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Search Results: 1 - 10 of 107648 matches for " 韩郑生 "
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火灾下型钢混凝土梁力学性能的研究
永乾,林海,经建
工程力学 , 2008,
Abstract: :采用纤维模型法和有限元软件ABAQUS计算了火灾下型钢混凝土梁的变形以及耐火极限,初步了解了型钢混凝土梁的高温力学性能。在此基础上,利用纤维模型法分析了截面尺寸、截面含钢率、受拉钢筋配筋率、型钢屈服强度、钢筋屈服强度、混凝土强度、截面高宽比和钢筋的混凝土保护层厚度等参数对火灾下构件承载力的影响规律,最后提出了型钢混凝土梁耐火极限的实用计算公式。
高碘酸钾氧化孔雀绿催化光度法测定超痕量锰
,王耀光,利平
分析化学 , 1989,
Abstract: 本法基于存在氨三乙酸为活化剂、氟化钠为掩蔽剂,锰(Ⅱ)对高碘酸钾氧化孔雀绿的催化效应,并用正交设计法确定适宜的测定条件,本法测定锰的检测限为0.02ng/mL,可用于饮用水中锰的测定。
白唇鹿食性与繁殖的初步观察
,吴家炎,亦平
兽类学报 , 1989,
Abstract: ?1986年,中、日合作在青海玉树、果洛和四川甘孜等地区对白唇鹿的食性与繁殖作了初步观察.发现白唇鹿取食62种植物,隶属24科,其中有24种为最喜食植物.白唇鹿每年9—11月发情交配,怀孕期8个月,翌年5-6月产仔。
16级灰度320×240像素硅基有机发光驱动电路研究
黄苒,王晓慧,王文博,杜寰,
半导体学报 , 2009,
Abstract: 使用华润上华(CSMC)0.5微米标准CMOS工艺实现了320×240像素硅基有机发光(OLED-on-Silicon)驱动电路。驱动电路集成了4位D/A转换器,实现16级灰度。提出了一种能够实现OLED微显示要求的极小电流驱动的3管电压控制型像素驱动电路。D/A转换器与像素驱动电路均以PMOS晶体管组成。OLED像素驱动中的传输门与电容器能够用来对D/A转换器的输出进行取样。在OLED像素驱动电路中加入一个额外的PMOS管,可以控制D/A转换器只驱动开启的一行,以降低芯片功耗。驱动电路可以正确的工作在50Hz帧频状态下,并给出了最终的电路版图。单个像素面积28.4μm×28.4μm,整个显示区域面积为10.7mm×8.0mm(对角线尺寸为0.52英寸)。测量的像素灰度电压波形表明驱动电路功能正确,测量芯片功耗为350mW左右。
薄栅氧化层0.25μm RF PDSOI NMOSFETs电离总剂量辐照效应研究
刘梦新,,毕津顺,范雪梅,刘刚,杜寰
半导体学报 , 2009,
Abstract: 本文研制了一种与0.1μm SOI CMOS工艺兼容的射频PD SOI NMOSFET,并分析了电离总剂量辐照对四种不同结构射频器件的静态特性和频率特性的影响,分别包括前/背栅阈值、泄漏电流、跨导,输出特性以及交流小信号电流增益和最大有效/稳定增益。实验表明,在室温环境下经过总剂量为1Mrad(Si)的g射线辐照,所有的射频PDSOI NMOSFET的静态和射频特性均表现出明显退化,其中以浮体NMOSFET变化最大。虽然损失了部分驱动电流、开关速度和高频特性,LBBC型体接触结构的射频器件仍表现出优于GBBC和BTS型体接触结构的射频器件的抗电离总剂量辐照的能力。
Investigation of the polysilicon p--i--n diode and diode string as a process compatible and portable ESD protection device
多晶PIN二极管及二极管串作良好工艺兼容并可移植ESD保护器件的研究

Jiang Yibo,Du Huan,Han Zhengsheng,
姜一波
,杜寰,

半导体学报 , 2012,
Abstract: The polysilicon p-i-n diode displayed noticeable process-compatibility and portability in advance technologies as ESD protection device. The paper presented reverse breakdown, current leakage and capacitance characteristics for the fabricated polysilicon p-i-n diode. To evaluate ESD robustness forward and reverse TLP I-V characteristics were measured also. Besides polysilicon p-i-n diode string was investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. To explain the effects of device parameter, analysis and discussion about the inherent properties of polysilicon p-i-n diode were processed finally.
一种能够抑制部分耗尽SOI nMOSFET浮体效应的新型Schottkty体接触结构的模拟(英文)
刘运龙,刘新宇,,海潮和,钱鹤
半导体学报 , 2002,
Abstract: 提出了一种新型的Schottky体接触结构 ,能够有效抑制部分耗尽SOInMOSFET的浮体效应 .这种结构可以通过在源区形成一个浅的n+ p结和二次侧墙 ,然后生长厚的硅化物以穿透这个浅结的方法来实现 .模拟结果表明这种结构能够成功抑制SOInMOSFET中存在的反常亚阈值斜率和kink效应 ,漏端击穿电压也有显著提高 .这种抑制浮体效应的方法不增加器件面积 ,而且与体硅MOSFET工艺完全兼容 .
Model Parameters Extraction of a BSIM SOI Model Based on the Genetic Algorithm
基于遗传算法的BSIM SOI模型参数提取

Li Ruizhen,Han Zhengsheng,
李瑞贞
,

半导体学报 , 2005,
Abstract: 提出了一种提取BSIM SOI模型参数的新方法,该方法基于遗传算法和局部优化法的结合,同时具有全局优化和局部优化的优点,提取的参数物理意义明确,并且容易得到全局最优解.该方法计算简单,不需要对模型进行深入了解和丰富的参数提取经验,易于推广使用.对用该方法得到的SOI模型进行了模拟,并将模拟结果与1.2μm CMOS/SOI测试结果进行对比,二者吻合很好,SOI器件特有的kink效应也得到了很好的拟合.
A novel SOI-DTMOS structure from circuit performance considerations
从电路特性方面考虑而提出的SOI-DTMOS新结构

Song Wenbin,Bi Jinshun,Han Zhengsheng,
宋文斌
,毕津顺,

半导体学报 , 2009,
Abstract: The performance of a partially depleted silicon-on-insulator (PDSOI) dynamic threshold MOSFET (DTMOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce the body resistance greatly, but the body capacitance also increases significantly at the same time. To solve this problem, a novel SOI DTMOSFET structure (drain/source-on-local-insulator structure) is proposed. From ISE simulation, the improvement in delay, obtained by optimizing p-n junction depth and silicon film thickness, is very significant. At the same time, we find that the drive current increases significantly as the thickness of the silicon film increases. Furthermore, only one additional mask is needed to form the local SIMOX, and other fabrication processes are fully compatible with conventional CMOS/SOI technology.
Design of a High Precision Array Pulse Sensor in TCM
中医用高精度阵列脉搏传感器的设计

Huai Yongjin,Han Zhengsheng,
淮永进
,

半导体学报 , 2008,
Abstract: We designed a high-precision array pulse sensor for TCM (traditional Chinese medicine) that can directly transform pulse-pressure signal into electric current signal and is compatible with CMOS technology.We adopted a sacrifice-layer craft for the transistor gate.During testing,we found that the precision of the capacitor for the array sensor is 0.5fF/hPa when the pressure was changing within the range of 1.5kPa to 9.5kPa.More importantly,the output-current and the pressure of the sensor have a good linearity and exponential characteristics.According to the data from the experiment,we conclude that the characteristic of the response-current is related to the area of the MOS gate.
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