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In this paper, the current density expression and the unit area conductance for one-dimensional multi-barrier structure in the presence of a constant electric field were derived. For a selected range of parameters of semiconductor materials (GaAs/GaxAl1–xAs), through the numerical calculation the characteristics of unit area conductance versus the applied voltage to the structure was studied. This paper also studied how the characteristics of the conductance-voltage changes with the temperature and the width of the barrier.