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Search Results: 1 - 10 of 885 matches for " Keisuke Arimoto "
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Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices  [PDF]
Tetsuji Arai, Hiroki Nakaie, Kazuki Kamimura, Hiroyuki Nakamura, Satoshi Ariizumi, Satoki Ashizawa, Keisuke Arimoto, Junji Yamanaka, Tetsuya Sato, Kiyokazu Nakagawa, Toshiyuki Takamatsu
Journal of Materials Science and Chemical Engineering (MSCE) , 2016, DOI: 10.4236/msce.2016.41006
Abstract:

We developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.1 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 10 sccm. We confirmed that the temperatures of transition-metal films increased to above 800C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of nickel films deposited on silicon wafers and formed nickel silicide electrodes. We found that this heat phenomenon automatically stopped after the nickel slicidation reaction finished. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability of silicon ultralarge-scale integration devices.

Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré  [PDF]
Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, Kazuo Ishizuka
Journal of Materials Science and Chemical Engineering (MSCE) , 2018, DOI: 10.4236/msce.2018.67002
Abstract:
A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.
Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers  [PDF]
Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu
Journal of Materials Science and Chemical Engineering (MSCE) , 2017, DOI: 10.4236/msce.2017.51006
Abstract:
We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.
STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon  [PDF]
Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa
Journal of Materials Science and Chemical Engineering (MSCE) , 2017, DOI: 10.4236/msce.2017.51014
Abstract:
We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.
Formation of Poly-Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films  [PDF]
Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kazuki Kamimura, Toshiyuki Takamatsu
Journal of Materials Science and Chemical Engineering (MSCE) , 2018, DOI: 10.4236/msce.2018.61003
Abstract:
We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. We confirmed that the temperatures of tungsten films increased to above 1000?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of tungsten films deposited on amorphous silicon films on glass substrates and formed polycrystalline silicon films. To utilize this method, we can perform the crystalline process only on device regions. TFTs were fabricated on the polycrystalline silicon films and the electron mobilities of 60 cm2/Vs were obtained.
TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing  [PDF]
Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
Journal of Materials Science and Chemical Engineering (MSCE) , 2017, DOI: 10.4236/msce.2017.51003
Abstract:
Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investigation of the change in microstructure of ion-implanted Si-C solid solution caused by rapid thermal annealing, because it is very important to realize a field-effect transistor made of this new material. The microstructures of arsenic-ion-, boron-ion-, and silicon-ion-implanted Si0.99C0.01 specimens upon thermal annealing are observed using transmission electron microscopy, and it is revealed that the rate of solid-state crystallization of ion-implanted Si-C is slower than that of the ion-implanted Si.
Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface  [PDF]
Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Naoto Utsuyama, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa
Journal of Materials Science and Chemical Engineering (MSCE) , 2018, DOI: 10.4236/msce.2018.61004
Abstract:
Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also observe microstructure of the identical position using cross-sectional transmission electron microscopy. These results reveal that crossing of stress-induced twins causes remarkable surface roughness. We propose using vicinal substrate to avoid this phenomenon and our successive experimental results are shown in this paper.
Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation  [PDF]
Tetsuji Arai, Kazuki Kamimura, Chiaya Yamamoto, Mai Shirakura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu, Masaaki Ogino, Masaaki Tachioka, Haruo Nakazawa
Journal of Materials Science and Chemical Engineering (MSCE) , 2017, DOI: 10.4236/msce.2017.51005
Abstract:
We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.
A Simple Proof of the Classification of Normal Toeplitz Matrices
Akio Arimoto
Mathematics , 2002,
Abstract: We give an easy proof to show that every complex normal Toeplitz matrix is classified as either of type I or of type II. Instead of difference equations on elements in the matrix used in past studies, polynomial equations with coefficients of elements are used. In a similar fashion, we show that a real normal Toeplitz matrix must be one of four types: symmetric, skew-symmetric, circulant, or skew-circulant. Here we use trigonometric polynomials in the complex case and algebraic polynomials in the real case.
Implementation and Evaluation of Transport Layer Protocol Executing Error Correction (ECP)  [PDF]
Tomofumi Matsuzawa, Keisuke Shimazu
Communications and Network (CN) , 2014, DOI: 10.4236/cn.2014.63019
Abstract:

Technologies for retransmission control and error correction are available for communications over the Internet to improve reliability of data. For communications that require the data reliability be ensured, TCP, which performs retransmission control, is often employed. However, for environments and services where response confirmation and retransmission are difficult, error correction technologies are employed. Error correction is generally implemented on UDP, but the existing framework implemented on UDP frequently does not consider the maximum frame size of the data link layer and relegates data division to the IP module. The IP module divides data according to the maximum size for the data link, and the receiving IP module reconstructs the divided data. For a data link layer typified by the current Ethernet with an error detection function, the frame is often destroyed upon error detection. At the IP module, the specification allows destruction of the entire dataset whenever divided data necessary for reconstruction is incomplete. Consequently, an error in a single bit results in a total loss of data handed to the IP module, and thus error correction performance declines with the increase in data size handed to the IP module. The present study considers the MTU of the data link layer and proposes error correction protocol (ECP) over IP, which decreases the transfer data volume flowing to the data link layer by dividing data into blocks of appropriate size based on designated error correction code and its parameters (thus improving error correction performance) and assesses the performance of ECP. Experimental results demonstrate that performance is comparable or better than existing error correction frameworks. Results also show that when a specification not ensuring the reliability of the data link layer was employed, error correction was superior to existing frameworks on UDP.

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