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We report a unique case
of lumbar disc herniation, in particular, with
end-plate and surrounded by extensive ossification, mimicking a tumor with
calcification. A 69-year-old female suffered from right buttock and leg pain.
Computed tomography (CT)
showed an intracanalar mass with calcification or ossification, which most
likely originated from the vertebral
body at the L1/2 level epidural space. On a T1-weighted gadolinium magnetic
resonance image, the capsule of the mass was enhanced and not only the content
of the mass but also that of the L2 vertebral body were partially and slightly
enhanced. The final pathological diagnosis was disc herniation with end-plate
fracture and secondary ossification.
A combination of these pathological conditions as accompanied by both end-plate
fractures and extensive secondary ossifications has not been previously reported. This rare
pathological condition needs to be recognized as a differential diagnosis.
The δ13C value is
widely used to assess the effects of drought on water status in plants.
However, there is little information regarding the δ13C signature in
different organs of rice. We conducted a field study to examine whether the δ13C
among different plant parts would be affected by the intensities of drought,
and to evaluate genotypic variation in δ13C fluctuation among plant
parts affected by drought intensities. Two cultivars, “Nipponbare” (Oryzasativa ssp. japonica) and “Kasalath” (O. sativa ssp. indica), were grown in the field
with a line-source sprinkler system. The δ13C values of panicles,
flag leaves, straws, culms, and roots were measured from plant samples. The δ13C
value increased as drought stress increased, especially in the panicles and roots.
“Nipponbare” showed higher values of δ13C than “Kasalath” under the
well-watered and mild drought stress conditions, but there was no significant
difference between the genotypes in the δ13C value under the severe
drought stress condition. The variation in δ13C value among
different plant parts was also increased with increasing drought stress. In
contrast, these variations were small under well-watered conditions. Furthermore,
there was much greater
Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340°C using Ti2O3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.