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Search Results: 1 - 10 of 139561 matches for " 朱志炜 "
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A Characterization Simulation of a Deep Sub-Micron GGNMOSFET Under TLP Stress
TLP应力下深亚微米GGNMOSFET特性的仿真

Zhu Zhiwei,Hao Yue,
,郝跃

半导体学报 , 2005,
Abstract: Based on simulation,the characteristics and mechanisms of failure on a deep sub-micron grounded-gate NMOS (GGNMOS) are studied under TLP(transmission line pulse) stress.The conclusion is drawn from the analysis that the resistor in series with the gate can reduce the maximum drain voltage;and the electric field across the gate oxide can be enhanced due to the existence of the overlap capacitance between the gate and drain under TLP stress.The electric field across the gate oxide will increase as the rise-time of the applied TLP pulse decreases,which will lead to a premature breakdown of gate oxide.Simulation results show that the overlap capacitance of the gate and drain and the resistor in series with the gate is very important to the turn-on characteristic and ESD patience voltage of the GGNMOS protection structure.These can be provided for future TLP tests and standardizations.
反相高效液相色谱法测定大鼠血浆中左旋黄皮酰胺及其主要代谢产物和药代动力学
传江,张均田,
药学学报 , 2000,
Abstract: 目的 探讨左旋黄皮酰胺[(-)clau]及其主要代谢产物6-oh-clau在大鼠体内的药代动力学。方法 建立了rp-hplc-uv法。固定相为kromasil-100c18(5μm)色谱柱,流动相为乙腈-甲醇-水(21∶16.5∶62.5),dm-9384作内标,氯仿作提取溶剂。结果 测得(-)clau的回收率为96.91%~105.74%,日内、日间rsd低于7%,最低检测浓度为24ng.ml-1,(-)clau和6-oh-clau分别在0.047~968μg.ml-1和0.049~200μg.ml-1,线性关系良好(γ=0.999);(-)clau和6-oh-clau血浆浓度-时间曲线符合二室开放模型,同时求得两者的药代动力学参数。结论 数据表明(-)clau在大鼠血浆中的分布、代谢转化和消除均较快。
复杂体制雷达辐射源信号特征的spa-fahp评估
,,,建渠
计算机应用 , 2014,
Abstract: ?针对复杂体制雷达辐射源信号(ares)特征评估缺乏有效手段和层次分析决策(ahp)过多依赖专家经验的问题,提出了复杂体制雷达辐射源信号特征的集对模糊层次评价模型(spa-fahp)。通过引入三角模糊数对传统层次分析法进行改进,并对复杂体制雷达辐射源信号特征评价指标体系的指标权重作模糊层次分析,以解决对雷达信号大容量数据进行评估时评判者存在不确定或者模糊判断的问题;再引入集对分析(spa)理论对传统层次分析的专家决策矩阵进行改进,并对特征评估决策矩阵作同一度分析,以解决传统层次分析决策时过多依赖专家经验的问题。最后联合指标权重矩阵和决策同一度矩阵实现对复杂体制雷达辐射源信号特征的综合评估。计算结果表明该模型有效可行,能够更客观地实现对复杂体制雷达辐射源信号特征的分析和评估。
Effect of Snapback Stress on Gate Oxide Integrity of nMOSFET in 90nm Technology
Snapback应力对90nm nMOSFET栅氧化层完整性的影响

Zhu Zhiwei,Hao Yue,Ma Xiaohua,
,郝跃,马晓华

半导体学报 , 2007,
Abstract: By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress.The damage incurred during stress causes device degradation that follows an approximate power law with stress time.Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of Qbd (charge to breakdown),and it may also cause the degradation of off-state drain leakage current.Stress-induced gate oxide damage is located not only in the drain side but also in the source side.The tertiary electrons generated by hot holes move toward Si-SiO2 interface under the electrical field toward the substrate,which explains the source side gate oxide damage.
Design on an ESD Protection Circuit with GG-NMOS Structure in CMOS Technology
CMOS工艺中GG-NMOS结构ESD保护电路设计

Du Ming,Hao Yue,Zhu Zhiwei,
杜鸣
,郝跃,

半导体学报 , 2005,
Abstract: An ESD protection circuit which uses a GG-NMOS structure is presented.The operating principle and test results are depicted.An improved project,gate-couple technology,on the circuit is presented,and the anticipated effect is achieved.The ability of the circuit achieves class 2 of the human-body model.It is also indicated that ESD induces damage of the gate oxide with microcosmic mechanisms,where ESD occurs based on simulation.
A Unified Model for Hot-Carrier-Induced Degradation Simulation and Lifetime Prediction of PMOSFET''''s
PMOSFET''s热载流子退化模拟及寿命评估的统一模型

ZHANG Jin cheng,HAO Yue,ZHU Zhi wei,
张进城
,郝跃,

半导体学报 , 2001,
Abstract: The degradation characteristics of several typical device parameters in PMOSFET's with stress time are studied.A new degradation monitor is presented and a unified degradation model for different device parameters is proposed.Comparison between simulation results and measurement results shows that the degradation model has good accuracy and wide applicable range.The new model is useful for both simulation of device parameter degradation and device lifetime prediction.
A New Method of Measuring Plasma Edge Damage
一种新的等离子体边缘损伤的测量方法

ZHU Zhi wei,HAO Yue,ZHANG Jin cheng,
,郝跃,张进城

半导体学报 , 2001,
Abstract: During the plasma etching of poly silicon,owing to the direct exposure of gate edge to plasma,the plasma edge da mages by UV ray will occur at the corner of the gate,including a large number of interface states and oxide traps.The interaction among edge damage,position dependent,antenna ratio and their impact on device reliability is discussed.An accurate charge pumping technique,namely low frequency local CP measurement,is used to characterize the resultant edge damage.The result of experiment covers the information on slow and fast interface states,oxide traps,so it can evaluate the edge damage produced in the process.A compact method is proposed for evaluating the gate edge damage of the thin gate MOSFET.
1961—2009年西北地区东部降水时空分布及成因
,杨建玲,崔洋,
干旱区研究 , 2013,
Abstract: 利用西北地区东部99个站点的逐月降水资料,对降水的时空分布进行研究。西北地区东部降水呈变干趋势,秋季最明显,年降水没有发生明显的突变。近10a,秋季的年代际降水有增加的趋势。西北地区东部降水主要集中在宁夏南部与青海东部。各个季节及年降水的周期性不一致,存在4a、8a和12a左右的周期。用EOF(经验正交分解法)对年降水进行分析,第一模态全区域呈现一致性;第二模态呈现南北相异;第三模态东西相异明显。结合地面状况,发现地形是影响西北地区东部降水分布的重要因素之一,其中最明显的地形系统是高原,六盘山、沙漠戈壁(包括巴丹吉林沙漠、腾格里沙漠和毛乌素沙地)等地形对降水分布也有影响。
聚偏氟乙烯微孔膜的亲水化改性及功能化研究进展
包艳辉,宝库,,徐又一,
功能高分子学报 , 2003,
Abstract: 聚偏氟乙烯(PVDF)微孔膜的亲水化改性方法有物理共混、化学共聚、表面涂覆、表面化学处理、表面接枝等几种。其中物理共混和表面涂覆法比较成熟且已获得应用,而PVDF微孔膜的表面化学处理、等离子体或光引发改性技术以及环境敏感性等将成为PVDF微孔膜的改性和功能化研究的主要方向。
Buck-Boost换流器中分岔现象的机理及预测
薛禹胜,少林,,封士彩
电力系统自动化 , 2004,
Abstract: 电流控制模式的Buck-Boost换流器电路在一定的参数范围内会出现分岔和混沌,研究这些非线性现象的机理及参数范围在理论和电力电子的应用上都非常重要。采用最近提出的基于轨线的非线性动力学方法,在一维观察空间中定义换流器轨迹结构稳定性的稳定裕度,解释了发生分岔及混沌的机理,并用灵敏度分析技术快速估计各分岔点。
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