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Search Results: 1 - 10 of 350429 matches for " J. W. Freeland "
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Local Environment of Ferromagnetically Ordered Mn in Epitaxial InMnAs
P. T. Chiu,B. W. Wessels,D. J. Keavney,J. W. Freeland
Physics , 2004, DOI: 10.1063/1.1855427
Abstract: The magnetic properties of the ferromagnetic semiconductor In0.98Mn0.02As were characterized by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. The Mn exhibits an atomic-like L2,3 absorption spectrum that indicates that the 3d states are highly localized. In addition, a large dichroism at the Mn L2,3 edge was observed from 5-300 K at an applied field of 2T. A calculated spectrum assuming atomic Mn2+ yields the best agreement with the experimental InMnAs spectrum. A comparison of the dichroism spectra of MnAs and InMnAs show clear differences suggesting that the ferromagnetism observed in InMnAs is not due to hexagonal MnAs clusters. The temperature dependence of the dichroism indicates the presence of two ferromagnetic species, one with a transition temperature of 30 K and another with a transition temperature in excess of 300 K. The dichroism spectra are consistent with the assignment of the low temperature species to random substitutional Mn and the high temperature species to Mn near-neighbor pairs.
Local Electronic and Magnetic Studies of an Artificial La2FeCrO6 Double Perovskite
Benjamin Gray,Ho Nyung Lee,Jian Liu,J. Chakhalian,J. W. Freeland
Physics , 2010, DOI: 10.1063/1.3455323
Abstract: Through the utilization of element-resolved polarized x-ray probes, the electronic and magnetic state of an artificial La2FeCrO6 double perovskite were explored. Applying unit-cell level control of thin film growth on SrTiO3 (111), the rock salt double perovskite structure can be created for this system, which does not have an ordered perovskite phase in the bulk. We find that the Fe and Cr are in the proper 3+ valence state, but, contrary to previous studies, the element-resolved magnetic studies find the moments in field are small and show no evidence of a sizable magnetic moment in the remanent state.
Effect of polar discontinuity on the growth of LaNiO3/LaAlO3 superlattices
Jian Liu,M. Kareev,S. Prosandeev,B. Gray,P. Ryan,J. W. Freeland,J. Chakhalian
Physics , 2010, DOI: 10.1063/1.3371690
Abstract: We have conducted a detailed microscopic investigation of [LaNiO3(1 u.c.)/LaAlO3(1 u.c.)]N superlattices grown on (001) SrTiO3 and LaAlO3 to explore the influence of polar mismatch on the resulting electronic and structural properties. Our data demonstrate that the initial growth on the non-polar SrTiO3 surface leads to a rough morphology and unusual 2+ valence of Ni in the first LaNiO3 layer, which is not observed after growth on the polar surface of LaAlO3. A newly devised model suggests that the polar mismatch can be resolved if the perovskite layers grow with an excess of LaO, which also accounts for the observed electronic, chemical, and structural effects.
On Magnetic Interlayer Coupling and Proximity Effect in a La$_{0.67}$Ca$_{0.33}$MnO$_3$(10 nm)/YBa$_2$Cu$_3$O$_7$(10 nm) Superlattice
J. W. Freeland,J. Chakhalian,G. Cristiani,H. -U. Habermeier,B. Keimer
Physics , 2007, DOI: 10.1063/1.2747678
Abstract: We present a study of interlayer coupling and proximity effects in a La$_{0.66}$Ca$_{0.33}$MnO$_3$(10 nm)/YBa$_2$Cu$_3$O$_7$(10 nm) superlattice. Using element-sensitive x-ray probes, the magnetic state of Mn can be probed without seeing the strong diamagnetism of the superconductor, which makes this approach ideal to study changes in the magnetic properties across the superconducting transition. By a combined experiment using {\it in situ} transport measurements during polarized soft x-ray measurements, we were able to see no noticeable influence of the superconducting state on the magnetic properties and no evidence for magnetic coupling across a 10 nm YBCO layer.
Metal-insulator transition and orbital reconstruction in Mott quantum wells of NdNiO$_{3}$
Jian Liu,M. Kareev,D. Meyers,B. Gray,P. Ryan,J. W. Freeland,J. Chakhalian
Physics , 2012, DOI: 10.1103/PhysRevLett.109.107402
Abstract: The metal-insulator transition (MIT) and the underlying electronic and orbital structure in $e_{g}^{1}$ quantum wells based on NdNiO$_{3}$ was investigated by d.c. transport and resonant soft x-ray absorption spectroscopy. By comparing quantum wells of the same dimension but with two different confinement structures, we explicitly demonstrate that the quantum well boundary condition of correlated electrons is critical to selecting the many-body ground state. In particular, the long-range orderings and the MIT are found to be strongly enhanced under quantum confinement by sandwiching NdNiO$_{3}$ with the wide-gap dielectric LaAlO$_{3}$, while they are suppressed when one of the interfaces is replaced by a surface (interface with vacuum). Resonant spectroscopy reveals that the reduced charge fluctuations in the sandwich structure are supported by the enhanced propensity to charge ordering due to the suppressed $e_g$ orbital splitting when interfaced with the confining LaAlO$_{3}$ layer.
Extraction of domain-specific magnetization reversal for nanofabricated periodic arrays using soft x-ray resonant magnetic scattering
D. R. Lee,J. W. Freeland,G. Srajer,S. K. Sinha,V. Metlushko,B. Ilic
Physics , 2003,
Abstract: A simple scheme to extract the magnetization reversals of characteristic magnetic domains on nanofabricated periodic arrays from soft x-ray resonant magnetic scattering (SXRMS) data is presented. The SXRMS peak intensities from a permalloy square ring array were measured with field cycling using circularly polarized soft x-rays at the Ni L$_3$ absorption edge. Various SXRMS hysteresis loops observed at different diffraction orders enabled the determination of the magnetization reversal of each magnetic domain using a simple linear algebra. The extracted domain-specific hysteresis loops reveal that the magnetization of the domain parallel to the field is strongly pinned, while that of the perpendicular domain rotates continuously.
Domain-specific magnetization reversals on a permalloy square ring array
D. R. Lee,J. W. Freeland,G. Srajer,V. Metlushko,Chun-Yeol You
Physics , 2003, DOI: 10.1063/1.1668611
Abstract: We present domain-specific magnetization reversals extracted from soft x-ray resonant magnetic scattering measurement on a permalloy square ring array. The extracted domain-specific hysteresis loops reveal that the magnetization of the domain parallel to the field is strongly pinned, while those of other domains rotate continuously. In comparison with the micromagnetic simulation, the hysteresis loop on the pinned domain indicates a possibility of the coexistence of the square rings with the vortex and onion states.
Emergent properties hidden in plane view: Strong electronic correlations at oxide interfaces
Jak Chakhalian,John W. Freeland,Andrew J. Millis,Christos Panagopoulos,James M. Rondinelli
Physics , 2014, DOI: 10.1103/RevModPhys.86.1189
Abstract: Finding new collective electronic states in materials is one of the fundamental goals of condensed matter physics. Atomic-scale superlattices formed from transition metal oxides are a particularly appealing hunting ground for new physics. In bulk form, transition metal oxides exhibit a remarkable range of magnetic, superconducting, and multiferroic phases that are of great scientific interest and are potentially capable of providing innovative energy, security, electronics and medical technology platforms. In superlattices new states may emerge at the interfaces where dissimilar materials meet. Here we illustrate the essential features that make transition metal oxide-based heterostructures an appealing discovery platform for emergent properties with a few selected examples, showing how charge redistributes, magnetism and orbital polarization arises and ferroelectric order emerges from heterostructures comprised of oxide components with nominally contradictory behavior with the aim providing insight into the creation and control of novel behavior at oxide interfaces by suitable mechanical, electrical or optical boundary conditions and excitations.
Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films
Surendra Singh,J. W. Freeland,M. R. Fitzsimmons,H. Jeen,A. Biswas
Physics , 2015,
Abstract: We present a comparison of the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1-xCaxMnO3 films with x = 0.33 and 0.375, across the metal to insulator transition (MIT) temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films near the MIT. The charge-magnetic correlation length (~ 12000 {\AA}) for x = 0.33 was much larger (~4 times) than the charge-charge correlation length (~ 3200 {\AA}) at 20 K. Whereas for x = 0.375 the charge-magnetic correlation length (~ 7500 {\AA}) was smaller than the charge-charge correlation length (~ 9000 {\AA}).
Field-effect diode based on electron-induced Mott transition in NdNiO3
W. L. Lim,E. J. Moon,J. W. Freeland,D. J. Meyers,M. Kareev,J. Chakhalian,S. Urazhdin
Physics , 2012, DOI: 10.1063/1.4757865
Abstract: We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition.
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