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Search Results: 1 - 10 of 40655 matches for " 潘教青 "
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分析化学 , 1977,
Abstract: 测定微量铀(Ⅵ)较常用的是偶氮胂Ⅲ法。该法选择性不高,需要萃取分离,手续较为麻烦。此外也有用偶氮氯膦Ⅲ测定微量铀(Ⅵ)的方法。当试剂在PH~1发色时,灵敏度虽然比偶氮胂Ⅲ高,但干扰元素仍然很多,而且钙离子干扰很严重。资料[1]曾研究该试剂在3NHCl介质中与UO22+发色的条件,但在该条件下有沉淀形成,需加大量的异丙醇(33%)以避免沉淀的产生。

图书情报工作 , 2012,
A high-efficiency high-power evanescently coupled UTC-photodiode

Zhang Yunxiao,Liao Zaiyi,Zhao Lingjuan,Zhu Hongliang,Pan Jiaoqing,Wang Wei,

半导体学报 , 2009,
Abstract: The effects of the multimode diluted waveguide on quantum efficiency and saturation behavior of the evanescently coupled uni-traveling carrier (UTC) photodiode structures are reported. Two kinds of evanescently coupled uni-traveling carrier photodiodes (EC-UTC-PD) were designed and characterized: one is a conventional EC-UTC-PD structure with a multimode diluted waveguide integrated with a UTC-PD; and the other is a compact EC-UTC-PD structure which fused the multimode diluted waveguide and the UTC-PD structure together. The effect of the absorption behavior of the photodiodes on the efficiency and saturation characteristics of the EC-UTC-PDs is analyzed using 3-D beam propagation method, and the results indicate that both the responsivity and saturation power of the compact EC-UTC-PD structures can be further improved by incorporating an optimized compact multimode diluted waveguide.
High-performance electroabsorption modulator

Zhang Wei,Pan Jiaoqing,Zhu Hongliang,Wang Huan,Wang Wei,

半导体学报 , 2009,
Abstract: 通过离子诱导量子阱混杂的方法制备出输入输出两端分别与无源波导集成的电吸收调制器。器件制作过程只需要两步金属汽相外延生长过程,以及传统的光刻,干法刻蚀工艺。为了提高调制速度电吸收调制器的波导长度降到100μm,这将影响到器件的消光比,因此有源区采用了内台阶量子阱结构。材料质量优异的应变补偿的InGaAsP/InGaAsP内台阶量子阱结构可以改善调制性能。这样可以同时得到较高的调制速度与较高的消光比。在本实验中,在未加终端负载的情况下电光频率响应可达22GHz,消光比可达16dB。
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD

Liang Song,Zhu Hong-Liang,Pan Jiao-Qing,Wang Wei,

中国物理 B , 2006,
Abstract: Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.
分析化学 , 1999,
Abstract: 用萃取法对二溴对甲基偶氮羧进行了纯化,并用分光光度法研究了二溴对甲基偶氮羧的质子化和五级离解作用,测定了其质子化常数和逐级离解常数,获得满意的效果。
A method to analyze insertion loss of electroabsorption-modulator using photocurrent and power transmission vs.wavelength

Liao Zai-Yi,Zhao Ling-Juan,Zhang Yun-Xiao,Bian Jing,Pan Jiao-Qing,Wang Wei,

物理学报 , 2009,
Abstract: A novel method to ascertain diversified factors contributing to total insertion loss in an electroabsorption modulator is presented.Only the measurement of photocurrent and power transmission vs.wavelength is needed.It's an accurate method, as shown by both theory analysis and experimental results.
A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator

Liao Zaiyi,Pan Jiaoqing,Zhou Fan,Bian Jing,Zhu Hongliang,Zhao Lingjuan,Wang Wei,

半导体学报 , 2008,
Abstract: 通过在InP基上单片集成光探测器和调制器,制作了三端光逻辑门.在不同的负载电阻下,器件显示了良好的"与"门功能.对芯片进行了622MHz的动态测试;在950Ω负载条件下,只需要约7mw的控制光功率即可获得大于7dB的动态消光比.
Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

Liu Hongbo,Zhao Lingjuan,Kan Qiang,Pan Jiaoqing,Wang Lu,Zhu Hongliang,Zhou Fan,Wang Wei,

半导体学报 , 2008,
Abstract: This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing (QWI) for the first time in mainland China.The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA.The device can work at available channels with SMSR over 35dB.
Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

Liu Yang,Ye Nan,Wang Baojun,Zhou Daibing,An Xin,Bian Jing,Pan Jiaoqing,Zhao Lingjuan,Wang Wei,

半导体学报 , 2010,
Abstract: High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier. Tilted amplifier and anti-reflection facet coating are used to suppress reflection. We have demonstrated sampled grating DBR laser with a tuning range over 38 nm, good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.
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