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Search Results: 1 - 10 of 96180 matches for " 梁春广 "
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GaN——第三代半导体的曙光
广,张冀
半导体学报 , 1999,
Abstract: 自从蓝色GaN/GaInNLEDs研制成功之后,氮化物逐渐成为化合物半导体领域中一颗耀眼的新星.简要介绍了GaN的基本特性.探讨了材料的生长技术,包括衬底的选择和外延方法.最后给出了GaN基器件,如LEDs、LDs、FETs和探测器等的发展现状,同时描绘了氮化物器件的应用领域和未来的发展前景.
我国执业药师制度存在的问题及建议
广,赵东林,卢运超
中国中医药信息杂志 , 2008,
Abstract:
MEMS Class E Amplifier
MEMSE类放大器

顾洪明,吕苗,广,高葆新
半导体学报 , 2003,
Abstract: A class E amplifier can be constructed using either bipolar transistor or MEMS switch.Because of the intrinsic properties of MEMS switch,the amplifier may easily get high efficiency and high power gain.This concept is demonstrated by prototype design and measurement.The measured results show that the mechanical amplifier can act as the active amplifier,with the amplifier efficiency agrees well with the simulation result,and the amplifier power gain tested as high as 2000.
A Radiation Hardened Power Device--VDMNOSFET
一种抗辐射加固功率器件──VDMNOSFET(英文)

刘英坤,广,王长河,李思渊
半导体学报 , 2001,
Abstract: 采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属 -氮化物 -氧化物 -半导体场效应晶体管 ) .给出了该器件的电离辐射效应及瞬态大剂量辐射的实验数据 ,与常规 VDMOSFET相比获得了良好的抗辐射性能 .对研制的 2 0 0 V VDMNOSFET,在栅偏压 +10 V,γ 总剂量为 1Mrad (Si)时 ,其阈值电压仅漂移了 - 0 .5 V,跨导下降了 10 % .在 γ瞬态剂量率达 1× 10 1 2 rad(Si) /s时 ,器件未发生烧毁失效 .实验结果证明 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区显著地改善了功率 MOS器件的
Micromachined Convective Accelerometer
微机械热对流加速度计

LI Li-jie,LIANG Chun-guang,
李立杰
,广

半导体学报 , 2001,
Abstract: A fluid-based accelerometer and inclinometer has been fabricated and tested with particular emphasis on the transducer,which can determine the acceleration,inclination,position or velocity on the basis of temperature differential caused by the effect of acceleration on the free or natural convection.This device consists of a sealed enclosure that contains a kind of gas,in which,there mounts a heater and two temperature sensing elements.The thermal sensors and temperature sensors can be produced by micromachining process,followed by the front silicon etching,with which bridge-based sensors are produced.This device can be easily integrated with servo-circuit.
PECVD SiN_x薄膜应力的研究
赵永军,王民娟,杨拥军,广
半导体学报 , 1999,
Abstract: 等离子增强化学气相淀积(Plasma-enhancedChemicalVaperDeposition,PECVD)SiNx薄膜在微电子和微机械领域的应用越来越重要.它的一个重要的物理参数——机械应力,也逐渐被人们所重视.本文研究了应力跟一些基本的淀积条件如温度、压力、气体流量等之间的关系.讨论了应力产生的原因以及随工艺条件变化的机理.通过工艺条件的合理选择,做出了0.8~1.0μm厚的无应力的PECVDSiNx薄膜
NOISE PERFORMANCE PREDICTION FOR SINGLE-MODE SEMICONDUCTOR LASER DIODE
单模半导体激光器噪声特性预测

Gao Jianjun,Gao Baoxin,Liang Chunguang,
高建军
,高葆新,广

电子与信息学报 , 1998,
Abstract: A noise network model of single-mode semiconductor laser diode is established based on the Harder LD small signal noise model and straightforward calculation of rate equation in the TMS software. The characteristics of frequency response and noise are analyzed by using the presented model.
EQUIVALENT CIRCUIT MODEL OF METAL-SEMICONDUCTOR-METAL PHOTODIODE
一个金属-半导体-金属光电探测器等效电路模型

Gao Jianjun,Gao Baoxin,Liang Chunguang,
高建军
,高葆新,广

电子与信息学报 , 1999,
Abstract: An MSM photodiode equivalent circuit model based on external microwave port characters are presented in this paper, while the parameters of DC and capacitance model preserve the physical meaning. The circuit simulation results are agree with experimental results.
棉铃虫对Bt杀虫剂的抗性遗传方式
郭芳,革梅,广,高希武,郭予元
昆虫学报 , 2010,
Abstract: 随着转基因棉花种植面积的日益增加,棉铃虫Helicoverpaarmigera(Hübner)对Bt的抗性已经成为一个不容忽视的问题。发展转多价基因作物是当前缓解害虫对Bt抗性的最有效措施。本研究以经室内多年筛选的、抗性倍数达2000多倍的Bt杀虫剂(含多种蛋白)抗性品系为材料,通过生物测定和不同的杂交试验,测定棉铃虫对Bt杀虫剂的抗性遗传方式,以期为Bt生物农药的抗性治理提供一定的依据,同时为制定棉铃虫对转多基因作物的抗性治理策略提供一定的参考。对敏感亲本和抗性亲本杂交产生的F1代的研究结果表明,杂交品系的抗性倍数分别为22.2倍和24.6倍;抗性显性度D值均小于0,分别为-0.20和-0.17,抗性为常染色体不完全隐性遗传。对4种回交后代和2种自交后代F2的研究结果表明,实际死亡率与期望死亡率差异较大,说明抗性是由单基因多个位点或多基因控制。
碳纤维表面化学涂覆NiO
华中胜,广,曹卓坤,王磊,马佳,李斯
过程工程学报 , 2009,
Abstract: 采用均相沉淀法在碳纤维表面进行了NiO涂覆,研究了沉淀剂种类、脱水方式、沉淀剂浓度、沉淀剂添加速度和沉积反应时间对涂覆效果的影响.采用SEM和XRD对涂层进行了表征,得到了制备NiO涂层较为合适的工艺条件为以尿素为沉淀剂,采取缓慢升温的方式脱水,沉淀剂浓度0.20mol/L,沉淀剂滴加速度2mL/min,反应时间120min.在此条件下制备的NiO涂层厚度均匀,无脱落现象.抗氧化性测试结果表明,涂覆NiO涂层后,碳纤维的抗氧化性有明显的提高.
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