oalib

OALib Journal期刊

ISSN: 2333-9721

费用:99美元

投稿

时间不限

2018 ( 1 )

2017 ( 571 )

2016 ( 741 )

2015 ( 7820 )

自定义范围…

匹配条件: “CHEN Zhang-Li” ,找到相关结果约237111条。
列表显示的所有文章,均可免费获取
第1页/共237111条
每页显示
A study on segmentation characteristics of aftershock source parameters of Wenchuan M8.0 earthquake in 2008
2008年汶川8.0级地震序列震源参数分段特征的研究

HUA Wei,CHEN Zhang-Li,ZHENG Si-Hua,
华卫

地球物理学报 , 2009,
Abstract: 本文利用四川省区域固定地震台网观测记录到的2008年汶川8.0级地震序列的资料,从中挑选部分台站和地震资料,在精确扣除了余震区地震波衰减与台站场地响应后,计算得到了汶川地震序列中1070次ML≥3.0级地震的震源参数,结果显示,地震矩与震级之间有较好的线性关系,应力降和视应力的大小与震级大小有关.利用ML3.0级地震资料得到的应力降的时空演变过程研究结果表明,汶川余震序列地震应力降总体上随时间是一个衰减过程,预示着主震发生后整个余震区应力降呈逐渐衰减的状态.主震发生之后,以虎牙-北川-安县为界,空间上龙门山断裂带上地震活动水平和应力降具有明显的分段性.5月17日之前ML≥5.0余震主要集中在龙门山断裂带北川以西,由于地震释放了较多应力,该地区应力降较低,而北川至青川之间地震活动水平相对较弱,应力降一直处于高值水平.5月17日之后,ML≥5.0余震活动主体地区则转移到北川至青川之间,在该段发生了5月25日青川6.4级最大余震,在这之后,整个余震序列应力降随时间变化开始趋于平稳.
Moment inversion of moderate earthquakes and the locally perturbed stress field in the Jiashi source region
伽师震源区中等强度地震矩张量反演及其应力场特征

ZHAO Cui-Ping,CHEN Zhang-Li,ZHENG Si-Hua,ZHANG Zhi-Qiang,
赵翠萍

地球物理学报 , 2008,
Abstract: 使用区域数字地震台站记录的宽频带长周期波形资料,在时间域反演了1997~2004年伽师震源区52次中等强度地震的矩张量.反演结果揭示,在小尺度的伽师震源区内,震源机制解的P轴、T轴和N轴呈现出明显的分区特征.本文进一步把伽师震源区分为东区和西区,分别反演了东区与西区的应力场.应力场反演结果表明,东区的应力场主压应力轴走向为321°,基本水平.最大主张应力走向68°,倾角40°.截至2004年7月,伽师震源区西部的应力场一直较为稳定,最大主压应力方向为12°,最大主张应力方向282°,二者都基本水平,中等主应力轴基本直立.自西向东,伽师震源区最大主压应力轴逆时针旋转了49°,并且西区张应力的水平作用较为显著,东区压应力的水平作用显著.应力场的这种非均匀变化特征与GPS观测得到的地壳运动速率的空间分布以及塔里木盆地边界附近的地形地貌特征有很好的一致性.震源区深部结构的陡变以及位于震源区东部边界规模较大的NW走向的普昌断裂和色力布亚隐伏断裂可能对产生这种横向非均匀的局部应力场起了重要的作用.
Tomography of QLg in Sichuan-Yunnan Zone
川滇地区Lg波Q值层析成像

ZHOU Lian-Qing,ZHAO Cui-Ping,XIU Ji-Gang,CHEN Zhang-Li,
周连庆

地球物理学报 , 2008,
Abstract: 利用云南和四川数字地震观测台网记录的数字化地震资料,开展了川滇地区不同频率的QLg层析成像研究,反演结果的空间分辨率小于100 km.反演结果表明,川滇地区介质的横向不均匀性强烈,QLg高低值差异显著.川滇地区显著的高衰减区有川滇菱形块体的东南边界(即沿鲜水河至安宁河以及思茅—澜沧—普洱区),滇西北地区、龙门山断裂以西松潘—茂文地区、巴塘及理塘强震区等,Lg波高衰减区的分布与构造活动强烈、强震活动或大震破裂造成介质破碎区、低速区等相关,表明构造活动强烈或大震破裂造成的介质破碎、热物质沿活动断裂上涌等可能是川滇地区低QLg的主要成因.显著的低衰减区有川东盆地、滇东南地区以及金沙江、怒江断裂的中段区域,滇中块体内部也呈现出相对的低衰减特征.Lg波低衰减区与地震活动性弱、速度正异常等相关,表明川滇地区Lg波的低衰减区与地壳变形、地震活动性及水热活动弱、块体稳定等有关.
Study on precise relocation of Longtan reservoir earthquakes and its seismic activity
龙滩水库地震精定位及活动特征研究

CHEN Han-Lin,ZHAO Cui-Ping,XIU Ji-Gang,CHEN Zhang-Li,
陈翰林
,赵翠萍,修济刚,陈章立

地球物理学报 , 2009,
Abstract: In this paper, we relocated earthquakes occurred around Longtan reservoir from 2006 to 2007 by using hypoDD relocation method and waveform cross-correlation technique, analyzed its seismic activity. Relocation results by applying the waveform cross-correlation technique and hypoDD method demonstrates that the earthquake location quality are obviously enhanced. Analysis of the characteristics of seismicity around Longtan reservoir proved that there is a tight correlation between the seismic activity around Longtan reservoir and the process of reservoir recharge. Earthquakes clustered around Longtan reservoir region and performed different response corresponding to water level change respectively, indicating that there may exist local differences of lithological characteristic, penetrative condition, geological structure, as well as stress field condition around the Longtan reservoir.
A study on the occurrence background and process of Wenchuan MS8.0 earthquake
汶川MS8.0级地震发生背景与过程的研究

CHEN Zhang-Li,ZHAO Cui-Ping,WANG Qin-Cai,HUA Wei,ZHOU Lian-Qing,SHI Hai-Xia,CHEN Han-Lin,
陈章立

地球物理学报 , 2009,
Abstract: 本文首先阐明汶川MS8.0级地震发生在由区域布格重力异常和地震震中分布所确定的武都—松潘—茂汶—汶川—泸定地震带上.汶川地震所在地段是地震前兆和中小地震(M≤7.0)的空白区,震前出现明显的孕震空区,MS8.0级地震发生在空区周围区域中小地震活动峰值之后的减少段里.地震的破裂超出孕震空区范围,空区内、外余震活动呈现出不同的衰减特征,依此将余震活动分为WS和NE两个区段.地震破裂过程、4级以上余震矩张量及震区应力场反演和余震应力降的测定结果表明,两个区域的位错、余震机制解和应力降及最大主应力的方〖JP2〗向等明显有别.根据这些特征和地震应力触发的研究,推测NE段地震的发生可能是〖JP〗由WS段主破裂的发生所触发.
Impact of substrate bias on radiation-induced edge effects in MOSFETs

Hu Zhi-Yuan,Liu Zhang-Li,Shao-Hu,Zhang Zheng-Xuan,Ning Bing-Xu,Chen Ming,Bi Da-Wei,Zou Shi-Chang,

中国物理 B , 2011,
Abstract: This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.
Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Liu Zhang-Li,Hu Zhi-Yuan,Zhang Zheng-Xuan,Shao Hu,Chen Ming,Bi Da-Wei,Ning Bing-Xu,Zou Shi-Chang,

中国物理 B , 2011,
Abstract: Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions. The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed. The high electric fields at the corners are partly responsible for the subthreshold hump effect. Charge trapped in the isolation oxide, particularly at the Si/SiO2 interface along the sidewalls of the trench oxide creates a leakage path, which becomes a dominant contributor to the off-state drain-to-source leakage current in the NMOSFET. Non-uniform charge distribution is introduced into a three-dimensional (3D) simulation. Good agreement between experimental and simulation results is demonstrated. We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.
Total ionizing dose effect in an input/output device for flash memory

Liu Zhang-Li,Hu Zhi-Yuan,Zhang Zheng-Xuan,Shao Hu,Chen Ming,Bi Da-Wei,Ning Bing-Xu,Zou Shi-Chang,

中国物理 B , 2011,
Abstract: Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.
Research on English Character Recognition Method Based on Center and Circumference
基于中心与圆周的英文字符识别方法研究

LAN Zhang-Li,
蓝章礼

计算机科学 , 2007,
Abstract: This paper addresses an English character recognition method based on center and circumference (CCR)aiming at the problem that exiting recognition methods can't recognize inclined character. CCR recognizes English character by analyzing the center and circumference with proper radius. This paper proves CCR can recognize English character correctly which is incline with any angle by theoretical analyzing and experiment, and gives some problems needed to research further.
Study on Stability Factors of Laser & Image Deflection Method and Solve Strategy
影响激光图像挠度测量方法稳定性的因素及应对策略研究

LAN Zhang-Li,
蓝章礼

计算机科学 , 2007,
Abstract: This paper addresses stability factors of images in laser & image deflection measurement.We point out real reasons to affect system stability,derive a series method to preprocess image of laser spot.Those methods remove natural light,scattering light and diffracted ray effectively,and an ideal result is obtained.
第1页/共237111条
每页显示


Home
Copyright © 2008-2017 Open Access Library. All rights reserved.