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Progress in Antimonide Based III-V Compound Semiconductors and Devices  [PDF]
Chao Liu, Yanbo Li, Yiping Zeng
Engineering (ENG) , 2010, DOI: 10.4236/eng.2010.28079
Abstract: In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
Performance Assessment of Kernel Density Clustering for Gene Expression Profile Data
Guoping Shu,Beiyan Zeng,Yiping P. Chen,Oscar H. Smith
Comparative and Functional Genomics , 2003, DOI: 10.1002/cfg.290
Abstract: Kernel density smoothing techniques have been used in classification or supervised learning of gene expression profile (GEP) data, but their applications to clustering or unsupervised learning of those data have not been explored and assessed. Here we report a kernel density clustering method for analysing GEP data and compare its performance with the three most widely-used clustering methods: hierarchical clustering, K-means clustering, and multivariate mixture model-based clustering. Using several methods to measure agreement, between-cluster isolation, and withincluster coherence, such as the Adjusted Rand Index, the Pseudo F test, the r2 test, and the profile plot, we have assessed the effectiveness of kernel density clustering for recovering clusters, and its robustness against noise on clustering both simulated and real GEP data. Our results show that the kernel density clustering method has excellent performance in recovering clusters from simulated data and in grouping large real expression profile data sets into compact and well-isolated clusters, and that it is the most robust clustering method for analysing noisy expression profile data compared to the other three methods assessed.
Vascular Endothelial Growth Factor Receptor-3 Directly Interacts with Phosphatidylinositol 3-Kinase to Regulate Lymphangiogenesis
Sanja Coso, Yiping Zeng, Kenneth Opeskin, Elizabeth D. Williams
PLOS ONE , 2012, DOI: 10.1371/journal.pone.0039558
Abstract: Background Dysfunctional lymphatic vessel formation has been implicated in a number of pathological conditions including cancer metastasis, lymphedema, and impaired wound healing. The vascular endothelial growth factor (VEGF) family is a major regulator of lymphatic endothelial cell (LEC) function and lymphangiogenesis. Indeed, dissemination of malignant cells into the regional lymph nodes, a common occurrence in many cancers, is stimulated by VEGF family members. This effect is generally considered to be mediated via VEGFR-2 and VEGFR-3. However, the role of specific receptors and their downstream signaling pathways is not well understood. Methods and Results Here we delineate the VEGF-C/VEGF receptor (VEGFR)-3 signaling pathway in LECs and show that VEGF-C induces activation of PI3K/Akt and MEK/Erk. Furthermore, activation of PI3K/Akt by VEGF-C/VEGFR-3 resulted in phosphorylation of P70S6K, eNOS, PLCγ1, and Erk1/2. Importantly, a direct interaction between PI3K and VEGFR-3 in LECs was demonstrated both in vitro and in clinical cancer specimens. This interaction was strongly associated with the presence of lymph node metastases in primary small cell carcinoma of the lung in clinical specimens. Blocking PI3K activity abolished VEGF-C-stimulated LEC tube formation and migration. Conclusions Our findings demonstrate that specific VEGFR-3 signaling pathways are activated in LECs by VEGF-C. The importance of PI3K in VEGF-C/VEGFR-3-mediated lymphangiogenesis provides a potential therapeutic target for the inhibition of lymphatic metastasis.
Structural and magnetic properties of Yb-implanted GaN

Yin Chunhai,Liu Chao,Tao Dongyan,Zeng Yiping,

半导体学报 , 2013,
Abstract:
Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications
Ma Long,Huang Yinglong,Zhang Yang,Wang Liangchen,Yang Fuhua,Zeng Yiping,
Ma Long
,Huang Yinglong,Zhang Yang,Wang Liangchen,Yang Fuhu,Zeng Yiping

半导体学报 , 2006,
Abstract: A high performance AlAs/In0.53Ga0.47As/InAs resonant tunneling diode (RTD) on InP substrate is fabricated by inductively coupled plasma etching.This RTD has a peak-to-valley current ratio (PVCR) of 7.57 and a peak current density Jp=39.08kA/cm2 under forward bias at room temperature.Under reverse bias,the corresponding values are 7.93 and 34.56kA/cm2.A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire.The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.
Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD
Shen Wenjuan,Wang Jun,Duan Yao,Wang Qiyuan,Zeng Yiping,
Shen Wenjuan
,Wang Jun,Duan Yao,Wang Qiyuan,Zeng Yiping

半导体学报 , 2005,
Abstract: 采用金属有机化学气相沉积方法,在Si(100)衬底上生长出具有高度C轴择优取向的ZnO薄膜.通过X射线衍射、原子力显微镜和室温光致发光谱研究了厚度对ZnO薄膜的结构、表面和光学性能的影响.X射线衍射图显示ZnO薄膜只有单一的(0002)峰,具有高度择优取向.AFM和PL测试表明,在取样薄膜厚度范围内,薄膜的表面质量和发光性能没有随着薄膜厚度的增加而提高.这是因为薄膜在厚度增加的生长过程中,生长模型变化且晶粒增大.
Hierarchical Modeling by Recursive Unsupervised Spectral Clustering and Network Extended Importance Measures to Analyze the Reliability Characteristics of Complex Network Systems  [PDF]
Yiping Fang, Enrico Zio
American Journal of Operations Research (AJOR) , 2013, DOI: 10.4236/ajor.2013.31A010
Abstract:

The complexity of large-scale network systems made of a large number of nonlinearly interconnected components is a restrictive facet for their modeling and analysis. In this paper, we propose a framework of hierarchical modeling of a complex network system, based on a recursive unsupervised spectral clustering method. The hierarchical model serves the purpose of facilitating the management of complexity in the analysis of real-world critical infrastructures. We exemplify this by referring to the reliability analysis of the 380 kV Italian Power Transmission Network (IPTN). In this work of analysis, the classical component Importance Measures (IMs) of reliability theory have been extended to render them compatible and applicable to a complex distributed network system. By utilizing these extended IMs, the reliability properties of the IPTN system can be evaluated in the framework of the hierarchical system model, with the aim of providing risk managers with information on the risk/safety significance of system structures and components.

Effect of pyrophosphate on the light scatter in KDP crystal
Xun Sun,Xinguang Xu,Youjun Fu,Shenglai Wang,Hong Zeng,Yiping Li,Zhangshou Gao
Chinese Science Bulletin , 2001, DOI: 10.1007/BF03183268
Abstract: Pyrophosphate doped potassium dihydrogen phosphate (KDP) crystal was grown from aqueous solution by the temperature lowering method. Light scatter in KDP crystal was detected with the ultramicroscopic method. The light scatter in KDP crystal was aggravated when pyrophosphate was doped into the growth solution, which was distributed ununiformly in prism and pyramidal sectors of KDP crystal. Different effects of pyrophosphate on prism and pyramidal sectors of KDP crystal can explain this case. The transmission in this crystal was measured, showing that pyrophosphate affects the transmission evidently.
Effects of impurities on growth habit of KDP crystal
Sun Xun,Fu Youjun,Gao Zhangshou,Wang Shenglai,Zeng Hong,Li Yiping
Chinese Science Bulletin , 2001, DOI: 10.1007/BF02900697
Abstract: The effects of metaphosphate, boric acid and quaternary ammonium cations with different concentration on the growth habit of KDP crystal are reported. The results are analyzed and discussed, which show that the effects of different impurities on the growth habit of KDP are not the same. It is due to the different adsorption mechanism of the impurities.
Undoped semi-insulating indium phosphide (InP) and its applications
Hongwei Dong,Youwen Zhao,Jinghua Jiao,Yiping Zeng,Jimin Li,Lanying Lin
Chinese Science Bulletin , 2003, DOI: 10.1007/BF03183219
Abstract:
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