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Search Results: 1 - 10 of 1194 matches for " Hiromichi Ohta "
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Enhanced effective mass in doped SrTiO3 and related perovskites
Wilfried Wunderlich,Hiromichi Ohta,Kunihito Koumoto
Physics , 2005, DOI: 10.1016/j.physb.2009.04.012
Abstract: The effective mass is one of the main factors determining the Seebeck coefficient and electronic conductivity. Nb-doping increases the effective mass because of two reasons, lattice constants increase and electronic effects. In this ab-initio study the effective mass is estimated from the curvature of electronic bands and it could be clarified that the deformation of SrTiO3 crystals has a significant influence on bandgap and effective DOS and band mass, which are both in excellent agreement to experimental data. However, the electronic effect due to the e2g- band flattening near the Gamma-point due to Nb-doping up to 0.2 at% is the main factor for the increase of effective mass. Doping of La shows a linear decrease of the effective mass; this is explained by the different surrounding of A- and B-site. Substitution of other elements like Ba on the A-site and V on the B-site in SrTiO3 were also found to increase the effective mass.
Effective mass calculations of SrTiO3-based superlattices for thermoelectric applications lead to new layer design
Wilfried Wunderlich,Hiromichi Ohta,Kunichi Koumoto
Physics , 2008,
Abstract: The effective mass is one of the main factors for enlarging the Seebeck coefficient and electronic conductivity of SrTiO3-based thermoelectric materials [1,2]. The goal of this paper is to clarify, how superlattices can change the effective mass and other features of the bandstructure. The natural Ruddlesden-Popper phase (SrTiO3)n(SrO)m with n=2, m=1 the situation changes, because the TiO6-octahedrons are slightly extended, due to diluted density of the SrO layer. Another effect is the deformed electron density, which leads to reduced effective mass perpendicular to the layer, but enlarged parallel to the plane [3]. The average value of the effective mass over this anisotropy of the 2-dimensional electron gas (2DEG) for pure Ruddlesden-Popper phases is smaller, but can increase beyond the value of pure Pervoskite for certain doping elements. In the same way, artificial superlattices (SrTiO3)x/(SrTi1-z(Nb)zO3)y were examined. When fine nanostructures (n=2, m=3 or n=3, m=2) are present the effective mass increases, when the structure becomes coarser (n=4, m=1) smaller values are determined.
Thermopower analysis of the electronic structure around metal-insulator transition in V1-xWxO2
Takayoshi Katase,Kenji Endo,Hiromichi Ohta
Physics , 2014, DOI: 10.1103/PhysRevB.90.161105
Abstract: Electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x = 0-0.06) grown on alfa-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S|-values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in good linear relation with MI transition temperatures. |S| values of V1-xWxO2 films at T > TS were constant at low values of 23 microV K-1 independently of x, which reflects a metallic electronic structure, whereas, those at T < TS almost linearly decreased with logarithmic W-concentrations. The gradient of -213 microV K-1 agrees well with -kB/e*ln10 (-198 microV K-1), suggesting that V1-xWxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.
Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion
Takayoshi Katase,Kenji Endo,Hiromichi Ohta
Physics , 2015, DOI: 10.1103/PhysRevB.92.035302
Abstract: Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001) alpha-Al2O3, (11-20) alpha-Al2O3, and (001) TiO2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from ~200 to 23 microV K-1, along with a sharp drop in electrical resistivity (rho), due to the transition from an insulator to a metal. The MI transition temperatures observed both in rho (Trho) and S (TS) for the VO2 films systematically decrease with lattice shrinkage in the pseudo-rutile structure along c-axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset TS, where the insulating phase starts to become metallic, is much lower than onset Trho. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in rho-measurements. Consequently, S-measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in VO2.
Thermopower enhancement by fractional layer control in 2D oxide superlattices
Woo Seok Choi,Hiromichi Ohta,Ho Nyung Lee
Physics , 2014, DOI: 10.1002/adma.201401676
Abstract: We have investigated two-dimensional thermoelectric properties in transition metal oxide heterostructures. In particular, we adopted an unprecedented approach to direct tuning of the 2D carrier density using fractionally {\delta}-doped oxide superlattices. By artificially controlling the carrier density in the 2D electron gas that emerges at a LaxSr1-xTiO3 {\delta}-doped layer, we demonstrate that a thermopower as large as 408 {\mu}V K-1 can be reached. This approach also yielded a power factor of the 2D carriers 117 {\mu}Wcm-1K-2, which is one of the largest reported values from transition metal oxide based materials. The promising result can be attributed to the anisotropic band structure in the 2D system, indicating that {\delta}-doped oxide superlattices can be a good candidate for advanced thermoelectrics.
Polaron transport and thermoelectric behavior in La-doped SrTiO3 thin films with elemental vacancies
Woo Seok Choi,Hyang Keun Yoo,Hiromichi Ohta
Physics , 2015, DOI: 10.1002/adfm.201403023
Abstract: Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron formation and thermoelectric properties of the transition metal oxide (TMO) thin films. With decreasing oxygen partial pressure during the film growth (P(O2)), a systematic lattice expansion was observed along with the increased elemental vacancy and carrier density, experimentally determined using optical spectroscopy. Moreover, we observed an absorption in the mid-infrared photon energy range, which is attributed to the polaron formation in the doped SrTiO3 system. Thermopower of the La-doped SrTiO3 thin films could be largely modulated from -120 to -260 {\mu}V K-1, reflecting an enhanced polaronic mass of ~3 < mpolron/m < ~4. The elemental vacancies generated in the TMO films grown at various P(O2) influences the global polaronic transport, which governs the charge transport behavior, including the thermoelectric properties.
A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor
Kosuke Uchida,Akira Yoshikawa,Kunihito Koumoto,Takeharu Kato,Yuichi Ikuhara,Hiromichi Ohta
Physics , 2009, DOI: 10.1063/1.3407568
Abstract: We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility ~0.8 cm^2/Vs. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.
Dimensional crossover of polaron dynamics in Nb:SrTiO3/SrTiO3 superlattices: Possible mechanism of thermopower enhancement
Woo Seok Choi,Hiromichi Ohta,Soon Jae Moon,Yun Sang Lee,Tae Won Noh
Physics , 2009, DOI: 10.1103/PhysRevB.82.024301
Abstract: Using optical spectroscopy, we investigated the electrodynamic properties of Nb:SrTiO3/SrTiO3 superlattices. In these superlattices, a large enhancement of the Seebeck coefficient (S) has been reported with decreasing Nb:SrTiO3 layer thickness [refer to H. Ohta et al., Nature Mater. 6, 129 (2007)]. By analyzing the optical spectra, we found that the polaron plays an important role in determining the electrodynamic properties of the superlattices. With decreasing Nb:SrTiO3 layer thickness from eleven to one unit cell, we observed a threefold enhancement of the polaron effective mass and relaxation time. Such increases were attributed to a dimensional crossover of polaron from 3D to quasi-2D. Moreover, the modified nature of the polaron at low dimensions enhanced the thermoelectric properties of the oxide superlattice, by simultaneously increasing S and preventing the decrease of carrier mobility. Our results indicate that strong electron-phonon coupling can provide an alternative pathway in searching efficient thermoelectric materials.
Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y2O3 and rutile TiO2
Taku Mizuno,Yuki Nagao,Akira Yoshikawa,Kunihito Koumoto,Takeharu Kato,Yuichi Ikuhara,Hiromichi Ohta
Physics , 2011, DOI: 10.1063/1.3633217
Abstract: Electric field modulation analysis of thermopower (S) - carrier concentration (n) relation of a bilayer laminate structure composed of a 1.5-nm thick conducting layer, probably TinO2n-1 (n=2, 3,...) Magn\'eli phase, and rutile TiO2 was performed. The results clearly showed that both the rutile TiO2 and the thin interfacial layer contribute to carrier transport: the rutile TiO2 bulk region (mobility mu~0.03 cm2V-1s-1) and the 1.5-nm thick interfacial layer (mu~0.3 cm2V-1s-1). The effective thickness of the interfacial layer, which was obtained from the S-n relation, was below ~ 3 nm, which agrees well with that of the TEM observation (~1.5 nm), clearly showing that electric field modulation measurement of S-n relation can effectively clarify the carrier transport properties of a bilayer laminate structure.
Electric field modulation of thermopower for transparent amorphous oxide thin film transistors
Hirotaka Koide,Yuki Nagao,Kunihito Koumoto,Yuka Takasaki,Tomonari Umemura,Takeharu Kato,Yuichi Ikuhara,Hiromichi Ohta
Physics , 2010, DOI: 10.1063/1.3512870
Abstract: To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.
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