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Search Results: 1 - 10 of 24 matches for " Bhaiyalal Birla "
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COMPREHENSIVE FRAMEWORK FOR PATTERN ANALYSIS THROUGH WEB LOGS USING WEB MINING: A REVIEW
Bhaiyalal Birla,Sachin Patel,Hemlata Sunhare?
International Journal of Computer Science and Mobile Computing , 2013,
Abstract: Web server log repositories are great source of knowledge, whichkeeps the record of web usage patterns of different web users. The Web usagepattern analysis is the process of identifying browsing patterns by analyzingthe user’s navigational behavior. World Wide Web is a large amount of dataprovider and a very large source of information. Users are increasing day byday for accessing web sites. For effective and efficient handling, web miningcoupled with suggestion techniques provides personalized contents at thedisposal of users. Web Mining is an area of Data Mining dealing with theextraction of interesting knowledge from the Web. Here we are presenting apersonalization process based on Web usage mining. This paper reviews theprocess of discovering useful patterns from the web server log file. In this ahost of Web usage mining activities required for this process, including thepre-processing and integration of data from multiple sources, and commonpattern discovery techniques that are applied to the integrated usage data.
Long Term Excessive Zn Supplementation Induced Oxidative Stress in Wistar Rats Fed on Semi-Synthetic Diet  [PDF]
Kshetrimayum Birla Singh
Food and Nutrition Sciences (FNS) , 2012, DOI: 10.4236/fns.2012.36098
Abstract: The use of Zn as micronutrient in husbandry and agriculture practices and also in baby foods and multivitamin supplements have been increased during the last two decades. However, the effect of long term increasing Zn load on the oxidative stress in the body has not been worked so far. The supplementation of pharmacological dosage of Zn in otherwise Zn adequate diet was investigated with the aim if excess Zn in the diet triggers oxidative stress and its conesquence on enzymes of antioxidant defense system. In this study, three groups of rats were fed on semi-synthetic diet containing 20 mg Zn/kg (control, group-I), 40 mg Zn/kg (group-II) and 80 mg Zn/kg (group-III) diet respectively for a period of 6 months. Blood lipid profile in the serum, lipid peroxidation status and the activities of antioxidant enzymes and trace minerals level were estimated both in the liver and kidney of three groups of rats. The study revealed that the gain in body weight increased in rats in Zn concentration dependent manner. The blood lipid profile displayed a significant rise in serum glucose, total lipids, cholesterol, triglycerides, LDL-cholesterol, VLDL-cholesterol whereas HDL-cholesterol showed a reduction in their levels in group-II and III than their control counter parts. The lipid peroxidation products were higher and the enzyme activities of superoxide dismutase, catalase, glutathione-s-transferase, glutathione reductase, glutathione (reduced) and glucose-6-phosphate dehydrogenase were significantly lowered in liver and kidney of group-II and group-III. Their mineral status revealed a higher Zn concentration and lower Cu, Mg and Mn both in liver and kidney. This data suggest that Zn in excess in diet when fed for longer periods of time induces oxidative stress by altering the status of minerals.
Molecular Basis of Hypertension: A Systematic Review on the Role of Metal Ions for Increase Prevalence of Hypertension in India  [PDF]
Kshetrimayum Birla Singh
Journal of Biosciences and Medicines (JBM) , 2016, DOI: 10.4236/jbm.2016.47002
Abstract: Metal ions played critical role in regulation of hypertension (HT) or blood pressure (BP). The physiological roles of metals commonly present in the diet in the etiology of HT need to be reviewed as recent survey on the metal status in the various vegetable and meat food stuffs commonly consumed by living population in India revealed an imbalance in its level. Higher levels of zinc (Zn) in diet is observed to increase the BP by various mechanisms including oxidative stress through decreased activity of superoxide dismutase (SOD) enzyme, increasing levels of angiotensin converting enzyme (ACE) and aldosterone and by causing acidification due to change in the levels of H+, Na+, K+ and Ca2+ ions in the blood. High level of copper (Cu) and low level of magnesium (Mg) and manganese (Mn) in the blood is also associated with HT through various mechanisms like elevation of chronic inflammation, accelerating Na+ pump of cell membrane and by disturbing lipid metabolism in the body. An epidemiological study conducted in the population of Manipur, India consuming Zn rich diet reveals significant disparities in distribution of the metals in the blood of the hypertensive (HTS) patients as compared to the normotensives (NT) control and thus indicates that the change in body metal homeostasis may be a triggering factor for the development of HT in this population and corroborate the reports of published literatures. The role of the metals variations in the body and their possible involvement in HT is reviewed and discussed in this paper.
Stability and Leakage Analysis of a Novel PP Based 9T SRAM Cell Using N Curve at Deep Submicron Technology for Multimedia Applications  [PDF]
Shilpi Birla, Rakesh Kumar Singh, Manisha Pattanaik
Circuits and Systems (CS) , 2011, DOI: 10.4236/cs.2011.24038
Abstract: Due to continuous scaling of CMOS, stability is a prime concerned for CMOS SRAM memory cells. As scaling will increase the packing density but at the same time it is affecting the stability which leads to write failures and read disturbs of the conventional 6T SRAM cell. To increase the stability of the cell various SRAM cell topologies has been introduced, 8T SRAM is one of them but it has its limitation like read disturbance. In this paper we have analyzed a novel PP based 9T SRAM at 45 nm technology. Cell which has 33% increased SVNM (Static Voltage Noise Margin) from 6T and also 22%.reduced leakage power. N curve analysis has been done to find the various stability factors. As compared to the 10T SRAM cell it is more area efficient.
Effect of Temperature & Supply Voltage Variation on Stability of 9T SRAM Cell at 45 nm Technology for Various Process Corners  [PDF]
Manisha Pattanaik, Shilpi Birla, Rakesh Kumar Singh
Circuits and Systems (CS) , 2012, DOI: 10.4236/cs.2012.32027
Abstract: Due to the continuous rising demand of handheld devices like iPods, mobile, tablets; specific applications like biomedical applications like pacemakers, hearing aid machines and space applications which require stable digital systems with low power consumptions are required. As a main part in digital system the SRAM (Static Random Access Memory) should have low power consumption and stability. As we are continuously moving towards scaling for the last two decades the effect of this is process variations which have severe effect on stability, performance. Reducing the supply voltage to sub-threshold region, which helps in reducing the power consumption to an extent but side by side it raises the issue of the stability of the memory. Static Noise Margin of SRAM cell enforces great challenges to the sub threshold SRAM design. In this paper we have analyzed the cell stability of 9T SRAM Cell at various processes. The cell stability is checked at deep submicron (DSM) technology. In this paper we have analyzed the effect of temperature and supply voltage (Vdd) on the stability parameters of SRAM which is Static Noise Margin (SNM), Write Margin (WM) and Read Current. The effect has been observed at various process corners at 45 nm technology. The temperature has a significant effect on stability along with the Vdd. The Cell has been working efficiently at all process corners and has 50% more SNM from conventional 6T SRAM and 30% more WM from conventional 6T SRAM cell.
A Prospective Survey Comparing Patients’ Experience of a Nurse-Led Clinic and Consultant-Led Clinic for Surveillance of Patients with Dilatation of the Intrathoracic Aorta  [PDF]
Bhuvaneswari Krishnamoorthy, Rashmi Birla, William R. Critchley, Paul D. Waterworth
World Journal of Cardiovascular Surgery (WJCS) , 2019, DOI: 10.4236/wjcs.2019.92003
Abstract: Background: Increasing workload in consultant-led clinics often means patients to wait a long time for clinic appointments. To address this, there is an increasing trend in developing nurse-led clinics across many specialities in the National Health Service. This study aims to assess whether the implementation of a nurse-led clinic in thoracic aortic surgery will optimise the utilisation of health care services and improve overall patient satisfaction. Methods: 80 follow-up patients were asked to complete a questionnaire following their appointment in an aortic clinic, which was led either by a consultant (n = 40) or an aortic specialist nurse (n = 40). All patients seen by a nurse in the clinic were assessed by a consultant surgeon prior to the clinic for suitability. No new patients were seen by a nurse. Any patient with an aortic dimension of 5 cm or greater was seen by the consultant. If there were any complicated clinical features, the patient was seen in the consultant-led clinic. Patients were asked questions about their time spent with the respective health care professionals across 12 categories (punctuality, preparedness, understanding of concerns, clarity of speech, listening, respect, explaining, letting you talk, putting you at ease, emotional support, advice and advice for next follow-up). Patients rated each category using an ordinal scale from 0 - 10. Results: Patient scores were greater in nurse-led clinics compared to consultant-led clinics across a number of categories although only punctuality reached significance (mean 9.2 vs. 6.8, p < 0.001). Scores for preparedness (mean 9.5 vs. 9.0, p = 0.29) and understanding of worries (mean 9.8 vs. 9.5, p = 0.18) were higher in nurse-led clinics but were not significant. Similar scores for both nurse and consultant-led clinics were recorded for the remaining categories: (p > 0.05). Conclusion: Patients were highly satisfied with the nurse-led clinic across all categories, with greater satisfaction for punctuality. These findings suggest that a nurse-led clinic can be implemented for the management of carefully selected thoracic aortic surgery patient without reduction in patient satisfaction.
Right Ventricular Failure Following Acute Type A Aortic Dissection: An Alternative Strategy  [PDF]
Ruchir P. Mashar, Rashmi P. Birla, Paul D. Waterworth
World Journal of Cardiovascular Surgery (WJCS) , 2019, DOI: 10.4236/wjcs.2019.93004
Abstract: Coronary malperfusion is a complication of aortic dissection, and can lead to ventricular failure. We report 2 cases of right ventricular (RV) failure, following aortic dissection, successfully bridged to recovery using right ventricular assist devices (RVADs). The first was a 54 year-old man, who had difficulty weaning from bypass due to a stunned RV following aortic root replacement. The second was a 34 year-old woman, who after replacement of the ascending aorta, suffered episodes of ventricular fibrillation (VF), and RV failure. Both had an RVAD implanted, allowing eventual recovery. We recommend more widespread use of VADs in such cases.
Theory of Electric Double Layer Dynamics at Blocking Electrode
Maibam Birla Singh,Rama Kant
Physics , 2011,
Abstract: A phenomenological theory of electric double layer polarization of blocking electrode is presented solving modified Debye-Falkenhagen (MDF) equation for potential, under the impedance boundary condition. The dynamic impedance and capacitance are obtained in terms Debye screening length and frequency dependent polarization length. Two characteristic relaxation frequencies for compact layer and diffuse layer are identified. At frequencies less than Helmholtz layer relaxation frequency the EDL is perfectly blocking. At frequencies larger than the diffuse layer relaxation frequency the EDL behaves like a resistor. At crossover frequencies the electrode is polarized. Theoretical results agrees well with experimental capacitance dispersion data.
Generalization of Linearized Gouy-Chapman-Stern Model of Electric Double Layer for Nanostructured and Porous Electrodes: Deterministic and Stochastic Morphology
Rama Kant,Birla S. Maibam
Physics , 2012, DOI: 10.1103/PhysRevE.88.052303
Abstract: We generalize linearized Gouy-Chapman-Stern theory of electric double layer for nanostructured and morphologically disordered electrodes. Equation for capacitance is obtained using linear Gouy-Chapman (GC) or Debye-$\rm{\ddot{u}}$ckel equation for potential near complex electrode/electrolyte interface. The effect of surface morphology of an electrode on electric double layer (EDL) is obtained using "multiple scattering formalism" in surface curvature. The result for capacitance is expressed in terms of the ratio of Gouy screening length and the local principal radii of curvature of surface. We also include a contribution of compact layer, which is significant in overall prediction of capacitance. Our general results are analyzed in details for two special morphologies of electrodes, i.e. "nanoporous membrane" and "forest of nanopillars". Variations of local shapes and global size variations due to residual randomness in morphology are accounted as curvature fluctuations over a reference shape element. Particularly, the theory shows that the presence of geometrical fluctuations in porous systems causes enhanced dependence of capacitance on mean pore sizes and suppresses the magnitude of capacitance. Theory emphasizes a strong influence of overall morphology and its disorder on capacitance. Finally, our predictions are in reasonable agreement with recent experimental measurements on supercapacitive mesoporous systems.
Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology  [PDF]
Shilpi Birla, Neeraj Kumar Shukla, Kapil Rathi, Rakesh Kumar Singh, Manisha Pattanaik
Circuits and Systems (CS) , 2011, DOI: 10.4236/cs.2011.24045
Abstract: In Present scenario battery-powered hand-held multimedia systems become popular. The power consumption in these devices is a major concern these days for its long operational life. Although various techniques to reduce the power dissipation has been developed. The most adopted method is to lower the supply voltage. But lowering the Vdd reduces the gate current much more rapidly than the sub-threshold current and degrades the SNM. This degraded SNM further limits the voltage scaling. To improve the stability of the SRAM cell topology of the conventional 6T Static Random Access Memory (SRAM) cell has been changed and revised to 8T and 10T cell, the topologies. This work has analyzed the SRAM’s Static Noise Margin (SNM) at 8T for various process corners at 65nm technology. It evaluates the SNM along with the write margins of the cell along with the cell size of 8T SRAM bit-cell operating in sub-threshold voltage at various process corners. It is observed that an 8T cell has 13 % better write margin than conventional 6T SRAM cell. This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65nm technology at various process corners (TT, SS, FF, FS, and SF).
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