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Search Results: 1 - 10 of 9749 matches for " Pablo Stoliar "
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Non-Hebbian Learning Implementation in Light-Controlled Resistive Memory Devices
Mariana Ungureanu, Pablo Stoliar, Roger Llopis, Fèlix Casanova, Luis E. Hueso
PLOS ONE , 2012, DOI: 10.1371/journal.pone.0052042
Abstract: Non-Hebbian learning is often encountered in different bio-organisms. In these processes, the strength of a synapse connecting two neurons is controlled not only by the signals exchanged between the neurons, but also by an additional factor external to the synaptic structure. Here we show the implementation of non-Hebbian learning in a single solid-state resistive memory device. The output of our device is controlled not only by the applied voltages, but also by the illumination conditions under which it operates. We demonstrate that our metal/oxide/semiconductor device learns more efficiently at higher applied voltages but also when light, an external parameter, is present during the information writing steps. Conversely, memory erasing is more efficiently at higher applied voltages and in the dark. Translating neuronal activity into simple solid-state devices could provide a deeper understanding of complex brain processes and give insight into non-binary computing possibilities.
Enhanced and continuous electrostatic carrier doping on the SrTiO$_{3}$ surface
Azar B. Eyvazov,Isao H. Inoue,Pablo Stoliar,Marcelo J. Rozenberg,Christos Panagopoulos
Physics , 2013, DOI: 10.1038/srep01721
Abstract: Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm$^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO$_{3}$. Namely, the formation and continuous evolution of field domains and current filaments.
Resistive switching phenomena in TiOx nanoparticle layers for memory applications
Emanuelle Goren,Mariana Ungureanu,Raul Zazpe,Marcelo Rozenberg,Luis E. Hueso,Pablo Stoliar,Yoed Tsur,Fèlix Casanova
Physics , 2014, DOI: 10.1063/1.4897142
Abstract: Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO_x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.
Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators
Vincent Guiot,Laurent Cario,Etienne Janod,Benoit Corraze,Vinh Ta Phuoc,Marcelo Rozenberg,Pablo Stoliar,Tristan Cren,Dimitri Roditchev
Physics , 2013, DOI: 10.1038/ncomms2735
Abstract: Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V characteristics and the magnitude of the threshold electric field (E$_{th}$) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. E$_{th}$ increases as a power law of the Mott Hubbard gap (E$_g$), in surprising agreement with the universal law E$_{th}$ $\propto$E$_g$$^{2.5}$ reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude longer than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains which grow to form filamentary paths across the sample.
Milestones of Spiritual Evolution in Prehistoric Karelia
Abram D. Stoliar
Folklore : Electronic Journal of Folklore , 2001,
Abstract:
MATHEMATICAL MODEL OF MOTOR AND RAILWAY TRANSPORT INTERACTION AT TERMINALS
T. Stoliar,M. Pitchenko
Аvtomob?lnyi Transport , 2010,
Abstract: The mathematical model of motor and railway transport interaction at the terminal on the basis of Petri networks is developed.
Universal electric-field-driven resistive transition in narrow-gap Mott insulators
Pablo Stoliar,Laurent Cario,Etienne Janod,Benoit Corraze,Catherine Guillot-Deudon,Sabrina Salmon-Bourmand,Vincent Guiot,Julien Tranchant,Marcelo Rozenberg
Physics , 2013, DOI: 10.1002/adma.201301113
Abstract: One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with negligible power dissipation. In this context, one possible route to control the Mott transition is to electrostatically dope the systems using strong dielectrics, in FET-like devices. Another possibility is through resistive switching, that is, to induce the insulator-to-metal transition by strong electric pulsing. This action brings the correlated system far from equilibrium, rendering the exact treatment of the problem a difficult challenge. Here, we show that existing theoretical predictions of the off-equilibrium manybody problem err by orders of magnitudes, when compared to experiments that we performed on three prototypical narrow gap Mott systems V2-xCrxO3, NiS2-xSex and GaTa4Se8, and which also demonstrate a striking universality of this Mott resistive transition (MRT). We then introduce and numerically study a model based on key theoretically known physical features of the Mott phenomenon in the Hubbard model. We find that our model predictions are in very good agreement with the observed universal MRT and with a non-trivial timedelay electric pulsing experiment, which we also report. Our study demonstrates that the MRT can be associated to a dynamically directed avalanche.
Environmental stress upon hepatopancreatic cells of freshwater prawns (Decapoda: Caridea) from the floodplain of Paraná River  [PDF]
Pablo Collins
Natural Science (NS) , 2010, DOI: 10.4236/ns.2010.27094
Abstract: In order to evaluate the influence of stressed environments on hepatopancreatic cells of fre- shwater prawns, Macrobachium borellii Nobili, 1896 and Palaemonetes argentinus Nobili 1901, (Crustacea, Decapoda, Palaemonidae) were collected at three different aquatic environments with different relationship to urban development in Argentina. Furthermore the effects of several cypermethryn concentration on hepa- topancreatic cell of M. borellii and P. argentinus were evaluated in a laboratory assays. The “N° 1” lake (Santa Fe Argentina) which is more affected by the anthropogenic pressure and “Don Felipe” lake which is still not strongly by human activities were the studied sites from the floodplain of Paraná river. While Alejandra lake was the intermedia effects sites. Different damaged ultra-structures were found in F- and R-cells of prawns in the stressed lake. The predominant features were: disrupted the microvillous border, swelled mitochondria, reduction of endoplasmic reticulum, dyctiosomes, glycoproteins, desna-turalization of vacuole membrane and premature autolysis. Moreover the F-cell number was higher in the environment near to city than in the others sites. Similar effects were observed in the cypermethryn assays. The observations clearly indicate that the ultrastructure of midgut gland in the both palaemonids varies depending on the site from which animals are collected and the biocid presence. So, in this case it can be stated that the hepatopancreas histology of fre- shwater prawns is a good tool to monitor the impact of a stressed environment upon freshwater prawns.
Thermal effects and switching kinetics in silver/manganite memristive systems: Probing oxygen vacancies diffusion
P. Stoliar,M. J. Sánchez,G. A. Patterson,P. I. Fierens
Physics , 2014,
Abstract: We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resistance (HR) state under thermal cycling. Experimental results are well reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite- based cells. The confident values obtained for activation energies and diffusion coefficient associated to Ov dynamics, constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces.
Non thermal and purely electronic resistive transition in narrow gap Mott insulators
P. Stoliar,M. Rozenberg,E. Janod,B. Corraze,J. Tranchant,L. Cario
Physics , 2014,
Abstract: Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism.
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