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Search Results: 1 - 10 of 5022 matches for " Ni-disilicide "
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Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon
Liao Yan-Ping,Shao Xi-Bin,Gao Feng-Li,Luo Wen-Sheng,Wu Yuan,Fu Guo-Zhu,Jing Hai,Ma Kai,
廖燕平
,邵喜斌,郜峰利,骆文生,吴 渊,付国柱,荆 海,马 凯

中国物理 B , 2006,
Abstract: Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi$_{2})$ assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi$_{2}$ precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi$_{2}$ precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi$_{2}$ precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.
Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide
金属诱导生长法在Ni硅化物上异质生长多晶GeSi薄膜

Wu Guibin,Ye Zhizhen,Zhao Xing,Liu Guojun,Zhao Binghui,
吴贵斌
,叶志镇,赵星,刘国军,赵炳辉

半导体学报 , 2006,
Abstract: 采用金属Ni诱导与超高真空化学气相沉积相结合的方法,低温下在氧化Si衬底上制备出了多晶GeSi薄膜.利用X射线衍射仪、场发射扫描电镜等对多晶GeSi薄膜的晶体质量、表面形貌进行了表征,研究了在Ni上生长多晶GeSi的生长方式及表面形貌随生长参数变化的规律.结果表明,在温度高于510℃时,Ni金属诱导作用明显;生长压强为10Pa时,多晶GeSi能够形成连续致密的薄膜,而采用先低压(0.1Pa)后高压(10Pa)的生长方式,多晶GeSi呈现分离的晶须状,晶须尺寸多在100nm以上.
Effects of Al additions on Microstructure of Hot Pressed MoSi2
Al对热压MoSi2材料显微结构的影响

LI Jian-Lin,JIANG Dong-Liang,TAN Shou-Hong,
李建林
,江东亮,谭寿洪

无机材料学报 , 1999,
Abstract: The effect of Al additions on the microstructure of hot pressed MoSi2 was studied, and theconcept of t ran s it ion- gas- phase-sintering was proposed. The results indicate t hat t he SiO2 phaseon grain boundary is eliminated by the reaction of Al and SiO2 while the Al2O3 particles areproduced, and the MoSi2 lattice is changed because of the diffusion of Al atoms. Furthermore,the sintering is advanced because of the deformation of MoSi2 lattice and the disappearance ofresidual gas which is replaced by Al vapor in isolated pores, so porosity is reduced. The porosityis the lowest when Al additive is 3.5 wt%.
Microstructure and Mechanism of Pack Siliconizing on Niobium
铌表面固体粉末包埋渗硅研究

LI Ming,SONG Li-Xin,LE Jun,SONG Xue-Ping,GUO Zhan-Cheng,
李明
,宋力昕,乐军,宋学平,郭占成

无机材料学报 , 2005,
Abstract: NbSi2 coating was formed on niobium by halide-activated pack cementation process. The microstructure of the as-formed coating and the possible reactions of Si deposition were investigated. The results indicate that the as-formed coating consists of single phase of NbSi2- SiF2 is responsible for the transportation and deposition of Si in the pack.
Fabrication of GdSi2 Films by Ion-Beam Deposition
离子束淀积方法制备GdSi_2薄膜

Li Yanli,Chen Nuofu,Zhou Jianping,Song Shulin,Yang Shaoyan,Liu Zhikai,
李艳丽
,陈诺夫,周剑平,宋书林,杨少延,刘志凯

半导体学报 , 2004,
Abstract: 采用离子束淀积方法制备了单相Gd Si2 薄膜.用俄歇电子谱仪对样品的成分进行了分析,用X射线衍射方法分析了样品的结构,并用扫描电子显微镜观察了样品的表面形貌.X射线衍射分析发现在4 0 0℃沉积的样品中仅存在正交的Gd Si2 相.样品在氩气氛中35 0℃,30 m in退火处理后,Gd Si2 相衍射峰的半高宽变窄,说明经过退火处理,Gd Si2 的晶体质量变得更好
Progress in the Low Temperature Oxidation of MoSi2
二硅化钼材料低温氧化的研究进展

WANG Gang,ZHAO Shi-Ke,JIANG Wan,
王刚
,赵世柯,江莞

无机材料学报 , 2001,
Abstract: 介绍了二硅化钼低温氧化的研究进展,对当今几种二硅化钼材料低温氧化发生“Pesting”现象的机理模型及改善低温抗氧化的方法进行了评述,在此基础上提出了今后的二硅化钼低温氧化研究的重点和方向。
Characterization of Schottky Barrier Contact Between Ultra Thin Epitaxial CoSi2/n-Si
超薄外延CoSi_2/n-Si的肖特基势垒接触特性

QU Xin,|ping,RU Guo,|ping,XU Bei,|lei,LI Bing,|zong,
屈新萍
,茹国平,徐蓓蕾,李炳宗

半导体学报 , 2000,
Abstract: 研究了超薄(~10nm)CoSi2/Si的肖特基势垒接触特性.Co(3—4nm)/Ti(1nm)双层金属通过快速热退火在Si(100)衬底上形成超薄CoSi2薄膜.X射线衍射测试表明该薄膜具有较好的外延特性.用I-V、C-V方法在82—332K温度范围内测试了CoSi2/Si的肖特基势垒特性.用弹道电子发射显微术直接测量了微区肖特基势垒高度.测试表明,用Co/Ti/Si方法形成的超薄CoSi2/Si接触在室温时具有优良的肖特基势垒特性,I-V方法测得的势垒高度为0.59eV,其理想因子为1.01;在低温时,I-V方法测得的势垒高度随温度降低而降低,理想因子则升高.采用肖特基势垒不均匀性理论,并假设势垒高度呈高斯
Separation of a Signal of Interest from a Seasonal Effect in Geophysical Data: I. El Niño/La Niña Phenomenon  [PDF]
David H. Douglass
International Journal of Geosciences (IJG) , 2011, DOI: 10.4236/ijg.2011.24045
Abstract: Geophysical signals N of interest are often contained in a parent signal G that also contains a seasonal signal X at a known frequency fX. The general issues associated with identifying N and X and their separation from G are considered for the case where G is the Pacific sea surface temperature monthly data, SST3.4; N is the El Niño/La Niña phenomenon and the seasonal signal X is at a frequency of 1/(12 months). It is shown that the commonly used climatology method of subtracting the average seasonal values of SST3.4 to produce the widely used anomaly index Nino3.4 is shown not to remove the seasonal signal. Furthermore, it is shown that the climatology method will always fail. An alternative method is presented in which a 1/fX (= 12 months) moving average filter F is applied to SST3.4 to generate an El Niño/La Niña index NL that does not contain a seasonal signal. Comparison of NL and Nino3.4 shows, among other things, that estimates of the relative magnitudes of El Niños from index NL agree with observations but estimates from index Nino3.4 do not. These results are applicable to other geophysical measurements.
Adsorption of Nickel in Aqueous Solution onto Natural Maghnite  [PDF]
Mohamed Amine Zenasni, Said Benfarhi, André Merlin, Stéphane Molina, Béatrice George, Bahia Meroufel
Materials Sciences and Applications (MSA) , 2013, DOI: 10.4236/msa.2013.42018
Abstract:

Maghnite clay obtained from Tlemcen, Algeria was investigated to remove heavy metal ion from wastewater. Thus, the present study includes the adsorption of Ni(II) in aqueous solution on maghnite clay through the process of adsorption under various conditions (with variable concentration of metal ion, temperature, pH and mixing time). Increasing pH favours the removal of metal ions till they are precipitated as the insoluble hydroxides. The uptake is rapid with maximum adsorption being observed within 10 min for Ni(II). In addition, the results obtained from adsorption isotherm indicated that these data can be better fitted with the Langmuir and Freundlich equations than the Dubinin-Radushke- vich (D-R) equation.

ACTIVIDAD CATALíTICA DE SULFUROS DE NI Y W SOPORTADOS SOBRE ZEOLITA ULTRAESTABLE
CID,RUBY; BENDEZú,SALVADOR; LóPEZ AGUDO,ANTONIO;
Boletín de la Sociedad Chilena de Química , 2002, DOI: 10.4067/S0366-16442002000100004
Abstract: catalytic activity on cyclohexene hydroconversion of ni and w sulfides supported on ultrastable zeoltie was studied. the preparation method ( ion exchange, impregnation, or formation of small nio clusters ) of usy zeolite supported ni, w, and niw sulfide catalysts has a strong influence on the activity and selectivity
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