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Search Results: 1 - 10 of 13569 matches for " Dashan Fan "
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A bilinear oscillatory integral along parabolas
Dashan Fan,Xiaochun Li
Mathematics , 2007,
Abstract: We establish an $L^\infty\times L^2 \to L^2$ norm estimate for a bilinear oscillatory integral along parabolas incorporating oscillatory factors $e^{i|t|^{-\beta}}$.
On an extension of singular integrals along manifolds of finite type
Abdelnaser Al-Hasan,Dashan Fan
International Journal of Mathematics and Mathematical Sciences , 2006, DOI: 10.1155/ijmms/2006/59830
Abstract: We extend the Lp-boundedness of a class of singular integral operatorsunder the H1 kernel condition on a compact manifold from the homogeneousSobolev space L˙αp(ℝn) to the Lebesgue spaceLp(ℝn).
Riesz Potentials, Riesz Transforms on Lipschitz Spaces in Compact Lie Groups
Daning Chen,Jiecheng Chen,Dashan Fan
IAENG International Journal of Applied Mathematics , 2012,
Abstract:
Cauchy problem for NLKG in modulation spaces with noninteger powers
Huang Qiang,Fan Dashan,Chen Jiecheng
Mathematics , 2014,
Abstract: In this paper, we consider the Cauchy problem for the nonlinear Klein-Gordon equation whose nonlinearity is $|u|^{k}u$ in the modulation space, where $k$ is not an integer. Our method can be applied to other equations whose nonlinear parts have regularity estimates. We also study the global solution with small initial value for the Klein-Gordon-Hartree equation. By this we can show some advantages of modulation spaces both in high and low regularity cases.
Critical exponent for evolution equation in Modulation space
Huang Qiang,Fan Dashan,Chen Jiecheng
Mathematics , 2014,
Abstract: In this paper, we propose a method to find the critical exponent for certain evolution equations in modulation spaces. We define an index $\sigma (s,q)$, and use it to determine the critical exponent of the fractional heat equation as an example. We prove that when $\sigma (s,q)$ is greater than the critical exponent, this equation is locally well posed in the space $C(0,T;M_{p,q}^{s})$; and when $\sigma (s,q)$ is less than the critical exponent, this equation is ill-posed in the space $C(0,T;M_{2,q}^{s})$. Our method may further be applied to some other evolution equations.
Application of orthogonal experimental design and Tikhonov regularization method for the identification of parameters in the casting solidificationp rocess

Dashan SUI,Zhenshan CUI,

金属学报(英文版) , 2009,
Abstract: The inverse heat conduction method is one of methods to identify the casting simu-lation parameters. A new inverse method was presented according to the Tikhonov regularization theory. One appropriate regularized functional was established, and the functional was solved by the sensitivity coefficient and Newton-Raphson iteration method. Moreover, the orthogonal experimental design was used to estimate the ap-propriate initial value and variation domain of each variable to decrease the number of iteration and improve the identification accuracy and efficiency. It illustrated a detailed case of AI SiTMg sand mold casting and the temperature measurement ex- periment was done. The physical properties of sand mold and the interfacial heat transfer coefficient were identified at the meantime. The results indicated that the new regularization method was efficient in overcoming the ill-posedness of the inverse heat conduction problem and improving the stability and accuracy of the solutions.
硅(111)衬底上直接接枝巯基的方法
A Method for Attaching Thiol Groups Directly on a Silicon (111) Substrate

张小宁(),HOLLIMON Valerie,BRODUS DaShan
- , 2016, DOI: 10.3866/PKU.WHXB201605182
Abstract: 硅衬底是很有应用前景的表面。这是因为硅衬底在机械上和化学上的适应性能够抵御水环境和有机环境带来的影响。除此之外,优良的电学性质也是它们成为具有应用前景的表面的原因。目前有许多方法来进行硅表面的巯基化,很多情况下是将具有―SH末端的分子接枝到硅衬底上。但这些方法存在反应时间长的问题。在这篇报导中,我们发展了一种新的硅表面巯基化方法。这种方法可以实现将巯基直接接枝到硅片表面。新方法需要对硅衬底进行氯化和巯基化反应,所需的反应时间缩短。X射线光电子能谱(XPS)和接触角测量被用于研究反应中每个步骤的表面表征。
Silicon surfaces are promising interfaces because they are mechanically and chemically resilient, able to resist wear in aqueous and organic environments, and display good electrical properties. There are a number of methods that are used to thiolate a silicon surface, notably through the attachment of molecules that contain terminal ―SH moieties. These methods usually suffer from long reaction times. In the present work, we developed an alternative method for thiolation of a silicon surface by introducing terminal thiol groups directly onto the silicon surface. The developed wet chemical process relies on chlorination and then surface thiolation and requires less time for grafting thiol groups on the silicon substrate. X-ray photoelectron spectroscopy (XPS) and contact angle measurement were employed for surface characterization after each step
In Situ Loading of Basic Fibroblast Growth Factor Within Porous Silica Nanoparticles for a Prolonged Release
Zhang Jin,Postovit Lynne-Marie,Wang Dashan,Gardiner Richard
Nanoscale Research Letters , 2009,
Abstract: Basic fibroblast growth factor (bFGF), a protein, plays a key role in wound healing and blood vessel regeneration. However, bFGF is easily degraded in biologic systems. Mesoporous silica nanoparticles (MSNs) with well-tailored porous structure have been used for hosting guest molecules for drug delivery. Here, we report an in situ route to load bFGF in MSNs for a prolonged release. The average diameter (d) of bFGF-loaded MSNs is 57 ± 8 nm produced by a water-in-oil microemulsion method. The in vitro releasing profile of bFGF from MSNs in phosphate buffer saline has been monitored for 20 days through a colorimetric enzyme linked immunosorbent assay. The loading efficiency of bFGF in MSNs is estimated at 72.5 ± 3%. In addition, the cytotoxicity test indicates that the MSNs are not toxic, even at a concentration of 50 μg/mL. It is expected that the in situ loading method makes the MSNs a new delivery system to deliver protein drugs, e.g. growth factors, to help blood vessel regeneration and potentiate greater angiogenesis.
Towards the Complete Relational Graph of Fundamental Circuit Elements
Dashan Shang,Yisheng Chai,Zexian Cao,Jun Lu,Young Sun
Physics , 2015, DOI: 10.1088/1674-1056/24/6/068402
Abstract: A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In addition to resistor, capacitor and inductor which are defined in terms of a linear relationship between the charge q, the current i, the voltage v, and the magnetic flux, Chua proposed in 1971 the fourth linear circuit element to directly relate magnetic flux and charge. A non-linear resistive device defined in memory i-v relation and dubbed memristor, was later attributed to such an element and has been realized in various material structures. Here we clarify that the memristor is not the true fourth fundamental circuit element but the memory extension to the concept of resistor, in analogy to the extension of memcapacitor to capacitor and meminductor to inductor. Instead, a two-terminal device employing the linear magnetoelectric effects, termed transtor, possesses the function of relating directly flux and charge and should take the position of the fourth linear element. Moreover, its memory extension, termed memtranstor, is proposed and analyzed here.
Super-resolution deep imaging with hollow Bessel beam STED microscopy
Wentao Yu,Ziheng Ji,Dashan Dong,Xusan Yang,Yunfeng Xiao,Qihuang Gong,Peng Xi,Kebin Shi
Physics , 2015, DOI: 10.1002/lpor.201500151
Abstract: Stimulated emission depletion (STED) microscopy has become a powerful imaging and localized excitation method beating the diffraction barrier for improved lateral spatial resolution in cellular imaging, lithography, etc. Due to specimen-induced aberrations and scattering distortion, it has been a great challenge for STED to maintain consistent lateral resolution deeply inside the specimens. Here we report on a deep imaging STED microscopy by using Gaussian beam for excitation and hollow Bessel beam for depletion (GB-STED). The proposed scheme shows the improved imaging depth up to ~155{\mu}m in solid agarose sample, ~115{\mu}m in PDMS and ~100{\mu}m in phantom of gray matter in brain tissue with consistent super resolution, while the standard STED microscopy shown a significantly reduced lateral resolution at the same imaging depth. The results indicate the excellent imaging penetration capability of GB-STED, making it a promising tool for deep 3D imaging optical nanoscopy and laser fabrication.
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