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In this work, studied electrical conductivity(s) and
annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV
and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of
complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.
Analysis of the elastic scattering of protons from 12C nuclei had been performed within the framework of both the optical model and single folding model at different proton energies; 17, 30.3, 40, 49.48 and 61.4 MeV. We have obtained the global potential parameters which could fairly reproduce the experimental data for p+12C elastic scattering at the aforementioned energies. The radial and energy dependence of the real and imaginary parts of the potential were calculated. Good agreement between experimental data and theoretical predictions in the whole angular range was obtained using both phenomenological approach (Optical Model), and semi-microscopic approach (Single Folding). In single folding calculations, the real part of the potential was calculated from a more fundamental basis by the folding method in which the NN interaction VNN(r), is folded into the density of the target nuclei and supplemented with a phenomenological imaginary potential. The obtained normalization factor Nr is in the range of 0.75 - 0.9.