oalib

Publish in OALib Journal

ISSN: 2333-9721

APC: Only $99

Submit

Any time

2020 ( 18 )

2019 ( 198 )

2018 ( 1208 )

2017 ( 1072 )

Custom range...

Search Results: 1 - 10 of 78274 matches for " Peiyi CHEN "
All listed articles are free for downloading (OA Articles)
Page 1 /78274
Display every page Item
Influence of the Level of Financial Development on OFDI in China  [PDF]
Peiyi Chen
American Journal of Industrial and Business Management (AJIBM) , 2018, DOI: 10.4236/ajibm.2018.82020
Abstract: Outward Foreign Direct Investment (OFDI) is influenced by many factors. In these factors, the impact of the financial development of the investing country is very important and obvious. An important support for an enterprise to make OFDI is to get a sufficient source of funding, and the source of funding depends on the degree of development of domestic financial market. From the early research, we can find that OFDI in developing countries, at least to some extent, is the result of economic structural improvements and financial innovations. Taking China as an example, this paper studies the role of developing countries in the level of financial development in OFDI. By using the panel data of 30 provinces and autonomous regions in China during the five-year period from 2010 to 2014, we want to examine the development of financial markets in various regions impact on China’s outward foreign direct investment.
High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System
Guangli LUO,Xiaofeng Lin,Peiyi CHEN,Peixin TSIAN,

材料科学技术学报 , 2000,
Abstract: An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550 degrees C. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.
Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling
Deng Ning,Pan Liyang,Liu Zhihong,Zhu Jun,Chen Peiyi,Peng Li,
Deng Ning
,Pan Liyang,Liu Zhihong,Zhu Jun,Chen Peiyi,Peng Li

半导体学报 , 2006,
Abstract: A novel flash memory cell with stacked structure (Si substrate/SiGe quantum dots/tunneling oxide/poly-Si floating gate) is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing.Simulation results indicate the new structure provides high speed and reliability.Experimental results show that the operation voltage can be as much as 4V less than that of conventional full F-N tunneling NAND memory cells.Memory cells with the proposed structure can achieve higher speed,lower voltage,and higher reliability.
Strained Si-Channel Heterojunction n-MOSFET
应变Si沟道异质结NMOS晶体管(英文)

Shi Jin,HUANG Wentao,CHEN Peiyi,
史进
,黄文涛,陈培毅

半导体学报 , 2002,
Abstract: The process parameters are adjusted and the process procedure is simplified on the basis of precursor's work and the strained Si channel SiGe n MOSFET is fabricated successfully.This n MOSFET takes the strained Si layer(which is deposited on the relaxed SiGe buffer layer) as current channel and can provide a 48 5% improvement in electron mobility while keeping the gate voltage as 1V.
Electrical Performance of Electron Irradiated SiGe HBT and Si BJT
Wentao HUANG,Jilin WANG,Zhinong LIU,Peiyi CHEN,Peihsin TSIEN,Xiangti MENG,
Peihsin
,TSIEN

材料科学技术学报 , 2004,
Abstract: The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gainβ decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well asβ decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation ofβ for both SiGeHBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.
Changes in specialized blood vessels in lymph nodes and their role in cancer metastasis
Lee Ser Yee,Chao-Nan Qian,Seng Ooi Aik,Peiyi Chen
Journal of Translational Medicine , 2012, DOI: 10.1186/1479-5876-10-206
Abstract: Background High endothelial venules (HEV) have been recognized to play a role in metastasis by its changes seen in the cancer microenvironment of lymph nodes (LN) and solid cancers. Squamous cell carcinoma (SCC) of the tongue is a prevalent tumor of the head and neck region with high propensity for LN metastasis. The extent of LN metastasis is the most reliable adverse prognostic factor. Primary tumors can induce vasculature reorganization within sentinel LN before the arrival of tumor cells and HEV represents these remodelled vessels. This study aims to evaluate the cancer induced vascular changes in regional lymph nodes (LN) of patients by studying the morphological and functional alterations of HEV and its correlation with clinical outcome and pathological features. Methods This study was based on 65 patients with SCC tongue who underwent primary surgical treatment including neck dissection. The patients were categorized into 2 groups based on the presence of malignancy in their cervical lymph nodes. A review of the patients' pathological and clinical data was performed from a prospective database. Immunohistochemical staining of the tissue blocks for HEV and high-power-field image analysis were performed and analyzed with correlation to the patients' clinical and pathological features. Results The total number of HEV was found to be significantly associated to disease-free interval. There was a similar association comparing the HEV parameters to overall survival. The density of abnormal HEV was significantly higher in patients with established metastases in their lymph nodes and HEV was shown to be a better prognosis factor than conventional tumor staging. The HEV morphological metamorphosis demonstrates a spectrum that correlates well with disease progression and clinical outcome. Conclusions The results suggest that the HEV displays a spectrum of morphological changes in the presence of cancer and LN metastasis, and that HEV is possibly involved in the process of cancer metastasis. We revealed the relationship of HEV and their metamorphosis in pre-metastatic and metastatic environments in regional lymph nodes of tongue cancer patients in relation to clinical outcomes. The significant observation of modified dilated HEV containing red blood cells in lymph nodal basin of a cancer suggests the shifting of its function from one primarily of immune response to that of a blood carrying vessel. It also demonstrated potential prognostic value. More studies are needed to elucidate its potential role in cancer immunotherapy and as a potential novel
Simulation study of new 3-terminal devices for high speed STT-RAM
新型三端自旋转移扭矩随机存储器器件的模拟研究

Zhang Shuchao,Hu Jiangfeng,Chen Peiyi,Deng Ning,
张树超
,胡江峰,陈培毅,邓宁

半导体学报 , 2011,
Abstract: To improve the performance of spin transfer torque random access memory (STT-RAM), especially writing speed, we propose three modified 3-terminal STT-RAM cells. A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation. The best switching speed of the new structures is 120% faster than that of the rectangular 3-terminal device. The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.
Growth of Stacked Ge Quantum Dots and Its Optical Characteristics
多层Ge量子点的生长及其光学特性

Deng Ning,Wang Jilin,Huang Wentao,Chen Peiyi,Li Zhijian,
邓宁
,王吉林,黄文韬,陈培毅,李志坚

半导体学报 , 2003,
Abstract: Stacked Ge quantum dots are grown on Si(100) by u ltra-high vacuum chemical vapor deposition(UHV/CVD).The morphology and size distribution of embedded and upper Ge dots are studied by TEM and AFM respectively.The influences of number of layers and thickness of Si spacer on upper Ge dots are investigated as well.An apparent blue shift (87meV) is observed from the PL sp ectrum at 10K.FWHM of Ge dots NP peak is 46meV,which indicates the narrow size d istribution of stacked Ge dots grown by UHV/CVD.
Formation of stacked ruthenium nanocrystals embedded in SiO2 for nonvolatile memory applications
面向非挥发存储器应用的叠层Ru纳米晶材料的制备与特性

Mao Ping,Zhang Zhigang,Pan Liyang,Xu Jun,Chen Peiyi,
毛平
,张志刚,潘立阳,许军,陈培毅

半导体学报 , 2009,
Abstract: 本论文分别利用叠层快速热处理(RTA)和逐层RTA两种方法,在SiO2介质层中制备出了双层金属Ru纳米晶。前一种方法获得纳米晶尺寸和密度分别为2-4nm和3×1012cm-2,而后一种方法为3-7nm和2×1012cm-2.实验结果表明,叠层RTA方法能够获得更高的电荷陷阱面密度和更均匀的纳米晶尺寸和空间分布,从而有效提高了存储器件的电荷存储能力和保持特性。
UHV/CVD n--Type Silicon Epitaxy Used for SiGe HBT Device
用于SiGeHBT器件的UHV/CVDn~-型硅外延研究

Huang Wentao,Chen Changchun,Li Xiyou,Shen Guanhao,Zhang Wei,Liu Zhihong,Chen Peiyi,Tsien Pei-Hsin,
黄文韬
,陈长春,李希有,沈冠豪,张伟,刘志弘,陈培毅,钱佩信

半导体学报 , 2004,
Abstract: 利用超高真空化学气相淀积(UHV/CVD)设备,在掺Asn+型Si衬底上生长了掺Pn-型Si外延层.用扩展电阻法分析了在不同的生长温度和PH3气体流量下生长的Si外延层的过渡区厚度.结果表明,生长温度对n+-Si衬底的As外扩有明显影响,在700℃下生长的Si外延层的过渡区厚度为0.16μm,而在500℃下仅为0.06μm,且杂质分布非常陡峭.X射线双晶衍射分析表明在700℃下生长的Si外延层的质量很高.制作的锗硅异质结晶体管(SiGeHBT)的击穿特性很硬,击穿电压为14.5V,在VCB=14.0V下的漏电流仅为0.3μA;输出特性很好,在VCE=5V,IC=3mA时的放大倍数为60
Page 1 /78274
Display every page Item


Home
Copyright © 2008-2017 Open Access Library. All rights reserved.