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Search Results: 1 - 10 of 32555 matches for " HUANG Rongfang "
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Low Temperature Deposition of Titanium Nitride
Lishi WEN,Rongfang,HUANG,

材料科学技术学报 , 1998,
Abstract: Low temperature deposition (LTD) is an actual frontier in materials sicence and engineering, especially for thin film technology In this paper the fundamentals and processing of lew temperature deposition of TiN coating are reviewed. The prerequisites of a law temperature deposition process are enough good densification, hardness and adhesion of the deposited coating. The fundamentals Of low temperature deposition are Structure zone model and nonequilibrium plasma vapor growth in a combined DC and pulsed electromagnetic fields. namely a combination of a DC bias voltage superimposed by a DC pulsed bias voltage with variable frequency and peak voltage height. Low temperature deposition processing can be realized simply with only stationary eledric fields. However, sensitivity of the product quality to the process parameters is the main barrier of this processing in the way to mass production. Low temperature deposition processing using the effects of a combined DC and pulsed electromagnetic fields has attained some promising results for the future commercialization. But they need Still further Systematic and deep study The application of low temperature deposition processing is nOt limited in range of low melting substrate materials. It is also important for internal stress control, defect minimization, microstructure densification and pedermance improvement for coatings on broad spectrum of substrate materials as well as for different types of applications.
Evolution Analysis of Synthetic Biotechnology from the Perspective of Multiple Knowledge Network  [PDF]
Rongfang Liu
American Journal of Industrial and Business Management (AJIBM) , 2019, DOI: 10.4236/ajibm.2019.92025
Abstract: Science and technology that function as knowledge resources have shown a complex relation in the process of innovation, especially in the synthetic biotechnology industry, an industry bridging biology and engineering where its standardized, decoupled and modularized innovation mode has reconstructed rather than simply spanned the institutions of academic and industrial worlds. Multiple knowledge networks open a new avenue for studying the evolution of synthetic biotechnology. This paper first proposes a framework of integrating scientific and technological knowledge networks, then utilizes WOS’s Cross Search function to construct the cross-reference between DII and SCI and SSCI, finally employs the indicators of network structures and nodes to analyze the multiple knowledge networks in the evolution of synthetic biotechnology. Results show that at the emergence stage (2000-2003), scientific and technological knowledge are difficult to integrate with each other; at the exploration stage (2004-2007), there exist significant intersection and symbiosis between scientific and technological knowledge; and at the growth stage (2008-2014), scientific and technological knowledge give rise to independent logics of growth.
Simulations of Temperature Field in HFCVD Diamond Films over Large Area
Aiying WANG,Chao SUN,Rongfang HUANG,Lishi WEN,

材料科学技术学报 , 2003,
Abstract: A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temper-ature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapordeposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filamentsnumber, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filamentsarrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate tem-perature region of 76 mm×76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm×80 mmhot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm×100 mm under thecondition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for speciallyoptimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD.
Priority Sequence of Generic Technologies Commercialization: Take Biotechnology for an Example  [PDF]
Shihui Wang, Rongfang Liu
American Journal of Industrial and Business Management (AJIBM) , 2018, DOI: 10.4236/ajibm.2018.83050
Abstract: With the establishing and improving of generic technologies development system in various countries, the obstacles which block the development of generic technologies have been transferred from basic R & D sessions to the downstream sessions, which refer to industrial applications. The research on integrating priority sequence of generic technologies commercialization in the stage of knowledge diffusion is desiderated. Given the limitation of generic technologies classification perspective based on bottom-up tree structure, using social network analysis method, this paper puts forward a method which identifying industrial generic technologies reversely by observing the sharing of proprietary technology to generic technologies from the top of technology tree, in order to pinpoint generic technologies with market conditions and those still need to be studied, moreover, to provide a scientific evaluation method for government intervention in the diffusion of generic technologies. In order to achieve this research, we take biotechnology as an example to conduct empirical test.
DEPOSITION DIAMOND FILM BY HFCVD WITH SEPARATE INLET OF CH_4 AND H_2
分离送入甲烷和氢气的热丝法沉积金刚石膜

CHEN Guangchao,HUANG Rongfang,WEN Lishi,
陈广超
,黄荣芳,闻立时

材料研究学报 , 1997,
Abstract: HFCVD metliod was employed to deposit diamond film on silicon substrate. The design of in-letting H2 and CH4 separetely was applied, which made the resistanee of tungsten filament dccrease to 20%,compared to that of HFCVD with mixture inletting. Moreover, well-faccted crystal of diamond could be got. The experiment showed that the nux of reaction gas influnced strongly on dense growth zone of dia-mond film.
MICROSTRUCTURE OF SiC WHISKER BREINFORCED Al_2O_3COMPOSITE CERAMIC
SiC晶须-Al_2O_3复合陶瓷显微结构的电镜研究

WEN Lishi,ZHAO Hangwei,HUANG Rongfang,
闻立时
,赵航炜,黄荣芳

材料研究学报 , 1990,
Abstract: The phase composition,whisker microstructure and whisker-matrix inter-face of hot-pressing SiC-Al_2O_3 composite ceramic were studied by XRD,SEM,TEM andHREM.The results show that the whisker in the composite ceramics is 15R SiC and thematrix is triclinic
MACHANISM OF SIZE EFFECT OF ELECTRIC CONDUCTIVITY IN ULTRATHIN METAL FILM
超薄金属膜电阻率尺寸效应

TANG zhaolin,HUANG Rongfang,WEN Lishi,
唐兆磷
,黄荣芳,闻立时

材料研究学报 , 1997,
Abstract: The experimental results showed that the ultrathin Al films possessed decreasing grain size and increasing electric resistivity with decreasing film thickness (size effect). Based on F-S Model, M-S Model and Matthiessen rule, the effect of surface scattering and grain boundary scattering on size effect of electric resistivity was analyzed quantitavely.
Microstructure and In-plane Resistivity of Cu/Ni Multilayers
Wei WANG,Rongfang HUANG,Lishi WEN,Liping GUO,Wenkui WANG,

材料科学技术学报 , 1999,
Abstract: 1.IDtroductiGnInrecellty6ars,interesthasgrowninmodulatedcompositestructurescomposedofperiodicallychang-inglayersoftwodifferentmaterials.Itwasshownthatthematerialsmayacquireimprovedqualitiestothoseofcorrespondingpuremetalswhenthemodu-lationwavelengthisverythinatafewnanometersinthickness.ItiswellknownthattheCu/Nimultilayershavebeenstudiedalotbecauseofitsabnormalphysicalproperties,includingelectricalresistivity1,2],elasticmoduli3],magneticproperties'l.Asthethicknessofanindividuallayerinmulti…
Properties of Reactive Magnetron Sputtered ITO Films without in-situ Substrate Heating and Post-deposition Annealing
MENG Chen,Xuedong BAI,Jun Gong,Chao SUN,Rongfang HUANG,Lishi WEN,

材料科学技术学报 , 2000,
Abstract: Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that ail 110 films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10(-4) R cm and average transmittance of similar to 78% at wavelength of 400 similar to 700 nm have been achieved for the films on polyester at room temperature.
EFFECT OF GRAIN BOUNDARY PRECIPITATES ON IMPACT TOUGHNESS AND NOTCH SENSITIVITY OF Fe-Ni-BASE SUPERALLOY GH135

by GUO Jianting,ZHANG Jinyan,HUANG Rongfang,CHEN Guiyun Institute of Metal Research,Academia Sinica,Shenyang,

金属学报 , 1985,
Abstract:
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