease as human impacts increase in intensity. The cereal pollen proportions in farmland differed by area. In Northeast China, cereal pollen proportions were distinctly higher than in most other areas of northern China, suggesting differences in planting habits and climate.
Resear ch on Road Network Accessibility Based on Time Impedance Function

ZHANG Shengrui,WANG Chaoshen,XU Jingcui,

地理科学进展 , 2008,
Abstract: The paper elaborates the accessibility concept and application scope in the different disciplines simply,analyzes the factors influencing accessibility,summarizes quantification method used commonly at the present stage in geometry topology,points out application conditions and insufficiency of the gravity model,the distance model,the accumulation opportunity method.In this foundation,discovers that quantification limiting to the spatial criterion can not respond the relation of the spatial network accurately,in view of this question,proposes the quantification model basing on the time impedance function,which takes the main variable by the practice capacity.This model can respond the spatial demand intensity indirectly.Then the paper introduces the node importance concept,it can reflect factors influencing accessibility in the road network even more directly,such as society,economy,transportation.This model can make up for the insufficiency of space and time method.

JIANG Shengrui,

金属学报 , 1986,
A Novel Double RESURF TG-LDMOS Device Structure

Xu Shengrui,Hao Yue,Feng Hui,Li Dechang,Zhang Jincheng,

半导体学报 , 2007,
Abstract: We describe a new lateral double diffused trench gate MOSFET with double RESURF technology for the first time.We simulate the breakdown voltage and capacitance,especially the influences of double RESURF technology on the breakdown voltage.Compared with conventional TG-LDMOS,the breakdown voltage of the new structure is improved by 30V with the same length of the drift region and on-state resistance,and the structure shows excellent RF characteristics.
Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition

Xu Shengrui,Zhou Xiaowei,Hao Yue,Mao Wei,Zhang Jincheng,Zhang Zhongfen,Bai Lin,Zhang Jinfeng,Li Zhiming,

半导体学报 , 2009,
Abstract: Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.
Distribution of total,exchangeable and fixed nitrogen in the sediments from shallow lakes in the middle and lower reaches of the Yangtze River

WANG Shengrui,

环境科学学报 , 2008,
Abstract: 研究了长江中下游浅水湖泊沉积物总氮、可交换态氮与固定态铵的赋存特征结果表明:①14个沉积物的总氮(TN)含量为768.5~5190 6 mg·kg-1之间,以月湖沉积物TN含量最高,是其它各湖泊沉积物TN含量的2~7倍;可交换态氮(EN)含量为150.92~341.98mg·kg-1,占TN的6.29%~19.64%;固定态铵(F-NH4)含量变化在186 5~462.5mg·kg-1,占TN的8.40%~35.02%.②EN以NH 4-N为主,NO-3-N其次,NO-2-N最低,分别占EN的74.61%~85.85%、13.93%~25.15%和0.17%~0.27%.③EN、NH 4-N、NO-3-N及NO-2-N之间在α=0.01时互为显著正相关,F-NH4与EN、NH 4-N在α=0.05时显著正相关,而与NO-3-N、NO-2-N不相关.④在α=0.01或α=0.05时,EN、NH 4-N、NO-3-N、NO-2-N和F-NH4分别与总氮(TN)、总磷(TP)、有机碳(TOC)、阳离子代换量(CEC)、粉沙粒(Silt)及粘粒(Clay)含量有显著正相关关系,与粗砂粒(Sand)含量有显著负相关关系.除此之外,F-NH4与CaO、Fe2O3和Al2O3均有显著正相关关系.
Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire
MOCVD生长的[ 1-102]r面蓝宝石衬底上的[11-20 ]a面GaN表面形貌研究

Xu Shengrui,Hao Yue,Duan Huantao,Zhang Jincheng,Zhang Jinfeng,Zhou Xiaowei,Li Zhiming,Ni Jinyu,

半导体学报 , 2009,
Abstract: Nonpolara-plane 11-20] GaN has been grown onr-plane 1-102] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to thec-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used fora-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth onr-plane sapphire, and with this technique, the crystal quality has been greatly improved.
Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating

Li Zhiming,Xu Shengrui,Zhang Jincheng,Chang Yongming,Ni Jingyu,Zhou Xiaowei,Hao Yue,

半导体学报 , 2009,
Abstract: The temperature ?eld in the vertical metalorganic chemical vapor deposition (MOCVD) reactor chamber used for the growth of GaN materials is studied using the ?nite element analysis method (FEM). The effects of the relative position between the coils and the middle section of the susceptor, the radius of the coil, and the height of the susceptor on heating condition are analyzed. All simulation results indicate that the highest heating efficiency can be obtained under the conditions that the coil distributes symmetrically in the middle section of the susceptor and the ratio of the height of the susceptor to that of the coil is three-quarters. Furthermore, the heating efficiency is inversely proportional to the radius of the coil.
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