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A Human T Lymphotropic Virus Type 1 Carrier Coinfected with Mycobacterium intracellulare and Pneumocystis jirovecii with a Characteristic Compositional Change of Bone Marrow Cells  [PDF]
Sayaka Uda, Shinsuke Shiotsu, Ayaka Omura, Ryosuke Hamashima, Akihiro Yoshimura, Naoko Kurisu, Tomoya Sagawa, Koichi Hasegawa, Tatsuya Yuba, Chieko Takumi, Seiko Ono, Noriya Hiraoka, Noriya Hiraoka
Open Journal of Respiratory Diseases (OJRD) , 2017, DOI: 10.4236/ojrd.2017.73011
Abstract: Human T lymphotropic virus type 1 (HTLV-1) is endemic in the southern part of Japan. Infection of the virus can cause adult T cell leukemia/lymphoma (ATL), while most infected individuals remain in a carrier state for a long period of time. Although rare cases of carriers, like ATL patients, who developed opportunistic infections, have been reported, hematological changes of carriers who are prone to opportunistic infections have not been well defined. Here, we present a case of an HTLV-1 carrier who developed Mycobacterium intracellulare infection and Pneumocystis jirovecii pneumonia (PcP) simultaneously. Flow cytometric analysis of bone marrow cells revealed an aberrant compositional change similar to that in ATL patients. This suggests the presence of a pre-ATL state prior to the development of ATL, which is notable in terms of underlying cellular immunodeficiency.
Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips  [PDF]
Yasuhisa Omura, Yukio Iida
Circuits and Systems (CS) , 2013, DOI: 10.4236/cs.2013.42024

The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.

Bromination of Pd Compounds during Thermal Decomposition of Tetrabromobisphenol A  [PDF]
Shunsuke Kuzuhara, Ayaka Sano
Engineering (ENG) , 2018, DOI: 10.4236/eng.2018.104013
Abstract: We conducted thermal tests using the reagent tetrabromobisphenol A (TBBPA) and various Pd compounds to study the chemical forms of Pd obtained during the pyrolytic and oxidative decomposition of TBBPA. Thermal testing was conducted in an electric furnace at temperatures of 280°C - 800°C in an Ar or Ar-O2 (5%) atmosphere for a heating period of 40 min. Scanning electron microscopy-energy dispersive X-ray spectroscopy results revealed that Pd bromide was formed in the mixture of TBBPA and PdO after heating to 450°C in the Ar atmosphere. In addition, thermogravimetry-differential thermal analysis showed that as the heating temperature was increased from 350°C to 730°C, weight loss occurred at a nearly constant rate, indicating that Pd bromide decomposed in this temperature range.
Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
Yasuhisa Omura
Active and Passive Electronic Components , 2011, DOI: 10.1155/2011/850481
Abstract: We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700?K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for (427?C). This confirms that HTOT SOI MOSFET is a promising device for future high-temperature applications. 1. Introduction The long-term goal in integrated circuits is to lower the dimensionality of MOS transistors in order to increase the function-density and also the speed of extremely large-scale silicon-integrated circuits [1]. The necessity of the silicon-on-insulator (SOI) MOSFET is clear, given its merits of high-speed operation and low-power operation with fewer short-channel effects [2]. However, its off-leakage current is significant, even in thin SOI MOSFETs in the sub-100-nm regime [3]. The author recently proposed the tunneling barrier junction (TBJ) SOI MOSFET that offers suppressed off-leakage current [4, 5]. It has been shown that the TBJ SOI MOSFET suffers from low drive current if used at low temperatures as intended [6]. It has been demonstrated, however, that the thin SOI MOSFET is a promising device for applications that work at 300?C [1]. Its off-leakage current is still a serious problem and prevents its use at higher temperatures. When analyzing high-temperature-operation, it is anticipated that we do not need full quantum-mechanical simulations even for a thin SOI MOSFET because the influence of various carrier scattering events on the transport in the channel region is crucial; so-called thermalization is dominant in the Si material. This paper applies the semiclassical transport model to assess the feasibility of SOI MOSFET in achieving high-temperature operation. This paper introduces the High-Temperature-Operation Tolerant (HTOT) SOI MOSFET and shows preliminary simulation results of its characteristics. A commercial 2D device simulator [7] is used to simulate the drain current characteristics throughout the study. 2. Device Structure and Simulations A schematic of HTOT SOI MOSFET is shown in Figure 1(a). The device has an n+-Si gate, a thin n-type body, two thin p-type bodies, and two local-thin Si regions; it is assumed that the top SOI layer surface has (001) orientation. The gate oxide layer is
Metastable supersymmetry breaking vacua from conformal dynamics
Omura, Yuji
High Energy Physics - Phenomenology , 2008, DOI: 10.1063/1.3051996
Abstract: We study the scenario that conformal dynamics leads to metastable supersymmetry breaking vacua. At a high energy scale, the superpotential is not R-symmetric, and has a supersymmetric minimum. However, conformal dynamics suppresses several operators along renormalization group flow toward the infrared fixed point. Then we can find an approximately R-symmetric superpotential, which has a metastable supersymmetry breaking vacuum, and the supersymmetric vacuum moves far away from the metastable supersymmetry breaking vacuum. We show a 4D simple model. Furthermore, we can construct 5D models with the same behavior, because of the AdS/CFT dual.
Drilling Investigations on the Mechanics and Structure of Faults
Kentaro Omura
Scientific Drilling , 2007, DOI: 10.2204/iodp.sd.s01.22.2007
Time evolution of autocorrelation function in dynamical replica theory
Ayaka Sakata
Physics , 2012, DOI: 10.1088/1751-8113/46/16/165001
Abstract: Asynchronous dynamics given by the master equation in the Sherrington--Kirkpatrick (SK) spin-glass model is studied based on dynamical replica theory (DRT) with an extension to take into account the autocorrelation function. The dynamical behaviour of the system is approximately described by dynamical equations of the macroscopic quantities: magnetization, energy contributed by randomness, and the autocorrelation function. The dynamical equations under the replica symmetry assumption are derived by introducing the subshell equipartitioning assumption and exploiting the replica method. The obtained dynamical equations are compared with Monte Carlo (MC) simulations, and it is demonstrated that the proposed formula describes well the time evolution of the autocorrelation function in some parameter regions. The study offers a reasonable description of the autocorrelation function in the SK spin-glass system.
The complete splitting number of a lassoed link
Ayaka Shimizu
Mathematics , 2010,
Abstract: In this paper, we define a lassoing on a link, a local addition of a trivial knot to a link. Let K be an s-component link with the Conway polynomial non-zero. Let L be a link which is obtained from K by r-iterated lassoings. The complete splitting number split(L) is greater than or equal to r+s-1, and less than or equal to r+split(K). In particular, we obtain from a knot by r-iterated component-lassoings an algebraically completely splittable link L with split(L)=r. Moreover, we construct a link L whose unlinking number is greater than split(L).
Region crossing change is an unknotting operation
Ayaka Shimizu
Mathematics , 2010,
Abstract: Region crossing change is a local transformation on a knot or link diagram. We show that a region crossing change on a knot diagram is an unknotting operation, and we define the region unknotting numbers for a knot diagram and a knot.
The warping degree of a knot diagram
Ayaka Shimizu
Mathematics , 2008,
Abstract: For an oriented knot diagram D, the warping degree d(D) is the smallest number of crossing changes which are needed to obtain the monotone diagram from D in the usual way. We show that d(D) + d(-D) + 1 is less than or equal to the crossing number of D. Moreover the equality holds if and only if D is an alternating diagram.
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