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Search Results: 1 - 10 of 2060 matches for " Epitaxial Films "
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Influence of Oxygen to Argon Ratio on the Structural and Morphological Properties of Nb-Doped SrTiO3 Epitaxial Films Grown by Reactive Ion Beam Sputter Deposition  [PDF]
Gasidit Panomsuwan, Nagahiro Saito
Crystal Structure Theory and Applications (CSTA) , 2013, DOI: 10.4236/csta.2013.21005
Abstract: Nb-doped SrTiO3 (STNO) films were grown on (001)-oriented LaAlO3 substrates by a reactive ion beam sputter deposition at various mixing ratios (OMRs) with a substrate temperature of 800oC. The STNO films exhibited good crystallinity with an epitaxial orientation as characterized by high-resolution X-ray diffraction, grazing-incidence X-ray diffraction, and in-plane pole figure analysis. A decrease of out-of-plane and in-plane lattice constants was observed with an increase of OMR. The surface morphology of the STNO films showed a very dense fine-grain structure. The root-mean-square roughness was found to be increased as the OMR increased. Moreover, the elemental compositions of the STNO films were examined by X-ray photoelectron spectroscopy.
Epitaxial growth of ultrathin ZrO2(111) films on Pt(111)
Yan Gao,Liang Zhang,YongHe Pan,GuoDong Wang,Yang Xu,WenHua Zhang,JunFa Zhu
Chinese Science Bulletin , 2011, DOI: 10.1007/s11434-010-4309-7
Abstract: Ordered epitaxial ZrO2 films were grown on Pt(111) and characterized by low energy electron diffraction (LEED), synchrotron radiation photoemission spectroscopy (SRPES) and X-ray photoelectron spectroscopy (XPS). The films were prepared by vapor deposition of zirconium in an O2 atmosphere followed by annealing under ultra high vacuum. At low coverages, the films grew as discontinuous two-dimentional islands with ordered structures. The size and structure of these islands were dependent on the coverage of ZrO2 films. At coverage <0.5 monolayer (ML), $ \left( {\sqrt {19} \times \sqrt {19} } \right) $ R23.4° and (5×5) structures coexisted on the surface. As the coverage increased, the $ \left( {\sqrt {19} \times \sqrt {19} } \right) $ R23.4° structure developed with increasing degree of long-range order, while the (5×5) structure gradually faded. When the coverage reached >6 ML, a continuous ZrO2(111) film was formed with a (1×1) surface LEED pattern coexisting with a (2×2) pattern. These ordered thin ZrO2 films provide good model surfaces of bulk ZrO2 and can be used for further fundamental studies of the surface chemistry of ZrO2 using modern surface science techniques.
Phase transformation of AlN in AlN/VN nanomultilayers and its effect on the mechanical properties of films
AlN在AlN/VN纳米多层膜中的相转变及其对薄膜力学性能的影响

Lao Ji-Jun,Hu Xiao-Ping,Yu Xiao-Jiang,Li Ge-Yang,Gu Ming-Yuan,
劳技军
,胡晓萍,虞晓江,李戈扬,顾明元

物理学报 , 2003,
Abstract: 采用反应磁控溅射制备了AlN/VN纳米多层膜.研究了多层膜调制周期对AlN生长结构的影响以 及纳米多层膜的力学性能.结果表明:小周期多层膜中的AlN以亚稳的立方相(c-AlN)存在并 与VN形成共格外延生长的超晶格.薄膜产生硬度和弹性模量升高的超硬效应.大调制周期下, AlN从立方结构转变为稳定的六方相(h-AlN),并使多层膜形成纳米晶的“砖墙”型结构. 讨论认为VN的模板作用有利于c-AlN的生长,但不能显著提高其临界厚度.
Epitaxial Layer-by-Layer Growth of BST Series Ferroelectric Thin Films at Low Temperature
BST类铁电薄膜低温外延层状生长研究

LI Jin-Long,LI Yan-Rong,ZHANG Ying,DENG Xin-Wu,LIU Xing-Zhao,
李金隆
,李言荣,张鹰,邓新武,刘兴钊

无机材料学报 , 2004,
Abstract: 利用激光分子柬外延技术(LMBE)在SrTiO3(100)单晶基片上外延生长SrTiO3(STO)、BaTiO3(BTO)、Ba0.6Sr0.4TiO3(BST)铁电薄膜.通过反射高能电子衍射(RHEED)实时监测薄膜生长,并结合原子力显微镜(AFM)分析薄膜的生长模式,根据RHEED衍射强度振荡曲线及衍射图样的变化确定动态和静态控制最低晶化温度,发现STO、BTO、BST三种铁电薄膜可以分别在280、330、340℃的低温下实现外延层状生长。
Magnetic and Transport Properties of Half-Metallic Ferromagnetic Compounds as the La0.7Sr0.3MnO3 Epitaxial Manganite Oxide Thin Films
M.A. Kouacou,A.A. Koua,D.K. Konan,K. Konan
Journal of Applied Sciences , 2008,
Abstract: The aim of this study is to investigate magnetic properties of an example of half-metallic and ferromagnetic compounds, namely, the La0.7Sr0.3MnO3 (LSMO) epitaxial manganite oxide thin films using tensile SrTiO3 (STO) and compressive LaAlO3 (LAO) substrates. From the magnetic measurements, it can be shown a large magnetic anisotropy in these compounds. The plane of the film is the easy magnetization direction for LSMO deposited onto STO substrate. Also, it seems that the magnetic properties are quite influenced by the strain effects in the films. Furthermore, electrical resistivity and magnetoresistance measurements were performed. The residual resistivity is higher than the massive single crystal sample value due certainly to the crystal defects. The half-metallic character of the LSMO films is not modified when the temperature increases. The magnetoresistance is only strong close to the Curie temperature and substantial in high magnetic field. And these are typical of the colossal magnetoresistance (CMR).
Probing on Growth and Characterizations of SnFe2O4 Epitaxial Thin Films on MgAl2O4 Substrate
Ram K. Gupta,J. Candler,Bipin K. Gupta,Pawan K. Kahol
Frontiers in Materials , 2014, DOI: 10.3389/fmats.2014.00010
Abstract: Epitaxial tin ferrite (SnFe2O4) thin films were grown using KrF excimer (248 nm) pulsed laser deposition technique under different growth conditions. Highly epitaxial thin films were obtained at growth temperature of 650°C. The quality and epitaxial nature of the films were examined by X-ray diffraction technique. Furthermore, the phi-scans of the film and substrate exhibit fourfold symmetry, which indicates a cube-on-cube epitaxial growth of the film on MgAl2O4 substrate. Moreover, the magnetic force microscopy measurement shows domains with cluster-like structure, which is associated with ferromagnetic phase at room temperature. The coercive field and remnant magnetization of the films decrease with increase in temperature. These high quality ingenious magnetic films could be potentially used in data storage devices.
Abnormal Raman spectra of PbTe crystalline thin films grown by molecular beam epitaxy
分子束外延PbTe单晶薄膜的反常拉曼光谱研究

Cao Chun-Fang,Wu Hui-Zhen,Si Jian-Xiao,Xu Tian-Ning,Chen Jing,Shen Wen-Zhong,
曹春芳
,吴惠桢,斯剑霄,徐天宁,陈静,沈文忠

物理学报 , 2006,
Abstract: 采用分子束外延(MBE)方法在BaF2(111)衬底上生长了高质量的PbTe单晶薄膜, 拉曼光谱测量观察到了表面氧化物的振动模、布里渊区中心(q≈0)纵光学(LO)声子振动模以 及声子-等离子激元耦合模振动.随着显微拉曼光谱仪激光光斑聚焦深度的改变,各拉曼散射 峰的峰位、积分强度、半高宽等都表现出不同的变化趋势. 随着激光光斑聚焦位置从样品表 面上方3μm处变化到表面下方3μm处,PbTe外延薄膜的LO声子频率从119cm-1移 动到124cm-1
Effects of Surface Treatment for Sapphire Substrate on GaN Films
蓝宝石表面处理对氮化镓薄膜的影响

PENG Dong-sheng,FENG Yu-chun,Wang Wen-xin,LIU Xiao-feng,SHI Wei,NIU Han-ben,
彭冬生
,冯玉春,王文欣,刘晓峰,施炜,牛憨笨

光子学报 , 2007,
Abstract: Etch pits on sapphire substrate surface are formed after surface treating.GaN films have been grown on sapphire substrate which is treated by chemical method with different etch time by LP-MOCVD.The structure and characters of the GaN films are analyzed by high-resolution double crystal X-ray diffraction (DCXRD),three-dimension visible optics microscope(OM),scanning electron microscope (SEM) and atomic force microscope(AFM).These results indicate that the quality of GaN films grown on sapphire substrate that is chemically etched for 50 minutes is the best.High-resolution double crystal X-ray diffraction presents the GaN films grown on sapphire substrate after surface treatment for 50 minutes (0002) plane and (10-12) plane full-width at half-maximum as low as 202.68arcsec and 300.24 acrsec,and the root mean surface (RMS) roughness is assessed and find to be 0.184 nm.
EPITAXIALLY GROWN Ba1-xSrxTiO3 THIN FILMS BY SOL-GEL TECHNIQUES AND ITS STRUCTURE AND PROPERTIES
溶胶-凝胶法制备外延Ba1-xSrxTiO3薄膜及其结构与性能研究

ZHANG Tian,Jin,WANG Wei,YANG Xiang,Rong,
章天金
,王玮,杨向荣

红外与毫米波学报 , 2002,
Abstract: 应用溶胶-凝胶技术在Pt/MgO(100)衬底上成功地制备了Ba0.65Sr0.35TiO3外延薄膜.XRD和SEM分析结果表明该薄膜在O2气氛中650℃热处理1h后,其(001)面是沿着Pt(100)和MgO(100)面外延取向生长的;薄膜表面均匀致密,厚度为260nm,平均晶粒大小为48.5nm.当测试频率为10kHz时,BST薄膜的介电常数和损耗因子分别为480和0.02.介电常数-温度关系测试结果表明sol-gel工艺制备的Ba0.65Sr0.35TiO3薄膜其居里温度在35℃左右,且在该温度下Ba0.65Sr0.35TiO3薄膜存在扩散铁电相变特征.当外加偏置电压为3V时,BST薄膜的漏电流密度为1.5×10-7A/cm2.该薄膜可作为制备新型非制冷红外焦平面阵列和先进非制冷红外热像仪的优选材料.
Observation of Electron-Phonon Couplings and Fano Re-sonances in Epitaxial Bilayer Graphene  [PDF]
J. M. Baranowski, M. Mozdzonek, P. Dabrowski, K. Grodecki, P. Osewski, W. Kozlowski, M. Kopciuszynski, W. Strupinski
Graphene (Graphene) , 2013, DOI: 10.4236/graphene.2013.24017
Abstract:

The results of optical investigation of hydrogenated epitaxial bilayer graphene are presented. A softening and an increase of the intensity of the in-plane anti-symmetric phonon mode are observed at 0.2eV. It is suggested that they both originate from coupling of the optically active phonon mode to virtual electronic transitions, which is related to the band structure of bilayer graphene and leads to the “charged phonon” effect. In addition, it is noted that optically active phonon peaks have pronounced Fano shapelines. It is argued that the Fano shapeline is attributed to the interaction of the phonon mode with a continuum of electronic transitions in valence bands of hydrogenated bilayer graphene.

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