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Search Results: 1 - 10 of 116 matches for " HBT "
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发射极-基极-发射极结构PNP型AlGaAs/GaAsHBT电流增益的理论分析
严北平,张鹤鸣,戴显英
半导体学报 , 2001,
Abstract: 建立了 PNP型异质结双极晶体管基区少数载流子浓度的解析模型 .理论分析了发射极 -基极 -发射极布局的PNP型 HBT的电流增益 .讨论了不同基极电流成分 ,如外基区表面复合电流 ,基极接触处的界面复合电流 ,基区体内复合电流 ,以及刻蚀台面处的台面复合电流对电流增益的影响
Base Transport Model for Ultra-Thin-Base SiGe HBT
超薄基区SiGe HBT电流传输模型

LI Yao,KONG De,|yi,WEI Jing,|he,XU Ju,|yan,
李垚
,孔德义,魏敬和,许居衍

半导体学报 , 2000,
Abstract: According to the exact solution of Boltzmann equation,the characteristics of parameters such as carrier temperature and diffusion coefficient in ultra\|thin base of SiGe HBT are analyzed.And a new model of base transport in SiGe HBT different from traditional one is founded.
X Band MMIC Power Amplifier Based on InGaP/GaAs HBT
基于InGaP/GaAs HBT的X波段MMIC功率放大器研制

Chen Yanhu,Shen Huajun,Wang Xiantai,Ge Ji,Li Bin,Liu Xinyu,Wu Dexin,
陈延湖
,申华军,王显泰,葛荠,李滨,刘新宇,吴德馨

半导体学报 , 2007,
Abstract: An X band InGaP/GaAs HBT single stage MMIC power amplifier is reported.The self-aligning InGaP/GaAs HBT process was used to fabricate the circuit.The PA circuit is biased at the class AB state.The small signal S parameter test shows that at 8~8.5GHz,the linear power gain is 8~9dB,VSWRin<2,and VSWRout<3.After optimizing the collector bias,the linear gain is improved to 9~10dB.Under an 8.5GHz CW signal power test with optimized loading conditions,the P1dB of the circuit is 29.4dBm,relevant power gain is 7.2dB,and relevant PAE is 42%.The Psat of the circuit is 30dBm.
Low Temperature Silicon and Silicon Germanium Doping Epitaxy by HV/CVD
HV/CVD系统Si、SiGe低温掺杂外延

LIU Zhi nong,JIA Hong yong,LUO Guang li,CHEN Pei yi,LIN Hui wang,TSIEN Pei Hsin,
刘志农
,贾宏勇,罗广礼,陈培毅,林惠旺,钱佩信

半导体学报 , 2001,
Abstract: 研究了硼烷 (B2 H6 )掺杂锗硅外延和磷烷 (PH3)掺杂硅外延的外延速率和掺杂浓度与掺杂气体流量的关系 .B浓度与 B2 H6 流量基本上成正比例关系 ;生长了 B浓度直至 10 1 9cm- 3的多层阶梯结构 ,各层掺杂浓度均匀 ,过渡区约 2 0 nm,在整个外延层 ,Ge组分 (x=0 .2 0 )均匀而稳定 .PH3掺杂外延速率随 PH3流量增加而逐渐下降 ;P浓度在 PH3流量约为 1.7sccm时达到了峰值 (约 6× 10 1 8cm- 3) .分别按 PH3流量递增和递减的顺序生长了多层结构用以研究 PH3掺杂 Si外延的特殊性质
Degradation Mechanisms for GaN and GaAs High Speed Transistors
David J. Cheney,Erica A. Douglas,Lu Liu,Chien-Fong Lo,Brent P. Gila,Fan Ren,Stephen J. Pearton
Materials , 2012, DOI: 10.3390/ma5122498
Abstract: We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate), and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.
Obtaining femtoscopy results in models with resonances
Kisiel, Adam;
Brazilian Journal of Physics , 2007, DOI: 10.1590/S0103-97332007000500013
Abstract: we present femtoscopic results from models in which the resonance contribution is taken into account. the therminator program, which implements a single freeze-out model and takes into account propagation and decay of all known resonances, was used. we test methods of determining the femtoscopic size of the system, or the ''hbt radii''. we show that the best one is the two-particle method combined with the exact calculation of the two-pion wave function including the wave-function symmetrization and coulomb effects. we compare it to other methods and comment on their validity and applicability.
Development of Microwave SiGe Heterojunction Bipolar Transistors
JIA Hong,|yong,ZHU Wen,|bin,LIU Zhi,|nong,CHEN Pei,|yi,Peihsin TSIEN,
贾宏勇
,朱文斌,刘志农,陈培毅,钱佩信

半导体学报 , 2000,
Abstract: The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home\|made high vacuum/rapid thermal processing chemical vapor deposition equipment.The HBTs show good performance and industrial use value.The current gain is beyond 100;the breakdown voltage BV ceo is 3.3V,and the cut\|off frequency is 12.5GHz which is measured in packaged form.
GaAs/AlGaAs HBT器件的S_2Cl_2钝化
曹先安,陈溪滢,李喆深,苏润洲,丁训民,侯晓远,钱峰,姚晓峨,陈效建
半导体学报 , 1997,
Abstract: 本文采用了一种新的硫钝化方法处理GaAs/AlGaAs异质结台面型晶体管,大大改善了它的直流特性.并通过对其低温性能的研究和钝化过程的实时观测,证明了S2Cl2溶液能十分有效地改善GaAs的表面性质,从而降低了表面复合对器件性能的影响.这种钝化方法有可能发展成为GaAs器件制造中的一种实用钝化工艺.
不同偏置电压下SiGe HBT Early电压的理论研究
钱伟,金晓军,张炯,林惠旺,陈培毅,钱佩信
半导体学报 , 1998,
Abstract: Early电压VA和直流增益β是双极器件在模拟电路中应用的重要参数,本文研究了在器件不发生大注入效应和雪崩倍增效应的条件下,SiGeHBT中基区Ge含量以及VCE对器件的Early电压VA的影响,并用数值计算的方法得到了在其它参数相同的情况下,器件的Early电压VA随基区中Ge含量和偏置电压VCE的变化规律,表明Early电压VA是随VCE和Ge含量的增加而增加的.这些结果对SiGeHBT在模拟集成电路中的设计和应用提供了指导.
Silicon Germanium Heterojunction Bipolar Transistor for Digital Application
Engelin Shintadewi Julian
TELKOMNIKA : Indonesian Journal of Electrical Engineering , 2012, DOI: 10.11591/telkomnika.v10i3.609
Abstract: Bipolar transistor performances can be characterized by figures of merit such as cutoff frequency, maximum frequency of oscillation and ECL gate delay. We studied the required figures of merit for digital application and the effects of lateral and vertical scaling to the figures of merit of SiGe HBT. With lateral scaling, the width of emitter finger is scaled down from 0.25 to 0.12 ?m while with the vertical scaling, the base width is scaled down to reduce the base delay. We also observed the effects of Ge profile and Ge fraction to the devices performances. Bipole3 5.3.1G is used to help us in the study. We found that high frequency cutoff and maximum frequency of oscillation as well as low ECL gate delay are all important for digital applications. Scaling down the emitter finger width enhanced the maximum frequency of oscillation and reduced ECL gate delay significantly while scaling down the base width increased the cutoff frequency and current gain.
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