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Search Results: 1 - 10 of 4757 matches for " Md. Nadim "
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Photocatalytic Degradation of p-Nitrophenol (PNP) in Aqueous Suspension of TiO2  [PDF]
Shafiqul Islam, Sumon Kumar Bormon, Md. Nadim, Kamrul Hossain, Ahsan Habib, Tajmeri Selima Akhter Islam
American Journal of Analytical Chemistry (AJAC) , 2014, DOI: 10.4236/ajac.2014.58057
Abstract: The effects of initial concentrations of PNP, doses of TiO2, cations and anions have been investigated to find out the conditions for the maximum degradation of PNP in presence of 254 nm UV light. The rate of photocatalytic degradation of PNP was increased with increasing TiO2 dose until the dose concentration reached at a value 0.4 g/100 mL. Further increase of TiO2 decreased the degradation. The maximum degradation of PNP was found with the catalyst dose 0.4 g/100 mL at pH 3. The degradation of PNP was decreased with increasing of PNP concentration. About 90% degradation of PNP was observed when 1.0 × 10﹣4 M PNP was irradiated for 2 hours in 0.4 g/100 mL of TiO2 suspension. The effect of Cu(II) and Fe(II) ions on the degradation was also investigated. Addition of Cu(II) ions enhances the percent degradation but excess of Cu(II) ions decreases the degradation. Under the same experimental conditions, the presence of \"\" and \"\" is found to be detrimental to the photodegradation of PNP. Hydrogen ion concentration of reaction mixture was found to increase continuously during photodegradation suggesting mineralization of PNP.
Microsatellite markers for determining genetic identities and genetic diversity among jute cultivars
Jesmin Akter,Md. Shahidul Islam,Abu Ashfaqur Sajib,Nadim Ashraf
Australian Journal of Crop Science , 2008,
Abstract: DNA fingerprint was generated using jute specific SSR markers on 10 jute cultivars from two Corchorus species (C. olitorius and C. capsularis) and the genetic relatedness among the cultivars was estimated. A total of 106 alleles were identified using 23 primer pairs among the 10 cultivars with an average of 4.61 ± 1.92 alleles per locus, and a mean genetic diversity of 0.68±0.16. Four C. olitorius cultivars could be easily distinguished with 6 markers using 5 primer pairs and six C. capsularis cultivars with 7 markers using 6 primer pairs. The UPGMA analysis enabled the grouping of the cultivars into two major clusters, which matched with the known information on jute. This experiment provides proof that in spite of low levels of genetic polymorphisms among jute cultivars, SSR markers can reliably distinguish among them. This finding reinforces the utility of SSR primers for providing unique genetic identities or fingerprints of various jute cultivars.
Studying the Effect of Urban Furniture on Satisfaction of Domestic Tourists in Isfahan Bus Terminals  [PDF]
Zahra Nadim, Mehri Azani
Open Journal of Geology (OJG) , 2016, DOI: 10.4236/ojg.2016.69077
Abstract: Terminals and stations as one of the most important parts of transportation systems and also as the arteries of the countrys economy life undertake significant role in adjustment and regulation of the traffic pulse of cities and roads. Urban furniture is one of the components considered in urban designing and as a part of the whole city, it defines the urban identity and structure. In todays world, the importance of designing the urban equipment and furniture is to an extent that even active architects in the field of industrial designing are invited for designing and performing the urban furniture and equipment. Urban designing is a thing beyond making some flower box in squares and determining bus and taxi stations. Evidently, what gives identity to the city or according to the saying of Sansovini, what has tranquility for the citys residents and creates attraction for foreigner tourists, not only include the mass buildings and streets traffic, but also include landscape, parks and furniture of the city. Standard designing of bus terminals like other urban furniture influences on urban face and it can have significant role in satisfaction of domestic tourists and increase and propagation of using of terminals. In this research, it has been attempted that the effect of furniture in the terminals of Isfahan city on domestic tourists should be studied that for this purpose, descriptive-analytic method has been used and data have been collected through field and library studies and secondary sources by using of SWOT model.
Planning for Wellness Tourism Center in Isfahan Province, Iran  [PDF]
Zahra Nadim, Amir Gandomkar
Open Journal of Ecology (OJE) , 2016, DOI: 10.4236/oje.2016.610060
Abstract: In today’s life, because of industrial cities with long time of work, environmental pollutions and the aging of the population demanding to have leisure, recreation and outdoor recreations for every group of population, the necessity of construction a place for health outdoor recreation is obvious. Such a place would provide both entertaining in a happy family atmosphere and enjoying from fresh air, healthy food and nature cures like hydrotherapy, fish spa, herbs, acupuncture etc. for all the people from a kid to elderly guy and healthy to sick. This project was aimed to introduce and make a plan for constructing this site, known as wellness tourism center in Isfahan province, Iran. For reaching this purpose with taking advantage of original and second hand text, library resources, filed observations, specialist opinion on questionnaire, SPSS software and analysis and evaluation of statistical models with 2-square test, the best plan for this site has been suggested.
Mixed Convective Flow of Micropolar Fluids past an Inclined Porous Flat Plate  [PDF]
Nadim Sheikh, Maruf Hasan
Open Journal of Fluid Dynamics (OJFD) , 2017, DOI: 10.4236/ojfd.2017.74042
Mixed convective flow of a viscous incompressible electrically conducting micropolar fluid along a semi-infinite inclined permeable flat plate with viscous dissipation has been analyzed numerically. With appropriate transformations the boundary layer equations are transformed into a set of nonlinear ordinary differential equations. The local similarity solutions of the transformed dimensionless equations for the flow, microrotation and the heat transfer characteristics are evaluated using Nachtsheim-Swigert shooting iteration technique (guessing the missing value) together with sixth order Runge-Kutta-Butcher integration scheme. Numerical results are presented in the form of non-dimensional velocity, microrotation and temperature profiles within the boundary layer for different parameters entering into the analysis. The effects of pertinent parameters on the local skin friction coefficient (viscous drag), plate couple stress and rate of heat transfer (Nusselt number) are also displayed graphically.
A Poisson Solver Based on Iterations on a Sylvester System  [PDF]
Michael B. Franklin, Ali Nadim
Applied Mathematics (AM) , 2018, DOI: 10.4236/am.2018.96052
We present an iterative scheme for solving Poisson’s equation in 2D. Using finite differences, we discretize the equation into a Sylvester system, AU +UB = F, involving tridiagonal matrices A and B. The iterations occur on this Sylvester system directly after introducing a deflation-type parameter that enables optimized convergence. Analytical bounds are obtained on the spectral radii of the iteration matrices. Our method is comparable to Successive Over-Relaxation (SOR) and amenable to compact programming via vector/array operations. It can also be implemented within a multigrid framework with considerable improvement in performance as shown herein.
Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
Imtiaz Ahmed,Iftikhar Ahmad Niaz,Md. Hasibul Alam,Nadim Chowdhury,Zubair Al Azim,Quazi Deen Mohd Khosru
Physics , 2012, DOI: 10.1109/ICEDSA.2012.6507820
Abstract: We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer.
Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects
Zubair Al Azim,Nadim Chowdhury,Iftikhar Ahmad Niaz,Md. Hasibul Alam,Imtiaz Ahmed,Quazi D. M. Khosru
Physics , 2012, DOI: 10.1109/ICEDSA.2012.6507819
Abstract: Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson solver taking into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other short channel effects in this device have been demonstrated in recent literature, C-V & Ballistic I-V characterizations by using self-consistent method are yet to be reported. C-V characteristic of this device is investigated here with the variation of bottom gate voltage. The depletion to accumulation transition point (i.e. Threshold voltage) of the C-V curve should shift in the positive direction when the bottom gate is negatively biased and our simulation results validate this phenomenon. Ballistic performance of this device has also been studied with the variation of top gate voltage.
In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current
Md. Hasibul Alam,Iftikhar Ahmad Niaz,Imtiaz Ahmed,Zubair Al Azim,Nadim Chowdhury,Quazi Deen Mohd. Khosru
Physics , 2012, DOI: 10.1109/EIT.2012.6220725
Abstract: In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consistent method was applied by solving coupled Schr\"odinger-Poisson equation taking wave function penetration and strain effects into account. Experimental I-V and gate leakage characteristic for p-channel InxGa1-xSb MOSFETs are available in recent literature. However, a self- consistent simulation of C-V characterization and direct tunneling gate leakage current is yet to be done for both n- channel and p-channel InxGa1-xSb surface channel MOSFETs. We studied the variation of C-V characteristics and gate leakage current with some important process parameters like oxide thickness, channel composition, channel thickness and temperature for n-channel MOSFET in this work. Device performance should improve as compressive strain increases in channel. Our simulation results validate this phenomenon as ballistic current increases and gate leakage current decreases with the increase in compressive strain. We also compared the device performance by replacing InxGa1-xSb with InxGa1-xAs in channel of the structure. Simulation results show that performance is much better with this replacement.
A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET
Nadim Chowdhury,Zubair Al Azim,Imtiaz Ahmed,Iftikhar Ahmad Niaz,Md. Hasibul Alam,Quazi D. M. Khosru
Physics , 2012, DOI: 10.1109/EIT.2012.6220737
Abstract: In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D Poisson's equation with appropriate boundary conditions, incorporating Young's parabolic approximation. The proposed model illustrates excellent match with the experimental results for both n-channel and p-channel 180nm Flexible-FETs. Threshold voltage variation with several important device parameters (oxide and silicon channel thickness, doping concentration) is observed which yields qualitative matching with results obtained from SILVACO simulations.
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