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Search Results: 1 - 10 of 27933 matches for " Weilian Ma "
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The Adjustment and Effects of Vocabulary Teaching Strategies in Flipped Classroom  [PDF]
Hongwei Zhang, Jie Li, Liping Jiao, Weilian Ma, Chen Guan
Creative Education (CE) , 2016, DOI: 10.4236/ce.2016.714199
Abstract: The importance of vocabulary teaching is self-evident. Yet, the present English vocabulary teaching model is still far more traditional than modern because of the inadequacy of education revolution. The flipped classroom teaching model brings a new horizon to the field of vocabulary teaching. This paper takes the freshmen in the English department of a college in northern part of China as the main body of research analyzes the results of the experimental vocabulary teaching and gets the conclusion that the flipped classroom teaching model promotes English vocabulary teaching outcomes.
HGIH-TEMPERATURE ANNEALING BEHAVIOUR OF NTD CZ Si IRRADIATED BY HIGH NEUTRON FLUENCE
大通量辐照的NTD CZ Si 高温退火行为

Zhang Weilian,
张维连

电子与信息学报 , 1988,
Abstract: High temperature (750-1900C) annealing behaviour of NTD CZ Si irradiated by high neutron fluence (1018 n/cm) is investigated. It is found that neutron irradiation induced donor (NIID) with high concentration can be produced within the temperature range, die highest concentration of the donors can arrive in value about 10" cm-2. Only if annealing temperature exceeds 1100C, the accurate aim rwistivity can be obtained. The annealing technology for the NTD CZ Si and the condition of appearance and annihilation for NIID are studied.
Optimization of medium composition for thermostable protease production by Bacillus sp. HS08 with a statistical method
H Guangrong, D Dehui, H Weilian, J Jiaxin
African Journal of Biotechnology , 2008,
Abstract: Optimization of the fermentation medium for maximization of thermostable neutral protease production by Bacillus sp. HS08 was carried out. After screening various elements, carbon and nitrogen sources, response surface methodology (RSM) was applied to optimize the medium constituents. A 24 fullfactorial central composite design (CCD) was chosen to explain the combined effects of the four medium constituents; corn starch, soybean meal, glucose and yeast extract. The optimized values obtained by the statistical analysis showed that corn starch at 19.8 g/l, soybean meal at 9.7 g/l, glucose at 3.6 g/l and yeast extract at 3.9 g/l gived maximum protease activity of 6804 U/ml.
Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT
Ji HaiTao,Zhang ShiLin,Guo WeiLian,Liang HuiLai,Mao LiuHong,
Qi Haitao
,Zhang Shilin,Guo Weilian,Liang Huilai,and Mao Luhong

半导体学报 , 2005,
Abstract: A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is larger than 120. By use of device simulation,the cause of NDR is that increasing collector voltage makes the ultrathin base reach through and the device transforms from a bipolar state to a bulk barrier state. In addition, the simulated cutoff frequency is about 60-80GHz.
Monolithically Fabricated OEICs Using RTD and MSM
Hu Yanlong,Liang Huilai,Li Yihuan,Zhang Shilin,Mao Luhong,Guo Weilian,
Hu Yanlong
,Liang Huilai,Li Yihuan,Zhang Shilin,Mao Luhong,Guo Weilian

半导体学报 , 2006,
Abstract: 报道了GaAs基共振隧穿二极管(RTD)与金属-半导体-金属光电探测器(MSM PD)单片集成的两种光电集成电路,并在室温条件下分别测试了RTD器件、MSM器件和集成电路的电学特性.测试表明:RTD器件的峰谷电流比为4;由于改进了在半绝缘GaAs衬底上制作MSM的方法,5V偏压下的电流由原来的2μA增加到了18μA,基本实现了两种电路的逻辑功能.
The Equitable Total Chromatic Number of Some Join graphs  [PDF]
Gang MA, Ming MA
Open Journal of Applied Sciences (OJAppS) , 2012, DOI: 10.4236/ojapps.2012.24B023
Abstract: A proper total-coloring of graph G is said to be?equitable if the number of elements (vertices and edges) in any?two color classes differ by at most one, which the required?minimum number of colors is called the equitable total chromatic?number. In this paper, we prove some theorems on equitable?total coloring and derive the equitable total chromatic numbers?of Pm V?Sn, Pm V?Fn and Pm V Wn.
AlGaInAs multi-quantum wells ring laser with optical coupling waveguides
XianJie Li,LiFang Qi,WeiLian Guo,JinLong Yu,YongLin Zhao,DaoMin Cai,ShunZheng Yin,LuHong Mao
Chinese Science Bulletin , 2009, DOI: 10.1007/s11434-009-0294-0
Abstract: Based on InAlGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode, a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization process. The laser is generated in a semiconductor resonator ring and is output by two coupled integrated bus waveguides. The ring diameter is 700 μm and the width of the waveguide is 3 μm. The output optical power-current (P-I) characteristic and the wavelength spectra of the ring laser are measured using a fiber coupled to the cleaved facet of the bus waveguide. The threshold current of the device is 120 mA and the wavelength is 1602 nm at an injected current of 160 mA. In addition, the operation mode for the laser in the resonator ring is roughly discussed based on the P-I characteristic plot.
A novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process
Yan Chen,LuHong Mao,WeiLian Guo,Xin Yu,ShiLin Zhang,Sheng Xie
Chinese Science Bulletin , 2012, DOI: 10.1007/s11434-011-4900-6
Abstract: A novel negative-resistance transistor (NRT) with a Lambda shaped I–V characteristic is demonstrated in the 0.5 μm standard CMOS process. To save on the number of component devices, this device does not use standard device models provided by CMOS processes, but changes a MOSFET and a BJT into a single device by fabricating them in the same n-well, with a p-type base layer as the MOSFET’s substrate. The NRT has a low valley current of 6.82 nA and a very high peak-to-valley current ratio of 3591. The peak current of the device is 24.49 μA which is low enough to reduce the power consumption of the deivce, and the average value of its negative resistance is about 32 kΩ. Unlike most negative-resistance devices which have been fabricated on compound semiconductor substrates in recent years, this novel NRT is based on a silicon substrate, compatible with mainstream CMOS technology. Our NRT dramatically reduces the number of devices, minimizing the area of the chip, has a low power consumption and thus a further reduction in cost.
The Application of Bzier Patch Fitting Method to the Measurement of Three Dimensional Surface by Shadow Moir
Bezier曲面拟合方法在影像云纹测量三维物体形状中的应用

Zhou Wanlin,Wu Yaxin,Shi Weilian,
周晓林
,吴亚新

实验力学 , 1997,
Abstract: In this paper, a method for surface is proposed measurement where an irregular surface is simulated by Bzier patches in the sense of piecewiseleast square. The software for processing contoure moir is developed, which can produce three dimentional coordimates of any point on a surface, draw its axonometric and developed figure,and analyze the geometric properties of the surface. So the entirely automatic measurement of three dimentional surfaces by shedow moir has come true.
ULTRASTRUCTURAL STUDY DURING PLASTID DEVELOPMENT OF STEVIA REBAUDIANA BERTANI
甜菊质体发育过程的超微结构研究

Hong Weilian,Chen Muchuan,Wang Deyao,
洪维廉
,陈睦传,汪德耀

植物科学学报 , 1985,
Abstract: 观察了甜菊(Steviarebaudiana Bertani)质,本发育过程的超微结构变化、黄化幼芽质体的原片层体,为小管组成的网状“晶格体”,“质体中心”逐渐弥散,形成放射状排列的片层结构。质体的被膜出现突起的芽体,可能是质体增殖的一种方式。至幼叶转绿后,“质体中心”弥散消失,类囊体基本形成,原片层体转化为片层结构。随着叶片的成长变绿,基粒片层和基质片层的明显分化,基粒垛叠层增多,光合膜系十分发达。在幼叶和正在伸展的叶片细胞内,可以观察到叶绿体的分裂成为哑铃形,这是叶绿体增殖的主要途径。
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