Abstract:
We have explored the effects of the Li intercalation on the electronic and magnetic properties of transition-metal (TM) doped anatase TiO$_2$. By Li intercalation, Mn-doped TiO$_2$ exhibits the insulator to metal transition. On the other hand, Li-intercalated Fe-doped TiO$_2$ has the insulating ground state for low concentration of Li/Ti=0.067, but the metallic ground state for high concentration of Li/Ti=0.133. We discuss the $n$-type carrier induced ferromagnetism in Li-intercalated TM-doped anatase TiO$_2$. Based on the Li-intercalated TM-doped anatase TiO$_2$, we propose a potential spintronic and electrochromic device controlled by the electric-field.

Abstract:
We have theoretically designed the half-metallic (HM) antiferromagnets (AFMs) in thiospinel systems, $\rm Mn(CrV)S_{4}$ and $\rm Fe_{0.5}Cu_{0.5}(V_{0.5}Ti_{1.5})S_{4}$, based on the electronic structure studies in the local-spin-density approximation (LSDA). We have also explored electronic and magnetic properties of parent spinel compounds of the above systems; $\rm CuV_{2}S_{4}$ and $\rm CuTi_{2}S_{4}$ are found to be HM ferromagnets in their cubic spinel structures, while $\rm MnCr_{2}S_{4}$ is a ferrimagnetic insulator. We have discussed the feasibility of material synthesis of HM-AFM thiospinel systems.

Abstract:
We have investigated electronic structures and magnetic properties of potential ZnO based diluted magnetic semiconductors: (Fe, Co) and (Fe, Cu) codoped ZnO. The origins of ferromagnetism are shown to be different between two. (Fe, Co) codoped ZnO does not have a tendency of Fe-O-Co ferromagnetic cluster formation, and so the double exchange mechanism will not be effective. In contrast, (Fe, Cu) codoped ZnO has a tendency of the Fe-O-Cu ferromagnetic cluster formation with the charge transfer between Fe and Cu, which would lead to the ferromagnetism through the double-exchange mechanism. The ferromagnetic and nearly half-metallic ground state is obtained for (Fe, Cu) codoped ZnO.

Abstract:
We have investigated effects of an external magnetic field in the impurity Anderson model with a finite on-site Coulomb repulsion $U$. Large $N_f$ expansion is employed in the slave boson representation, by taking into account $f^0$, $f^1$, and $f^2$ subspaces. To evaluate the vertex function for the ``empty state boson" self-energy, we have devised two approximations which reduce much computational efforts without losing general features of the model. It is found that the Kondo temperature is reduced by the presence of a magnetic field, and that at low field and at low temperature, the field dependence of both the Kondo temperature and the impurity magnetization exhibits a scaling behavior with high accuracy. Further, some interesting features are found in the field dependence of the impurity magnetization at finite temperature, the physical implications of which are discussed in terms of the renormalized Kondo temperature.

Abstract:
Employing the Anderson impurity model, we study tunneling properties through an ideal quantum dot near the conductance minima. Considering the Coulomb blockade and the quantum confinement on an equal footing, we have obtained current contributions from various types of tunneling processes; inelastic cotunneling, elastic cotunneling, and resonant tunneling of thermally activated electrons. We have found that the inelastic cotunneling is suppressed in the quantum confinement limit, and thus the conductance near its minima is determined by the elastic cotunneling at low temperature ($k_BT \ll \Gamma$, $\Gamma$: dot-reservoir coupling constant), or by the resonant tunneling of single electrons at high temperature ($k_BT \gg \Gamma$).

Abstract:
We have developed a new self-consistent scheme of generating variational basis based on the exactdiagonalization, which can be applied efficiently to various types of electron-phonon systems. This scheme is quite general and brings down the size of the variational space by an order of magnitude or even more in some cases to reproduce the most precise ground state energies and correlation functions available in the literature. This method has enormous potential for application to systems with more electrons or in higher dimensions, which are still beyond the reach of exact-diagonalization just because of the sheer size of their variational space needed to get reasonably convergent results.

Abstract:
We have investigated the temperature (T)-dependent evolution of electronic structures and magnetic properties of an itinerant ferromagnet SrRuO3, employing the combined scheme of the density functional theory and the dynamical mean-field theory (DFT+DMFT). The inclusion of finite dynamical correlation effects beyond the DFT well describes not only the incoherent hump structure observed in the photoemission experiment but also the T-dependent magnetic properties in accordance with experiments. We have shown that the magnetization of SrRuO3 evolves with the Stoner behavior below the Curie temperature (Tc), reflecting the weak itinerant ferromagnetic behavior, but the local residual magnetic moment persists even above Tc, indicating the local magnetic moment behavior. We suggest that the ferromagnetism of SrRuO3 has dual nature of both weak and local moment limits, even though the magnetism of SrRuO3 is more itinerant than that of Fe.

Abstract:
We have investigated electronic structures and magnetic properties of O$_{2}$$M$F$_{6}$ ($M$=Sb, Pt), which are composed of two building blocks of strongly correlated electrons: O$_{2}^{+}$ dioxygenyls and $M$F$_{6}^{-}$ octahedra, by employing the first-principles electronic structure band method. For O$_{2}$SbF$_{6}$, as a reference system of O$_{2}$PtF$_{6}$, we have shown that the Coulomb correlation of O(2$p$) electrons drives the Mott insulating state. For O$_{2}$PtF$_{6}$, we have demonstrated that the Mott insulating state is induced by the combined effects of the Coulomb correlation of O(2$p$) and Pt(5$d$) electrons and the spin-orbit (SO) interaction of Pt(5$d$) states. The role of the SO interaction in forming the Mott insulating state of O$_{2}$PtF$_{6}$ is similar to the case of Sr$_{2}$IrO$_{4}$ that is a prototype of a SO induced Mott system with J$_{eff}=1/2$.

Abstract:
We have investigated electronic and magnetic properties of ultrathin SrRuO$_{3}$ (SRO) film grown on (111) SrTiO$_{3}$ substrate using the {\it ab initio} electronic structure calculations. Ru-terminated SRO (111) film suffers from strong surface atomic relaxations, while SrO$_{3}$-terminated one preserves the surface structure of ideal perovskites. Both Ru- and SrO$_{3}$-terminated SRO (111) film show unexpected interlayer antiferromagnetic (AFM) structure at the surface, but with different characters and mechanisms. The AFM structure for the former results from the large surface atomic relaxation, whereas that for the latter results from the truncated film effect. Interestingly, for the SrO$_{3}$-termination case, the half-metallic nature emerges despite the interlayer AFM structure. Upon reducing the thickness, the collapsing behavior of magnetic anisotropy from out-of-plane to in-plane easy axis is found to occur for the Ru-termination case, which, however, does not pertain to SrO$_{3}$-termination case.

Abstract:
Based on the combined model of the double exchange and the polaron, we have studied the small-to-large polaron crossover transition and explored its effects on the magnetic and transport properties in colossal magnetoresistance (CMR) manganites. We have used the variational Lang-Firsov canonical transformation, and shown that the magnetic and transport properties of both high and low $T_C$ manganites are well described in terms of a single formalism. We have reproduced the rapid resistivity drop below $T_C$, a realistic CMR ratio, and the {\it first-order-like} sharp magnetic phase transition, which are observed in low $T_C$ manganites.